Search results for "Circuits"
showing 10 items of 358 documents
Fabrication and Characterization of Double- and Single-Clamped CuO Nanowire Based Nanoelectromechanical Switches
2021
Electrostatically actuated nanoelectromechanical (NEM) switches hold promise for operation with sharply defined ON/OFF states, high ON/OFF current ratio, low OFF state power consumption, and a compact design. The present challenge for the development of nanoelectromechanical system (NEMS) technology is fabrication of single nanowire based NEM switches. In this work, we demonstrate the first application of CuO nanowires as NEM switch active elements. We develop bottom-up and top-down approaches for NEM switch fabrication, such as CuO nanowire synthesis, lithography, etching, dielectrophoretic alignment of nanowires on electrodes, and nanomanipulations for building devices that are suitable f…
Advanced time-stamped total data acquisition control front-end for MeV ion beam microscopy and proton beam writing
2013
Many ion-matter interactions exhibit [email protected] time dependences such as, fluorophore emission quenching and ion beam induced charge (IBIC). Conventional event-mode MeV ion microbeam data acquisition systems discard the time information. Here we describe a fast time-stamping data acquisition front-end based on the concurrent processing capabilities of a Field Programmable Gate Array (FPGA). The system is intended for MeV ion microscopy and MeV ion beam lithography. The speed of the system (>240,000 events s^-^1 for four analogue to digital converters (ADC)) is limited by the ADC throughput and data handling speed of the host computer.
Nanorings and rods interconnected by self-assembly mimicking an artificial network of neurons
2013
[EN] Molecular electronics based on structures ordered as neural networks emerges as the next evolutionary milestone in the construction of nanodevices with unprecedented applications. However, the straightforward formation of geometrically defined and interconnected nanostructures is crucial for the production of electronic circuitry nanoequivalents. Here we report on the molecularly fine-tuned self-assembly of tetrakis-Schiff base compounds into nanosized rings interconnected by unusually large nanorods providing a set of connections that mimic a biological network of neurons. The networks are produced through self-assembly resulting from the molecular conformation and noncovalent intermo…
Optimizing Energy Transduction of Fluctuating Signals with Nanofluidic Diodes and Load Capacitors
2018
[EN] The design and experimental implementation of hybrid circuits is considered allowing charge transfer and energy conversion between nanofluidic diodes in aqueous ionic solutions and conventional electronic elements such as capacitors. The fundamental concepts involved are reviewed for the case of fluctuating zero-average external potentials acting on single pore and multipore membranes. This problem is relevant to electrochemical energy conversion and storage, the stimulus-response characteristics of nanosensors and actuators, and the estimation of the accumulative effects caused by external signals on biological ion channels. Half-wave and full-wave voltage doublers and quadruplers can…
Electrochemical impedance spectroscopy for studying passive layers on steel rebars immersed in alkaline solutions simulating concrete pores
2007
Present paper deals with the use of the electrochemical impedance spectroscopy to identify different processes in the passive layer growth over steel rebar surface immersed in an alkaline media simulating the concrete pore solution. Two cases have been considered: a passive layer spontaneously grown in a high alkaline media and a passive layer assisted by the application of an anodic potential in the same media. The application of electric equivalent circuits allows distinguishing between the different mechanisms occurring in this passive layer when grows in different conditions. An electric equivalent circuit with two RC loops connected in parallel is often used for fitting the EIS diagram…
Tb/s switching fabrics for optical interconnects using heterointegration of plasmonics and silicon photonics: The FP7 PLATON approach
2010
We present recent work that is carried out within the FP7 project PLATON on novel Tb/s switch fabric architectures and technologies for optical interconnect applications, employing heterointegration of plasmonics, silicon photonics and electronics.
Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter
2021
In recent years, new efficient power devices have been implemented. Silicon Carbide has replaced silicon as regards the production and the utilization of many devices, such as MOSFETs, diodes, IGBTs and many others. SiC devices are characterized by a low reverse recovery charge, high carrier saturation velocity, by which it is possible to work at high frequency, and high breakdown voltage. Thanks to the great thermal conductivity and the wide bandgap, these devices can operate at high temperature and reach high voltages and currents. What is important to stress is the fact that power losses in SiC devices are lower than the silicon ones. These are the reasons why these devices are utilized …
Single electron transistor fabricated on heavily doped silicon-on-insulator substrate
2001
Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.
ELECTRON-PHONON COUPLING IN HEAVILY DOPED SILICON
2001
The coupling constant in electron-phonon interaction is a very important issue in nanoscale applications. We have measured this constant in heavily doped silicon. Electron-phonon interaction is proportional to T6 and the coupling constant is found to be 1.5 × 108 W/K5m³, which is about one tenth of the value in normal metals.
Chip-to-chip plasmonic interconnects and the activities of EU project NAVOLCHI
2012
In this paper, the chip-to-chip interconnection architecture adopted by the EU-project NAVOLCHI are discussed. The plasmonic physical layer consisting of a plasmonic nanoscale laser, a modulator, an amplifier and a detector is introduced. Current statuses of the plasmonic devices are reviewed.