Search results for "Conductor"

showing 10 items of 1270 documents

Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films

2008

Solid phase epitaxial regrowth (SPER) of p -doped preamorphized Si was studied by time resolved reflectivity. Strain and dopant concentration were opportunely varied by implanting neutral (Ge) and isovalent (B, Ga) impurities in order to disentangle the two different effects on SPER. Larger SPER rate variations occurred in strained doped Si with respect to undoped samples. The generalized Fermi level shifting model was implemented to include the role of the strain and to fit the experimental data over a large range of temperature for p - and n -type doping. We introduced a charged defect, whose energy level is independent of the dopant species. © 2008 American Institute of Physics.

SiliconMaterials scienceSTRESSPhysics and Astronomy (miscellaneous)SiliconAnalytical chemistrychemistry.chemical_elementGalliumEpitaxySettore FIS/03 - Fisica Della MateriaLAYERSsymbols.namesakeImpurityDOPANTPhase (matter)Semiconductor dopingKINETICSSemiconducting silicon compoundDopantAmorphous filmGermaniumSettore ING-INF/03 - TelecomunicazioniFermi levelDopingAmorphous siliconPhosphoruEpitaxial filmAmorphous solidchemistrysymbolsSOLID-PHASE EPITAXY
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High accuracy Raman measurements using the Stokes and anti-Stokes lines

1997

We show that by measuring the separation between the Stokes and anti-Stokes peaks excited by two different laser lines we obtain a very precise determination of absolute phonon energies. The method is useful for measuring small changes of these energies with strain, temperature, laser power, etc. It doubles the changes and avoids the necessity of using the reference lines in the Raman spectra. The method can be applied for the determination of phonon deformation potentials, for the characterization of strained heteroepitaxial layers, and for micro-Raman analysis of strain in silicon integrated circuits. We give examples of phonon shifts in Si, Ge, GaAs, InAs, and GaP as a function of applie…

SiliconMaterials scienceSiliconRaman SpectraPhononAnalytical chemistryGeneral Physics and Astronomychemistry.chemical_elementIndium CompoundsMolecular physicsGallium arsenidelaw.inventionGallium Arsenidesymbols.namesakechemistry.chemical_compoundThermo-Optical EffectsCondensed Matter::Materials Sciencelaw:FÍSICA [UNESCO]Laser power scalingSemiconductor Epitaxial LayersLaser Beam EffectsElemental SemiconductorsSilicon ; Germanium ; Elemental Semiconductors ; Gallium Arsenide ; Indium Compounds ; Gallium Compounds ; III-V Semiconductors ; Raman Spectra ; Phonon Spectra ; Semiconductor Epitaxial Layers ; Integrated Circuit Technology ; Deformation ; Laser Beam Effects ; Thermo-Optical EffectsGermaniumUNESCO::FÍSICAIII-V SemiconductorsPhonon SpectraLaserCondensed Matter::Mesoscopic Systems and Quantum Hall EffectIntegrated Circuit TechnologyDeformationchemistryExcited stateGallium CompoundssymbolsDeformation (engineering)Raman spectroscopy
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Electrical Resistivity Anisotropy of Silicon-Doped n-Indium Selenide

1993

Siliconbusiness.industryChemistrySemiconductor materialsDopingInorganic chemistrychemistry.chemical_elementCondensed Matter PhysicsElectronic Optical and Magnetic Materialschemistry.chemical_compoundElectrical resistivity and conductivitySelenideOptoelectronicsbusinessAnisotropyIndiumPhysica Status Solidi (a)
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Digital Hydraulic Technology for Linear Actuation:A State of the Art Review

2020

This paper analyses the current state of the art in linear actuation with digital hydraulics. Based on the differences in their aims the paper partitions the area into four actuation concepts – parallel valve solutions, single switching valve solutions, multi-chamber cylinders, and multi-pressure cylinders. The concepts are evaluated based on accuracy and smoothness of motion, switching load, reliability, efficiency and the number of components required.

SmoothnessHydraulicsComputer scienceMechanical EngineeringDigital hydraulicsGeneral Physics and AstronomyMechanical engineeringState of the art reviewState of the artGeneralLiterature_MISCELLANEOUSlaw.inventionComputer Science::OtherReliability (semiconductor)lawMulti-chamber cylindersState (computer science)Switching Valves
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Los Centros de Reconocimiento de Conductores veinte años después

2008

Si bien existe una tradicion espanola en la aplicacion de los conocimientos psicologicos a la prevencion de accidentes de circulacion, que arranca desde la decada de 1920, no se convirtio en un fenomeno de masas hasta mediados de los anos 80 cuando, al extenderse desde los conductores profesionales a todos los conductores, llego a un numero creciente de espanolas y espanoles. Esta accion preventiva, que fue el primer rol profesional de intervencion psicologica legalmente regulado en Espana, definido incluso antes de la existencia formal de una autentica practica academica en Psicologia, es hoy una destacada fuente de empleo para los titulados en Psicologia y goza de plena actualidad, como d…

Social PsychologyDevelopmental and Educational PsychologySelección de conductoresRepresentación socialPsicotecniaApplied PsychologyPerfil profesionalPrevención accidentes tráfico
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TCO/Ag/TCO transparent electrodes for solar cells application

2014

Among transparent electrodes, transparent conductive oxides (TCO)/metal/TCO structures can achieve optical and electrical performances comparable to, or better than, single TCO layers and very thin metallic films. In this work, we report on thin multilayers based on aluminum zinc oxide (AZO), indium tin oxide (ITO) and Ag deposited by RF magnetron sputtering on soda lime glass at room temperature. The TCO/Ag/TCO structures with thicknesses of about 50/10/50 nm were deposited with all combinations of AZO and ITO as top and bottom layers. While the electrical conductivity is dominated by the Ag intralayer irrespective of the TCO nature, the optical transmissions show a dependence on the natur…

Soda-lime glassMaterials scienceTransparent electrode Electrodeschemistry.chemical_elementPhotovoltaic applicationrf-Magnetron sputteringMetalTransparent conductive oxideElectrical resistivity and conductivityAluminiumElectrical conductivityGeneral Materials ScienceElectrical performanceElectrical conductorbusiness.industryGeneral ChemistrySputter depositionElectrical and optical propertieITO glaIndium tin oxidechemistryvisual_artElectrodevisual_art.visual_art_mediumOptoelectronicsbusinessSilver Aluminum zinc oxideAluminum coatingMagnetron sputtering
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Luminescence properties of III-V multi-junctions solar cells

2012

The recent achievement of multi-junctions solar cells, based on III-V semiconductors, exceeding 43% efficiency, has stimulated a rapid growth of concentration photovoltaic (CPV) technology. The large efficiency of these cells is based on the matching between the semiconductors band gap and the solar spectrum and the capability of working under concentrated illumination, up to ~1000 suns. The research pays, therefore, attention to investigate in detail the mechanisms that affect the conversion efficiency, such as the non radiative losses that increase the cell temperature thus favoring the electron-hole (e-h) recombination. With the aim to clarify the performances of these III-V cells, here …

Solar cells III-V semiconductors electron-hole radiative recombination
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The origin of slow electron recombination processes in dye-sensitized solar cells with alumina barrier coatings

2004

We investigate the effect of a thin alumina coating of nanocrystalline TiO2 films on recombination dynamics of dye-sensitized solar cells. Both coated and uncoated cells were measured by a combination of techniques: transient absorption spectroscopy, electrochemical impedance spectroscopy, and open-circuit voltage decay. It is found that the alumina barrier reduces the recombination of photoinjected electrons to both dye cations and the oxidized redox couple. It is proposed that this observed retardation can be attributed primarily to two effects: almost complete passivation of surface trap states in TiO2 that are able to inject electrons to acceptor species, and slowing down by a factor of…

Solar cellsCharge injectionPassivationAbsorption spectroscopyIon recombinationThin filmsAluminaAnalytical chemistryGeneral Physics and AstronomyPhotochemistryTime resolved spectraTitanium compounds ; Alumina ; Nanostructured materials ; Semiconductor materials ; Thin films ; Solar cells ; Ion recombination ; Dyes ; Charge exchange ; Charge transfer states ; Charge injection ; Electrochemical impedance spectroscopy ; Time resolved spectraSemiconductor materials:FÍSICA [UNESCO]Ultrafast laser spectroscopyCharge exchangeThin filmSpectroscopyDyesQCChemistryUNESCO::FÍSICANanostructured materialsAcceptorDielectric spectroscopyDye-sensitized solar cellTACharge transfer statesTitanium compoundsElectrochemical impedance spectroscopy
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Solid state ionics and optical materials technology for energy efficiency, solar energy conversion, and environment control

1991

The fundamental electronic properties (including optical) of a solid are determined by the character of the interaction between its ionic and electronic subsystems. The state of the ionic subsystem can be changed persistently and reversibly by an external stimulus (current, light). The pertinent ion-controlled phenomena in the solids (solid electrolytes or mixed conductors) causes the ions to be inserted, extracted, transferred, or absorbed or transforms the states of the ions by redox reactions in the bulk or on the surface of the solid or on the interface of a (laminar or planar) solid ionic heterosystem. Several functions can be accomplished: (1) the optical response function of the soli…

Solid state ionicsChemical speciesMaterials sciencebusiness.industryElectrochromismFast ion conductorOptoelectronicsIonic bondingMoleculeEnergy transformationbusinessIonSPIE Proceedings
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Sensitizer exchange dynamics in air and solvent filled semiconductor nanocavities

2010

Multiple dye binding sites and their exchange in equilibrium in air and solvent filled sensitized titanium oxide nanocavities were identified by 2DIR spectroscopy. Binding geometry and flexibility may influence electron injection efficiency of solar cells.

SolventSolar cell efficiencySemiconductorMaterials scienceOrganic solar cellChemical engineeringbusiness.industryQuantum dotAnalytical chemistryInfrared spectroscopyThin filmbusinessTitanium oxideInternational Conference on Ultrafast Phenomena
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