Search results for "Crystallographic"
showing 10 items of 202 documents
The structural properties of GaN/AlN core-shell nanocolumn heterostructures.
2010
International audience; The growth and structural properties of GaN/AlN core-shell nanowire heterostructures have been studied using a combination of resonant x-ray diffraction, Raman spectroscopy and high resolution transmission electron microscopy experiments. For a GaN core of 20 nm diameter on average surrounded by a homogeneous AlN shell, the built-in strain in GaN is found to agree with theoretical calculations performed using a valence force field model. It is then concluded that for an AlN thickness up to at least 12 nm both core and shell are in elastic equilibrium. However, in the case of an inhomogeneous growth of the AlN shell caused by the presence of steps on the sides of the …
The role of impurities in the irradiation induced densification of amorphous SiO(2).
2011
In a recent work (Buscarino et al 2009 Phys. Rev. B 80 094202), by studying the properties of the (29)Si hyperfine structure of the E'(γ) point defect, we have proposed a model able to describe quantitatively the densification process taking place upon electron irradiation in amorphous SiO(2) (a-SiO(2)). In particular, we have shown that it proceeds heterogeneously, through the nucleation of confined densified regions statistically dispersed into the whole volume of the material. In the present experimental investigation, by using a similar approach on a wider set of materials, we explore how this process is influenced by impurities, such as OH and Cl, typically involved in relevant concent…
First-principles calculations of point defects in inorganic nanotubes
2013
The first-principles calculations have been performed to investigate the ground-state properties of monoperiodic boron nitride (BN), TiO2, and SrTiO3 single-walled nanotubes (SW NTs) containing extrinsic point defects. The hybrid exchange–correlation functionals PBE, B3LYP, and B3PW within the framework of density functional theory (DFT) have been applied for large-scale ab initio calculations on NTs with the following substitutional impurities: AlB, PN, GaB, AsN, InB, and SbN in the BN NT, as well as CO, NO, SO, and FeTi in the TiO2 and SrTiO3 NTs, respectively. The variations in formation energies obtained for equilibrium defective nanostructures allow us to predict the most stable compos…
Optical absorption and electron paramagnetic resonance of theEα′center in amorphous silicon dioxide
2008
We report a combined study by optical absorption (OA) and electron paramagnetic resonance (EPR) spectroscopy on the E{sub {alpha}}{sup '} point defect in amorphous silicon dioxide (a-SiO{sub 2}). This defect has been studied in {beta}-ray irradiated and thermally treated oxygen-deficient a-SiO{sub 2} materials. Our results have pointed out that the E{sub {alpha}}{sup '} center is responsible for an OA Gaussian band peaked at {approx}5.8 eV and having a full width at half maximum of {approx}0.6 eV. The estimated oscillator strength of the related electronic transition is {approx}0.14. Furthermore, we have found that this OA band is quite similar to that of the E{sub {gamma}}{sup '} center in…
Optical absorption, luminescence, and ESR spectral properties of point defects in silica
2001
Publisher Summary This chapter is divided into two parts: (1) In the introductory part, it describes the problems of point defects in a-SiO2, and (2) in the second part it discusses the experimental results. This chapter focuses on the Oxygen-Deficient Centers (ODCs) species in silica. This chapter investigates the ODC defects in a-SiO2 through their optical absorption, photoluminescence, and electron spin resonance activities. The effects of γ-ray irradiation are also investigated to evidence their ability to generate or transform structural defects. The aim of this chapter is to understand the optical activity of such defects to help in the characterization of their structure. The propert…
Defect spectroscopy of single ZnO microwires
2014
The point defects of single ZnO microwires grown by carbothermal reduction were studied by microphotoluminescence, photoresistance excitation spectra, and resistance as a function of the temperature. We found the deep level defect density profile along the microwire showing that the concentration of defects decreases from the base to the tip of the microwires and this effect correlates with a band gap narrowing. The results show a characteristic deep defect levels inside the gap at 0.88 eV from the top of the VB. The resistance as a function of the temperature shows defect levels next to the bottom of the CB at 110 meV and a mean defect concentration of 4 1018 cm3 . This combination of tech…
Intrinsic and extrinsic point-defects in vapor transport grown ZnO bulk crystals
2006
Vapor transport grown ZnO bulk crystals were characterized by electrical, optical and magnetic resonance spectroscopy. The experiments show that the residual carrier concentration is caused by residual H, Al, Ga, and oxygen vacancies in the material. Annealing the samples in O 2 at about 1000 °C (2 atm, 20 h) reduces the H and V O donor concentration by typical one order of magnitude. The photoluminescence and DLTS results suggest a correlation between the broad unstructured emission at 2.45eV (green band) and a donor level 530 meV below the conduction band (E4).
Differentiation of natural and synthetic gem-quality diamonds by luminescence properties
2003
Abstract Laser-excited time-resolved and UV-excited static photoluminescence (PL) as well as cathodoluminescence (CL) techniques were applied to identify the origin of diamonds. Samples represented natural faced and rough diamonds from diamond market and different kimberlites as well as the most common high pressure–high temperature (HPHT) and as-grown synthetic diamonds. The time-resolved PL spectra of natural and synthetic diamonds display clear mutual differences. The static PL and CL spectra of natural diamonds revealed emission bands caused by complex nitrogen–vacancy (N–V)-aggregates whereas the bands of synthetic diamonds reflect simple N–V-aggregates and nickel-containing defects. T…
Photoluminescence of Point Defects in Silicon Dioxide by Femtosecond Laser Exposure
2021
The nature of the radiation-induced point defects in amorphous silica is investigated through online photoluminescence (PL) under high intensity ultrashort laser pulses. Using 1030 nm femtosecond laser pulses with a repetition rate of 1 kHz, it is possible to study the induced color centers through their PL signatures monitored during the laser exposure. Their generation is driven by the nonlinear absorption of the light related to the high pulse peak powers provided by femtosecond laser, allowing to probe the optical properties of the laser exposed region. The experiment is conducted as a function of the laser pulse power in samples with different OH contents. The results highlight the dif…
Structural Characterization of Organics Using Manual and Automated Electron Diffraction
2010
In the last decade the importance of transmission electron microscopic studies has become increasingly important with respect to the characterization of organic materials, ranging from small organic molecules to polymers and biological macromolecules. This review will focus on the use of transmission electron microscope to perform electron crystallography experiments, detailing the approaches in acquiring electron crystallographic data. The traditional selected area approach and the recently developed method of automated diffraction tomography (ADT) will be discussed with special attention paid to the handling of electron beam sensitive organic materials.