Search results for "DAMAGE"
showing 10 items of 1289 documents
Cohesive–frictional interface constitutive model
2009
AbstractIn the framework of numerical analysis of joined bodies, the present paper is devoted to the constitutive modeling, via an interface kinematic formulation, of mechanical behaviour of internal adhesive layers. The proposed interface constitutive model couples a cohesive behaviour, based on the damage mechanics theory, with a frictional one, defined in a non-associative plasticity framework. Namely, the interface formulation follows the transition of the adhesive material from the sound elastic condition to the fully cracked one. This formulation is able to model, by means of a specific interpretation of the damage variable and in a relevant mathematical setting, the interface interme…
Texture analysis and optical anisotropy measurements of leukocytes for early diagnostics of diabetes mellitus
2004
DNA damage had been suggested to contribute to the pathogenesis of insulin dependent diabetes mellitus (IDDM). In this work we present a method for detection and discrimination of such DNA changes by means of analysis of light microscope images of anisotropically stained leukocytes nuclei. Several features of the images have been evaluated, including integrated optical density, degree of polarisation, and textural features. A genetic algorithm, coupled with a neural classifier, has been used to find the best features for identification of the pathology. Reported results indicate the best set is able to achieve an 83% correct classification ratio.
Positron studies of hydrogen-defect interactions in proton irradiated molybdenum
1985
Molybdenum single crystals are irradiated at 20 K with 6 MeV protons. The radiation damage and lattice defect annealing is studied by positron lifetime spectroscopy in the temperature range from 15 to 720 K. Loss of vacancies due to recombination with mobile interstitials is observed at 40 K (Stage I) in agreement with resistivity measurements. This is the first time Stage I is observed by positrons below 77 K. The implanted hydrogen decorates the vacancies around 100 K, which is consistent with a hydrogen migration energy in molybdenum:E H = 0.3–0.4 eV. Clustering of spatially correlated vacancies takes place in a wide temperature region below the usual vacancy clustering stage (Stage III)…
Novel hybrid polymer composites with graphene and MXene nano-reinforcements: computational analysis
2021
This paper presents a computational analysis on the mechanical and damage behavior of novel hybrid polymer composites with graphene and MXene nano-reinforcements targeted for flexible electronics and advanced high-strength structural applications with additional functions, such as real-time monitoring of structural integrity. Geometrical models of three-dimensional representative volume elements of various configurations were generated, and a computational model based on the micromechanical finite element method was developed and solved using an explicit dynamic solver. The influence of the geometrical orientation, aspect ratio, and volume fractions of the inclusions, as well as the interfa…
Heavy-ion induced single event effects and latent damages in SiC power MOSFETs
2022
The advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for space, avionics and high-energy accelerator applications. However, the current commercial technologies are still susceptible to Single Event Effects (SEEs) and latent damages induced by the radiation environment. Two types of latent damage were experimentally observed in commercial SiC power MOSFETs exposed to heavy-ions. One is observed at bias voltages just below the degradation onset and it involves the gate oxide. The other damage type is observed at bias voltages below the Single Event Burnout (SEB) limit, and it is attributed to alterations of the SiC crystal-lattice. Focused ion beam (FIB) and s…
Effects of irradiation damage on the back-scattering of electrons: silicon-implanted silicon
2007
Radiation damage in an (initially crystalline) silicon wafer was generated by microbeam implantation with 600 keV Si+ ions (fluence 5 x 1014 ions/cm²). To produce micro-areas with different degrees of damage, 14 implantations at different temperatures (between 23 and 225 °C) were done. The structural state of irradiated areas was characterized using Raman spectroscopy and electron back-scatter diffraction. All irradiated areas showed strong structural damage in surficial regions (estimated depth <1 μm), and at implant substrate temperatures of below 130 °C, the treatment has caused complete amorphization. Back-scattered electron (BSE) images exhibited that observed BSE intensities correlate…
Silicon dioxide thin film luminescence in comparison with bulk silica
1998
Abstract The luminescence of the self-trapped exciton (STE) in SiO2 films was measured at low temperatures on the background of defect luminescence under cathodoexcitation and compared with bulk silica luminescence. The defect luminescence is mainly caused by non-bridging oxygen centers (a red luminescence band at 1.8 eV) and twofold coordinated silicon centers (blue and ultraviolet luminescence with 2.7 and 4.4 eV bands, respectively). The STE luminescence with a band at 2.3 eV is uniformly distributed within SiO2 film volume. Contrary to defect luminescence, whose intensity increases with irradiation time, the STE luminescence decreases almost to zero in a few seconds of irradiation time.…
A theoretical and experimental study to point out the notion of loading mode in damage mechanicsApplication to the identification and validation of a…
2002
A model of fatigue-induced intralaminar cracking in strongly anisotropic laminates is presented. The features of the microscopic phenomenon are explicitly taken into account at the macroscopic level by the use of two variables, which define a new concept in Damage Mechanics that results not only in a coherent model of crack density evolution, but also in a coherent treatment of damage deactivation. Damage evolution indeed is strongly dependent on the local loading mode in each ply where cracking occurs. Experiments on complex lay-ups provided sufficient data for complete calibration of the model. These tests also allowed to validate the theoretical choice of the damage variable. Finally, nu…
Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages
2008
Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene-glycol is described. Leakage currents decrease of more than a factor of 10 and are completely suppressed in most of devices.
Critical Planes in Multiaxial Fatigue
2005
The paper includes a review of literature on the multiaxial fatigue failure criteria based on the critical plane concept. The criteria were divided into three groups according to the distinguished fatigue damage parameter used in the criterion, i.e. (i) stress, (ii) strain and (iii) strain energy density criteria. Each criterion was described mainly by the applied the critical plane position. The multiaxial fatigue criteria based on two critical planes seem to be the most promising. These two critical planes are determined by different fatigue damage mechanisms (shear and tensile mechanisms).