Search results for "DEVICES"

showing 10 items of 615 documents

A prototypal architecture of a IEEE 21451 network for smart grid applications based on power line communications

2015

This paper deals with the development of reliable measurement and communication devices and systems and their integration on a prototypal network architecture for smart grid applications, based on the use of narrowband power line communications (PLCs). The proposed solution is presented and discussed in the framework of the ISO/IEC/IEEE 21451 family of Standards. Currently, PLCs are not properly addressed by the aforesaid Standards; on the other hand, by including such issue, their guidelines could represent a common platform for the integration and interoperability of the proposed systems and devices. This would allow to exploit the benefits of the IEEE 21451 approach also for PLC-based sm…

Network architectureEngineeringExploitbusiness.industryinterface devices smart grids power system communications power system measurements distributed monitoring and control ISO/IEC/IEEE 21451InteroperabilitySettore ING-IND/32 - Convertitori Macchine E Azionamenti ElettriciAutomationPower-line communicationSmart gridDNP3Embedded systemdistributed monitoring and control; Interface devices; ISO/IEC/IEEE 21451; power system communications; power system measurements; smart gridsElectrical and Electronic EngineeringArchitecturebusinessSettore ING-INF/07 - Misure Elettriche E ElettronicheInstrumentation
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Assessment of mental stress through the analysis of physiological signals acquired from wearable devices

2019

Mental stress is a physiological state that directly correlates to the quality of life of individuals. Generally speaking, but especially true for disabled or elderly subjects, the assessment of such condition represents a very strong indicator correlated to the difficulties, and, in some case, to the frustration that derives from the execution of a task that results troublesome to be accomplished. This article describes a novel procedure for the assessment of the mental stress level through the use of low invasive wireless wearable devices. The information contained in electrocardiogram, respiratory signal, blood volume pulse, and electroencephalogram was extracted to set up an estimator f…

Network physiologybusiness.industryComputer scienceStress assessmentEstimatorCognitionBlood volume pulseClassificationIndustrial and Manufacturing EngineeringRandom forestTask (project management)Mental stressMachine learningSet (psychology)businessWearable technologyWearable devices MeasurementCognitive psychology
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Real-Time Vector Automata

2013

We study the computational power of real-time finite automata that have been augmented with a vector of dimension k, and programmed to multiply this vector at each step by an appropriately selected k×k matrix. Only one entry of the vector can be tested for equality to 1 at any time. Classes of languages recognized by deterministic, nondeterministic, and "blind" versions of these machines are studied and compared with each other, and the associated classes for multicounter automata, automata with multiplication, and generalized finite automata.

Nondeterministic algorithmDiscrete mathematicsMatrix (mathematics)TheoryofComputation_MATHEMATICALLOGICANDFORMALLANGUAGESTheoryofComputation_COMPUTATIONBYABSTRACTDEVICESFinite-state machineDimension (vector space)Computer scienceMultiplicationNonlinear Sciences::Cellular Automata and Lattice GasesComputer Science::Formal Languages and Automata TheoryAutomatonPower (physics)
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Polarization attraction using counter-propagating waves in optical fiber at telecommunication wavelengths

2008

International audience; In this work, we report the experimental observation of a polarization attraction process which can occur in optical fibers at telecommunication wavelengths. More precisely, we have numerically and experimentally shown that a polarization attractor, based on the injection of two counter-propagating waves around 1.55 mu m into a 2-m long high nonlinear fiber, can transform any input polarization state into a unique well-defined output polarization state.

Nonlinear opticsPhysics::OpticsPolarization-maintaining optical fiber02 engineering and technologyfibers01 natural sciencesNonlinear optical devices010309 optics020210 optoelectronics & photonicsOpticsPolarization0103 physical sciences0202 electrical engineering electronic engineering information engineeringFiber Optic TechnologyComputer SimulationOptical FibersCircular polarizationPhysics[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics][ PHYS.PHYS.PHYS-OPTICS ] Physics [physics]/Physics [physics]/Optics [physics.optics]Polarization rotatorbusiness.industrySingle-mode optical fiberSignal Processing Computer-AssistedPolarization (waves)Optical FiberAtomic and Molecular Physics and OpticsNonlinear DynamicsCross-polarized wave generationPolarization mode dispersionTelecommunicationsOptical TelecommunicationbusinessTelecommunicationsPhotonic-crystal fiberOptics Express
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Quasi-sinusoidal oscillations in negative resistance devices with piece-wise analytical characteristics

1976

The second-order approximated solution of a negative resistance oscillator whose active device has a piece-wise analytical characteristic is presented. The frequency and the harmonic content of the oscillation waveform are obtained as functions of the circuit parameters and of the device bias.

Nonlinear oscillatorsControl theoryOscillationNegative resistanceMathematical analysisGeneral EngineeringHarmonicPiecewiseWaveformActive devicesMathematicsIEEE Transactions on Circuits and Systems
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Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence

2017

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence. peerReviewed

Nuclear and High Energy PhysicsMaterials scienceAnnealing (metallurgy)Schottky barrierschottky diodes01 natural sciencesFluenceIonpower semiconductor deviceschemistry.chemical_compoundsilicon carbide0103 physical sciencesSilicon carbidecurrent-voltage characteristicsElectrical and Electronic EngineeringLeakage (electronics)Diode010302 applied physicsta114ta213010308 nuclear & particles physicsbusiness.industrySchottky diodemodelingNuclear Energy and EngineeringchemistryOptoelectronicsbusinession radiation effectsIEEE Transactions on Nuclear Science
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Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers

2018

Broad-beam and microbeam single-event effect tests were performed on metal–insulator–metal capacitors with three different thicknesses of silicon nitride (Si3N4) dielectric insulator: 250, 500, and 750 nm. The broad-beam tests indicated that the devices with the thicker, 500- and 750-nm dielectric did not have a greater breakdown voltage. The surrounding structures of the capacitor were suspected to be a possible cause. Microbeam techniques made it possible to localize the failure location for the 500- and 750-nm devices. The failure occurs in the air bridge structure connected to the top capacitor plate, which can therefore be considered as an edge effect, while for the 250-nm devices, the…

Nuclear and High Energy PhysicsMaterials scienceInsulator (electricity)Dielectrickondensaattorit01 natural sciencesmetal–insulator–semiconductor (MIS) deviceslaw.inventionelektroniikkakomponentitchemistry.chemical_compoundlaw0103 physical sciencesBreakdown voltageElectrical and Electronic EngineeringMetal–insulator–metal (MIM) devicessingle event effects (SEEs)ta114ta213010308 nuclear & particles physicsbusiness.industryAmplifierMicrobeamsingle event gate ruptureCapacitorNuclear Energy and EngineeringSilicon nitridechemistrysäteilyfysiikkaElectrodeOptoelectronicsbusinessIEEE Transactions on Nuclear Science
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Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

2017

International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.

Nuclear and High Energy PhysicsMaterials scienceSchottky barrierschottky diodesmodelling (creation related to information)01 natural sciencesElectronic mailIonpower semiconductor devicesReverse leakage currentchemistry.chemical_compoundsilicon carbide0103 physical sciencesSilicon carbideElectrical and Electronic Engineering[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsDiode010302 applied physicsta114010308 nuclear & particles physicsbusiness.industrydiodesSchottky diodesiliconmodelingradiationNuclear Energy and EngineeringchemistryionsOptoelectronicsbusinession radiation effectsVoltageIEEE Transactions on Nuclear Science
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Single-Event Burnout Mechanisms in SiC Power MOSFETs

2018

Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. peerReviewed

Nuclear and High Energy PhysicsMaterials sciencesingle-event burnoutpower MOSFETs01 natural sciencesdevice simulationselektroniikkakomponentitchemistry.chemical_compoundsilicon carbide0103 physical sciencesMOSFETSilicon carbideElectrical and Electronic EngineeringPower MOSFETheavy ions010302 applied physicspower devicesta114ta213010308 nuclear & particles physicsbusiness.industryionisoiva säteilyBipolar junction transistorsingle event effectsThreshold voltageImpact ionizationsäteilyfysiikkaNuclear Energy and EngineeringchemistrytransistoritOptoelectronicsbusinessCurrent densityVoltageIEEE Transactions on Nuclear Science
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Correcting for Potential Barriers in Quantum Walk Search

2015

A randomly walking quantum particle searches in Grover's $\Theta(\sqrt{N})$ iterations for a marked vertex on the complete graph of $N$ vertices by repeatedly querying an oracle that flips the amplitude at the marked vertex, scattering by a "coin" flip, and hopping. Physically, however, potential energy barriers can hinder the hop and cause the search to fail, even when the amplitude of not hopping decreases with $N$. We correct for these errors by interpreting the quantum walk search as an amplitude amplification algorithm and modifying the phases applied by the coin flip and oracle such that the amplification recovers the $\Theta(\sqrt{N})$ runtime.

Nuclear and High Energy PhysicsQuantum PhysicsTheoryofComputation_COMPUTATIONBYABSTRACTDEVICESComplete graphGeneral Physics and AstronomyFOS: Physical sciencesTheoryofComputation_GENERALStatistical and Nonlinear PhysicsOracleTheoretical Computer ScienceVertex (geometry)CombinatoricsAmplitudeComputational Theory and MathematicsAmplitude amplificationTheoryofComputation_ANALYSISOFALGORITHMSANDPROBLEMCOMPLEXITYGrover's algorithmQuantum algorithmQuantum walkQuantum Physics (quant-ph)Mathematical PhysicsMathematicsMathematicsofComputing_DISCRETEMATHEMATICS
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