Search results for "Diode"

showing 10 items of 469 documents

Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures

1998

In this work we show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of /spl sim/4/spl times/10/sup 14/ p/cm/sup 2/, no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T<120 K. Besides confirming the previously observed 'Lazarus effect' in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments.

Nuclear and High Energy PhysicsMaterials sciencePassivationSiliconbusiness.industryDetectorchemistry.chemical_elementRadiationTracking (particle physics)FluenceNuclear Energy and EngineeringchemistryOptoelectronicsIrradiationDetectors and Experimental TechniquesElectrical and Electronic EngineeringbusinessDiodeIEEE Transactions on Nuclear Science
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Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

2017

International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.

Nuclear and High Energy PhysicsMaterials scienceSchottky barrierschottky diodesmodelling (creation related to information)01 natural sciencesElectronic mailIonpower semiconductor devicesReverse leakage currentchemistry.chemical_compoundsilicon carbide0103 physical sciencesSilicon carbideElectrical and Electronic Engineering[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsDiode010302 applied physicsta114010308 nuclear & particles physicsbusiness.industrydiodesSchottky diodesiliconmodelingradiationNuclear Energy and EngineeringchemistryionsOptoelectronicsbusinession radiation effectsVoltageIEEE Transactions on Nuclear Science
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Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments

2019

A two-photon absorption technique is used to understand the mechanisms of single-event effects (SEEs) in silicon carbide power metal–oxide–field-effect transistors (MOSFETs) and power junction barrier Schottky diodes. The MOSFETs and diodes have similar structures enabling the identification of effects associated specifically with the parasitic bipolar structure that is present in the MOSFETs, but not the diodes. The collected charge in the diodes varies only with laser depth, whereas it varies with depth and lateral position in the MOSFETs. Optical simulations demonstrate that the variations in collected charge observed are from the semiconductor device structure and not from metal/passiva…

Nuclear and High Energy PhysicsMaterials sciencesingle-event effectsSchottky diodesSemiconductor laser theoryelektroniikkakomponentitchemistry.chemical_compoundsilicon carbideMOSFETSilicon carbidetwo-photon absorptionElectrical and Electronic EngineeringPower MOSFETvertical MOSFETDiodebusiness.industrySchottky diodeSemiconductor deviceNuclear Energy and EngineeringchemistrysäteilyfysiikkatransistoritOptoelectronicsCharge carrierdioditbusinesspulse height analysis
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Probing the Merits of Different Event Parameters for the Identification of Light Charged Particles in CHIMERA CsI(Tl Detectors With Digital Pulse Sha…

2013

We investigated the merits of different event parameters in the identification of Light Charged Particles (LCPs) with CsI(Tl) scintillators read out by photodiodes at high incident energy (400 MeV/u). This investigation is made possible by digital signal processing the output signals. As in the conventional analogue case, the digitized signals allow the discrimination of light charged particles by computing the fast and slow components. In addition other identification parameters as the rise time of the output pulses of the CsI(Tl) come out nearly for free. Aim of this paper is the investigation of novel identification plots and the probe of their merits, in particular at relativistic energ…

Nuclear and High Energy PhysicsPhysics::Instrumentation and Detectorsintermediate energy nuclear physicpulse shape analysiScintillatorParticle identificationlaw.inventionOpticslawElectrical and Electronic EngineeringDigital signal processingPhysicsonline digital signal processingSignal processingsezeleCsI(Tl) scintillatorsbusiness.industrypulse shape analysisDetectorCsI(Tl) scintillatorCsI(Tl) scintillators; intermediate energy nuclear physics; online digital signal processing; particle identification; pulse shape analysisCsI(Tl) scintillators; intermediate energy nuclear physics; online digital signal processing; particle identification; pulse shape analysis; Electrical and Electronic Engineering; Nuclear Energy and Engineering; Nuclear and High Energy PhysicsCharged particlePhotodiodeintermediate energy nuclear physicsNuclear Energy and EngineeringRise timeparticle identificationbusinessnuclear physics; heavy-ions; digital signal processing; scintillation detectors
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Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation

2022

The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. The results were comparable, although the data may indicate a marginally lower thresholds for the isotopic enriched devices at lower linear energy transfer (LET). Slightly higher reverse bias threshold values for leakage current degradation were also observed compared to previously published work.

Nuclear and High Energy Physicsionisoiva säteilySchottky diodesheavy ion irradiationleakage current degradationsingle event effectselektroniikkakomponentitsäteilyfysiikkaNuclear Energy and Engineeringsilicon carbidemonoisotopicpuolijohteetdioditElectrical and Electronic EngineeringDetectors and Experimental Techniquessingle event burnout
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A gas ionisation Direct-STIM detector for MeV ion microscopy

2015

Abstract Direct-Scanning Transmission Ion Microscopy (Direct-STIM) is a powerful technique that yields structural information in sub-cellular whole cell imaging. Usually, a Si p-i-n diode is used in Direct-STIM measurements as a detector. In order to overcome the detrimental effects of radiation damage which appears as a broadening in the energy resolution, we have developed a gas ionisation detector for use with a focused ion beam. The design is based on the ETH Frisch grid-less off-axis Geiger–Muller geometry. It is developed for use in a MeV ion microscope with a standard Oxford Microbeams triplet lens and scanning system. The design has a large available solid angle for other detectors …

Nuclear and High Energy Physicsta114Physics::Instrumentation and Detectorsbusiness.industryChemistryResolution (electron density)DetectorTriplet lensMeV ion microscopeFocused ion beamionisation detectorOpticsIonizationRadiation damagedirect-STIMAtomic physicsbioimagingbusinessInstrumentationField ion microscopeReNcells VMDiodeNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Numerical approximation of the viscous quantum hydrodynamic model for semiconductors

2006

The viscous quantum hydrodynamic equations for semiconductors with constant temperature are numerically studied. The model consists of the one-dimensional Euler equations for the electron density and current density, including a quantum correction and viscous terms, coupled to the Poisson equation for the electrostatic potential. The equations can be derived formally from a Wigner-Fokker-Planck model by a moment method. Two different numerical techniques are used: a hyperbolic relaxation scheme and a central finite-difference method. By simulating a ballistic diode and a resonant tunneling diode, it is shown that numerical or physical viscosity changes significantly the behavior of the solu…

Numerical AnalysisApplied MathematicsNumerical analysisFinite difference methodResonant-tunneling diodeFinite differenceRelaxation (iterative method)Euler equationsComputational Mathematicssymbols.namesakeClassical mechanicsQuantum hydrodynamicssymbolsPoisson's equationMathematicsApplied Numerical Mathematics
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Concatenated logic functions using nanofluidic diodes with all-electrical inputs and outputs

2018

[EN] Nanopore-based logical schemes in ionic solutions typically involve single gates and chemical inputs. The design of computer-like functions requires the consecutive concatenation of several gates and the use of electrical potentials and currents to facilitate the downstream transfer of electrochemical information. We have demonstrated the robust operation of concatenated logic functions using biomimetic nanofluidic diodes based on single pore membranes. To this end, we have implemented first the logic functions AND and OR with combinations of single nanopores using all-electrical input and output signals. The concatenation of these gates allows the output of the OR gate to act as one o…

OR gateComputer scienceConcatenation02 engineering and technologySignal transduction010402 general chemistry01 natural sciencesSignallaw.inventionlcsh:ChemistrylawElectrochemistryElectronic engineeringHardware_ARITHMETICANDLOGICSTRUCTURESElectronic circuitTransistor021001 nanoscience & nanotechnology0104 chemical sciencesNanofluidic diodelcsh:Industrial electrochemistrylcsh:QD1-999FISICA APLICADAElectrochemical logic functionsInverter0210 nano-technologyAND gatelcsh:TP250-261Hardware_LOGICDESIGNNOR gateElectrochemistry Communications
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Intensity modulated radiation therapy with simultaneous integrated boost in early breast cancer irradiation. Report of feasibility and preliminary to…

2015

To investigate the feasibility and tolerance in the use of adjuvant intensity modulated radiation therapy (IMRT) and simultaneous integrated boost in patients with a diagnosis of breast cancer after breast-conserving surgery.Between September 2011 to February 2013, 112 women with a diagnosis of early breast cancer (T1-2, N0-1, M0) were treated with IMRT and simultaneous integrated boost after breast-conserving surgery in our institution. A dose of 50Gy in 25 fractions was prescribed to the whole breast and an additional dose of radiation was prescribed on the tumour bed. A dose prescription of 60Gy in 25 fractions to the tumour bed was used in patients with negative margins after surgery, w…

Oncologymedicine.medical_treatmentSegmentalMastectomy SegmentalSeverity of Illness IndexBreast cancerNuclear Medicine and ImagingDuctalIntensity-Modulated80 and overBreastMastectomyAdjuvantEarly breast cancerAged 80 and overCarcinoma Ductal BreastSIBRadiotherapy DosageMiddle AgedOncologyBreast cancer; IMRT; SIB; Toxicity; Adult; Aged; Aged 80 and over; Breast Neoplasms; Carcinoma Ductal Breast; Carcinoma Lobular; Esthetics; Feasibility Studies; Female; Follow-Up Studies; Humans; Mastectomy Segmental; Middle Aged; Radiodermatitis; Radiotherapy Dosage; Radiotherapy Adjuvant; Severity of Illness Index; Radiotherapy Intensity-Modulated; Oncology; Radiology Nuclear Medicine and ImagingToxicityFemaleRadiologyRadiodermatitisRadiologyAdjuvantSimultaneous integrated boostAdultmedicine.medical_specialtyEstheticsBreast NeoplasmsLobularBreast cancerInternal medicineSeverity of illnessmedicineHumansRadiology Nuclear Medicine and imagingIMRTAgedToxicityRadiotherapybusiness.industryCarcinomaIntensity-modulated radiation therapymedicine.diseaseAcute toxicityBreast cancer; IMRT; SIB; Toxicity; Oncology; Radiology Nuclear Medicine and ImagingCarcinoma LobularFeasibility StudiesRadiotherapy AdjuvantRadiotherapy Intensity-ModulatedbusinessFollow-Up Studies
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Enhancement of the Performance of Perovskite Solar Cells, LEDs, and Optical Amplifiers by Anti-Solvent Additive Deposition

2016

The efficiency of perovskite optoelectronic devices is increased by a novel method; its suitability for perovskite solar cells, light-emitting diodes, and optical amplifiers is demonstrated. The method is based on the introduction of organic additives during the anti-solvent step in the perovskite thin-film deposition process. Additives passivate grain boundaries reducing non-radiative recombination. The method can be easily extended to other additives.

Optical amplifierMaterials sciencePassivationbusiness.industryMechanical Engineeringfood and beverages02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical scienceslaw.inventionMechanics of MaterialslawDeposition (phase transition)OptoelectronicsGeneral Materials ScienceAnti solventGrain boundary0210 nano-technologybusinessPerovskite (structure)Light-emitting diodeDiodeAdvanced Materials
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