Search results for "ELECTRONICS"
showing 10 items of 4340 documents
A Portable Readout System for Microstrip Silicon Sensors (ALIBAVA)
2009
A readout system for microstrip silicon sensors has been developed. This system is able to measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256. The system can operate either with non-irradiated and irradiated sensors as well as with n-type and p-type microstrip silicon sensors. Heavily irradiated sensors will be used at the Super Large Hadron Collider, so this system can be used to research the performance of microstrip silicon sensors in conditions as similar as possible to the Super Large Hadron Collider operating conditions. The system has two main parts: a hardware part and a software part. The hardware part a…
Fast and compact data acquisition for gas-filled detectors with delay line
2004
This article describes the functionality, implementation and performance of a PCI data acquisition board that can be used in conjunction with gas-filled detectors with delay line readout. The board combines a large on-board 256-MByte histogramming memory with a maximum 10-MHz count rate in continuous operation and integrates the time frame generation, histogram building and buffering functionalities in a single PCI board, resulting in a fast, compact and cost-effective data acquisition solution for the Spanish beamline BM16 at ESRF.
The Argo YBJ daq system and the GRID based data transfer
2008
The Argo-YBJ experiment has now reached itsfinal design configuration. The detector system consists of a fullcoverage array (about 5800 square meters) of Resistive PlateChambers (RPCs). The throughput depends on the trigger rateand threshold. The DAQ system must be able to sustain a max-imum transfer rate of the order of 15 MB/s and a high peakdata flow. Data are read out using a typical front-end acquisitionchain built around a custom bus. Specialized electronics have beendesigned and dedicated software has been written to perform thistask. Data are sent to the online farm through a switch exploitinga gigabit ethernet protocol. A solution to transfer data from theYBJ laboratory to the labo…
Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs
2015
International audience; Various failure scenarios may occur during irradiation testing of SRAMs, which may generate different characteristic Multiple Cell Upset (MCU) error patterns. This work proposes a method based on spatial and temporal criteria to identify them.
Fabrication of a negative PMMA master mold for soft-lithography by MeV ion beam lithography
2012
Abstract In this study, poly(methyl methacrylate) (PMMA) was investigated as a negative resist by irradiation with a high-fluence 2 MeV proton beam. The beam from a 1.7 MV Tandetron accelerator at the Plasma and Beam Physics Research Facility (PBP) of Chiang Mai University is shaped by a pair of computer-controlled L-shaped apertures which are used to expose rectangular pattern elements with 1–1000 μm side length. Repeated exposure of rectangular pattern elements allows a complex pattern to be built up. After subsequent development, the negative PMMA microstructure was used as a master mold for casting poly(dimethylsiloxane) (PDMS) following a standard soft-lithography process. The PDMS chi…
Evaluation of Mechanisms in TID Degradation and SEE Susceptibility of Single- and Multi-Level High Density NAND Flash Memories
2011
Heavy ion single-event measurements and total ionizing dose (TID) response for 8 Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories.
Formation of cobalt silicide films by ion beam deposition
2006
Abstract Thin films of cobalt silicide are widely used as metallization in very large-scale integrated electronic circuits. In this study, Co ions were deposited on Si(1 1 1) wafers by a high beam current filter metal vacuum arc deposition (FMEVAD) system. Surface silicide films were formed after annealing from 500 to 700 °C for 30 min. The results show that a thin CoSi2 surface layer with both a smooth surface topography and sharp interface can be achieved by annealing at 700 °C. The CoSi phase and O contamination were observed in the samples that were annealed at lower temperatures.
The laser ion source and trap (LIST) – A highly selective ion source
2008
A combined structure consisting of a laser ion source and a linear Paul trap (LIST) has been designed to produce radioactive ion beams of high purity and optimal temporal and spacial brilliance at on-line isotope separator (ISOL) facilities. The functionality of the LIST was experimentally demonstrated in off-line tests using the RISIKO off-line mass separator together with an all solid state Ti:sapphire laser system at the University of Mainz. Two different ion trap designs were tested extracting the performance of these devices regarding ionization efficiency and selectivity as well as time structure and transverse emittance of the produced ion beam. The results of these measurements are …
Optical spectroscopy and performance tests with a solid state laser ion source at HRIBF
2008
An ISOLDE-type hot-cavity laser ion source based on high-repetition-rate Ti:Sapphire lasers has been set up at the Holifield radioactive ion beam facility. To assess the feasibility of the all-solid-state laser system for applications at advanced radioactive ion beam facilities, spectroscopy and performance tests have been conducted with this source. The results of recent studies on excitation schemes, source efficiency, beam emittance and ion time structure are presented.
Advances in surface ion suppression from RILIS: Towards the Time-of-Flight Laser Ion Source (ToF-LIS)
2016
Abstract We present results from the development towards the Time-of-Flight Laser Ion Source (ToF-LIS) aiming for the suppression of isobaric contaminants through fast beam gating. The capability to characterize high resistance ion sources has been successfully demonstrated. A ninefold selectivity gain has been achieved through suppression of surface ionized potassium, while maintaining >90% transmission for laser-ionized gallium using a thin wall graphite ionizer cavity combined with a fast beam gate. Initial results from the investigation of glassy carbon as a potential hot cavity ion source are presented. Power-cycle tests of a newly designed mount for fragile ion source cavities indicat…