Search results for "ELECTRONICS"
showing 10 items of 4340 documents
Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs
2020
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, reflecting the striped structure of the power MOSFET investigated. Two different mechanisms were observed for degradation. At low drain bias (gate and source grounded), only the gate-oxide (at the JFET or neck region) is contributing in the ion-induced leakage current. For exposures at drain–source bias voltages higher than a specific threshold, additional higher drain leakage current is observed in t…
Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
2021
Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between drain and gate, similar to what was previously observed with heavy-ions, while the second exhibiting a complete gate rupture. The observed fail…
Single-Event Burnout Mechanisms in SiC Power MOSFETs
2018
Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. peerReviewed
Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments
2019
A two-photon absorption technique is used to understand the mechanisms of single-event effects (SEEs) in silicon carbide power metal–oxide–field-effect transistors (MOSFETs) and power junction barrier Schottky diodes. The MOSFETs and diodes have similar structures enabling the identification of effects associated specifically with the parasitic bipolar structure that is present in the MOSFETs, but not the diodes. The collected charge in the diodes varies only with laser depth, whereas it varies with depth and lateral position in the MOSFETs. Optical simulations demonstrate that the variations in collected charge observed are from the semiconductor device structure and not from metal/passiva…
Adhesion of proton beam written high aspect ratio hydrogen silsesquioxane (HSQ) nanostructures on different metallic substrates
2009
Abstract Hydrogen silsesquioxane (HSQ) behaves as a negative resist under MeV proton beam exposure. HSQ is a high-resolution resist suitable for production of tall (
Proton beam written hydrogen silsesquioxane (HSQ) nanostructures for Nickel electroplating
2009
Abstract Hydrogen silsesquioxane (HSQ) behaves as a negative resist under MeV proton beam exposure. HSQ is a high-resolution resist suitable for production of tall ( 1.5 μ m ) high-aspect-ratio nanostructures with dimensions down to 22 nm. High-aspect-ratio HSQ structures are required in many applications, e.g. nanofluidics, biomedical research, etc. Since P-beam writing is a direct and hence slow process, it is beneficiary to fabricate a reverse image of the patterns in a metallic stamp, e.g. by Ni electroplating. The Ni stamp can then be used to produce multiple copies of the same pattern. In this study we investigate the possibility to produce Ni stamps from p-beam written HSQ samples. H…
Combined High Dose and Temperature Radiation Effects on Multimode Silica-Based Optical Fibers
2013
International audience; We investigate the response of Ge-doped, P-doped, pure-silica, or Fluorine-doped fibers to extreme environments combining doses up to MGy(SiO $_{{{2}}}$) level of 10 keV X-rays and temperatures between 25 C and 300 C . First, we evaluate their potential to serve either as parts of radiation tolerant optical or optoelectronic systems or at the opposite, for the most sensitive ones, as punctual or distributed dosimeters. Second, we improve our knowledge on combined ionizing radiations and temperature (R&T) effects on radiation-induced attenuation (RIA) by measuring the RIA spectra in the ultraviolet and visible domains varying the R&T conditions. Our results reveal the…
Evaluation of Distributed OFDR-Based Sensing Performance in Mixed Neutron/Gamma Radiation Environments
2017
We report the study of a radiation resistant single mode optical fiber doped with fluorine exposed to mixed neutron and $\gamma $ -radiation up to $10^{17}$ n/cm2 fluence and >2 MGy dose to evaluate its performances when used as the sensing element of a distributed Optical Frequency Domain Reflectometry (OFDR). The use of complementary spectroscopic techniques highlights some differences between the responses of solely $\gamma $ -radiation (10 MGy) or mixed neutron and $\gamma $ ( $10^{17}$ n/cm $^{2}+>2$ MGy) irradiated samples. Those differences are linked to the defect generation rather than to structural changes of the ${a}$ -SiO2 host matrix. We show that a modification of the refracti…
UV–VUV laser induced phenomena in SiO2 glass
2004
Abstract Creation and annihilation of point defects were studied for SiO2 glass exposed to ultraviolet (UV) and vacuum UV (VUV) lights to improve transparency and radiation toughness of SiO2 glass to UV–VUV laser light. Topologically disordered structure of SiO2 glass featured by the distribution of SiOSi angle is a critical factor degrading transmittance near the fundamental absorption edge. Doping with terminal functional groups enhances the structural relaxation and reduces the number of strained SiOSi bonds by breaking up the glass network without creating the color centers. Transmittance and laser toughness of SiO2 glass for F2 laser is greatly improved in fluorine-doped SiO2 glass…
Time-resolved luminescence of YAG:Ce and YAGG:Ce ceramics prepared by electron beam assisted synthesis
2020
Abstract The luminescence characteristics of YAG:Ce and YAGG:Ce ceramic phosphors produced by electron beam assisted synthesis have been investigated. The obtained emission and decay kinetics characteristics have been compared with those for commercial phosphors synthesized by conventional methods and showed good qualitative and quantitative correspondence. In our opinion, the used electron-beam-assisted synthesis method could be considered as a perspective production method of high refractory multicomponent oxide ceramics.