Search results for "Electron microscope"
showing 10 items of 784 documents
Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy
1997
Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x = 0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth…
Mechanism of large oscillations of anodic potential during anodization of silicon in H3PO4/HF solutions
2000
Abstract Effect of large oscillations of electrical potential during anodic polarization of silicon in electrolytes composed of phosphoric and hydrofluoric acids has been reported. The oscillations last hours without damping if experimental conditions are optimal. Changes of temperature, anodic current density, intensity of stirring, etc. quench them or convert into less periodic ones. The oscillations are of very high amplitude (typically 15 V) with a period ranging from 18 to 30 s. Scanning electron microscopy (SEM)-imaging of the samples experiencing the oscillatory kinetic behaviour shows unambiguously that the stage of the anodic voltage growth is assisted by the formation of a thin (5…
Fabrication of superconducting tantalum nitride thin films using infra-red pulsed laser deposition
2013
We report the successful fabrication of superconducting tantalum nitride (TaN) thin films using a pulsed laser deposition technique with 1064 nm radiation. Films with thickness $ \sim $ 100 nm deposited on MgO (100) single crystals and on oxidized silicon (SiO$_{2} $) substrates exhibited a superconducting transition temperature of $\sim $ 8 K and 6 K, respectively. The topography of these films were investigated using atomic force and scanning electron microscopy, revealing fairly large area particulate free and smooth surfaces, while the structure of the films were investigated using standard $ \theta -2 \theta $ and glancing angle X-ray diffraction techniques. For films grown on MgO a fa…
Alumina particle reinforced TiO2 composite films grown by direct liquid injection MOCVD
2014
Abstract The use of a liquid injection delivery system to form composite films containing nanoparticles was investigated. Al 2 O 3 –TiO 2 films were grown on silicon substrates by direct liquid injection MOCVD (DLI-MOCVD) at 400 °C. The α-Al 2 O 3 nanoparticles (α-Al 2 O 3 NPs) dispersed in TiO 2 films resulted from co-deposition using colloidal α-Al 2 O 3 solution and titanium tetraisopropoxide as titanium precursor. Scanning electron microscopy coupled with EDS as well as Raman spectroscopy confirmed the presence of α-Al 2 O 3 NPs aggregates embedded in the TiO 2 matrix. The liquid injection system coupled with CVD technique can be promising to form composite films containing preformed na…
In situ measurement of the kinetic friction of ZnO nanowires inside a scanning electron microscope
2012
Abstract A novel method for measuring the kinetic friction force in situ was developed for zinc oxide nanowires on highly oriented pyrolytic graphite and oxidised silicon wafers. The experiments were performed inside a scanning electron microscope and used a nanomanipulation device as an actuator, which also had an atomic force microscope tip attached to it as a probe. A simple model based on the Timoshenko elastic beam theory was applied to interpret the elastic deformation of a sliding nanowire (NW) and to determine the distributed kinetic friction force.
Correlation Between the Electrical Properties and the Morphology of Low-Pressure MOCVD Titanium Oxynitride Thin Films Grown at Various Temperatures
2000
Titanium oxynitride (TiN x O y ) thin films were deposited by low-pressure metal-organic CVD (LP-MOCVD) on (100) silicon, sapphire, and polycrystalline alumina substrates. Titanium isopropoxide (TIP) and ammonia were used as precursors. The influence of the growth temperature, ranking from 450°C to 750°C, was investigated by scanning electron microscopy (SEM), and electrical DC measurements. Rutherford back-scattering (RBS) measurements were used to determine the N/O ratio in the films. The surface observations of the deposited films showed two morphological transitions. The resistivity decreased with the growth temperature, while the nitrogen content increased. Moreover, for the highest de…
Changes in Amorphous Hydrogenated Carbon Films by Ultraviolet and Infrared Laser Irradiation
2013
Amorphous hydrogenated carbon lms were formed on the Si (100) wafers by a direct-ion beam deposition method from pure acetylene and acetylene hydrogen gas mixtures. The lms were irradiated with a nanosecond Nd:YAG laser working at the rst harmonics (λ1 = 1064 nm), the fourth harmonics (λ4 = 266 nm) or with a Nd:YVO4 laser working at the third harmonic (λ3 = 355 nm). The lms were studied by the Raman scattering, micro-Fourier transform infrared and Fourier transform infrared spectroscopies, null-ellipsometry, optical and scanning electron microscope, and Vickers hardness method. Irradiation by the wavelength λ1 = 1064 nm leads to graphitization and formation of the silicon carbide, because o…
Scanning electron microscopy analysis of defect clusters in multicrystalline solar grade silicon solar cells
2014
Solar cells from an identical commercial manufacturing unit have been investigated by electroluminescence to first detect the defect clusters. A further analysis has been done by scanning electron microscopy in secondary electron imaging mode to understand the propagation mechanism of defects. It appears that defect cluster boundaries can be very sharp or spread in the bulk with little apparent effect on the overall cell efficiency. And it is shown that grain boundaries act clearly as arrests to further propagation of these defects.
Micromoulding of three-dimensional photonic crystals on silicon substrates
2003
International audience; The growth of three-dimensional photonic crystals (PhCs) on patterned silicon substrates is reported. It is shown that deep trenches can be uniformly filled by a self-assembly of polymer microspheres, in a close-packed face-centred cubic lattice. The crystalline quality is compared for different channel widths. These observations are confirmed by optical reflectance measurements in the visible range, showing a bandwidth of enhanced reflection. The possibility to detach the PhC, i.e. to use the substrate as a mould, is also demonstrated. The potential of this approach for building PhC-based complex architectures is discussed.
High-resolution investigation of nanoparticle interaction with a model pulmonary surfactant monolayer.
2012
The pulmonary surfactant film spanning the inner alveolar surface prevents alveolar collapse during the end-exhalation and reduces the work of breathing. Nanoparticles (NPs) present in the atmosphere or nanocarriers targeted through the pulmonary route for medical purposes challenge this biological barrier. During interaction with or passage of NPs through the alveolar surfactant, the biophysical functioning of the film may be altered. However, experimental evidence showing detailed biophysical interaction of NPs with the pulmonary surfactant film are scant. In this study, we have investigated the impact of a hydrophobic polyorganosiloxane (AmOrSil20) NPs on the integrity as well as on the …