Search results for "Electron-beam"
showing 10 items of 41 documents
Fabrication and characterization of small tunnel junctions through a thin dielectric membrane
1998
We show that a small tapered hole through a thin silicon nitride membrane provides a mask for tunnel junction structures. Our experiments imply, unlike in the conventional planar electron beam lithography, that tunnel junctions are well voltage biased in this structure with vanishingly small on-chip impedance. Our technique allows fabrication of double junctions, and even multijunction linear arrays, with small metallic islands in between.
Influence of the Number of Nanoparticles on the Enhancement Properties of Surface-Enhanced Raman Scattering Active Area: Sensitivity versus Repeatabi…
2011
In the present work, the combination of chemical immobilization with electron beam lithography enables the production of sensitive and reproducible SERS-active areas composed of stochastic arrangements of gold nanoparticles. The number of nanoparticles was varied from 2 to 500. Thereby a systematic analysis of these SERS-active areas allows us to study SERS efficiency as a function of the number of nanoparticles. We found that the experimental parameters are critical, in particular the size of the SERS-active area must be comparable to the effective area of excitation to obtained reproducible SERS measurements. The sensitivity has also been studied by deducing the number of NPs that generat…
Nano-lithography using a resist, patterned by electron exposure in an AFM configuration
1996
We have used a metallised force microscope tip to apply a voltage and thereby expose a very thin resist film. It is possible to image the film surface before, during and after the exposure, without interference with the process. Uniform resist films as thin as 10 nm are fabricated using the Langmuir-Blodgett technique. To orient the defined pattern and to make electrical connections a special larger scale alignment structure is first defined by conventional electron beam lithography, either directly in the Langmuir-Blodgett resist film or in a complete first process with a separate resist system. The results from the one resist process gave conducting 50 nm lines in a 60 A thick aluminium f…
Electrogeneration of Diiodoaurate in Dimethylsulfoxide on Gold Substrate and Localized Patterning
2016
International audience; A localized etching of gold surface by scanning electrochemical microscope technique is presented where a dimethylsulfoxide-based electrolyte charged with iodine is used. The electrogenerated triiodide ion at the platinum ultramicroelectrode tip (feedback mode) acts as an oxidant for gold surface. The effects of electrode diameter and the bias time have been investigated. The approach curve method was used to hold the electrode tip close to the gold surface. A scanning electron microscope is used to observe the etched gold surfaces where disk-shaped dots are generated. The diameter of these holes depends directly on the Pt electrode diameter and the bias time.
Design, near-field characterization, and modeling of 45 circle surface-plasmon Bragg mirrors
2006
The development of surface plasmon polariton (SPP) optical elements is mandatory in order to achieve surface plasmon based photonics. A current approach to reach this goal is to take advantage of the interaction of SPP with defects and design elements obtained by the micro- or nano-structuration of the metal film. In this work, we have performed a detailed study of the performance and behavior of SPP-Bragg mirrors, designed for 45\ifmmode^\circ\else\textdegree\fi{} incidence, based on this approach. Mirrors consisting of gratings of both metal ridges on the metal surface and grooves engraved in the metal, fabricated by means of electron beam lithography and focused ion beam, have been consi…
Potential of amorphous Mo–Si–N films for nanoelectronic applications
2003
The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were deposited by co-sputtering of molybdenum and silicon targets in a gas mixture of argon and nitrogen. The atomic composition, microstructure and surface roughness were studied by RBS, TEM and AFM analyses, respectively. The electrical properties were investigated in the temperature range 80 mK to 300 K. No transition into a superconductive state was observed. Nanoscale wires were fabricated using electron beam lithography with their properties measured as a function of temperature.
Holographic recording in amorphous chalcogenide semiconductor thin films
2003
Abstract A detailed study of the amorphous As–S–Se and As2S3 films as recording media for optical holography and electron beam lithography is presented. The results of R&D on resist based on the amorphous As–S–Se thin films for manufacturing of embossed holographic labels are discussed. The holographic recording of transmission and Bragg gratings was studied.
<title>Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography</title>
2001
The photo- and electron beam induced changes in solubility of amorphous chalcogenide semiconductor As-S-Se and As2S3 thin films have been studied. The possibilities of practical application of these materials as resists for the production of relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency of the holograms.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
At-wavelength inspection of sub-40 nm defects in extreme ultraviolet lithography mask blank by photoemission electron microscopy.
2007
A new at-wavelength inspection technology to probe nanoscale defects buried underneath Mo/Si multilayers on an extreme ultraviolet (EUV) lithography mask blank has been implemented using EUV photoemission electron microscopy (EUV-PEEM). EUV-PEEM images of programmed defect structures of various lateral and vertical sizes recorded at an ~13.5 nm wavelength show that 35 nm wide and 4 nm high buried line defects are clearly detectable. The imaging technique proves to be sensitive to small phase jumps, enhancing the edge visibility of the phase defects, which is explained in terms of a standing wave enhanced image contrast at resonant EUV illumination.
Exploring 10 Gb/s transmissions in Titanium dioxide based waveguides at 1.55 pm and 2.0 pm
2017
Exploring new spectral bands for optical transmission is one of the solutions to support the increasingly demand of data traffic. The recent development of dedicated hollow-core photonic bandgap fibers [1], associated to the emergence of thulium doped fiber amplifiers [2] has recently focused the attention further in the infrared, and more specifically around 2 μm. Regarding integrated photonics, it becomes therefore interesting to find a suitable platform to operate at 2 μm as well as in the other more conventional spectral bands (going from 800 nm to 1550 nm). Here, we propose titanium dioxide (TiO 2 ) as a good candidate for integrated waveguide photonics and demonstrate, for the first t…