Search results for "Epitaxy"

showing 10 items of 287 documents

Magneto-optical characterization of single crystalline Co2FeAl0.4Si0.6thin films on MgO(1 0 0) substrates with Cr and MgO seed layers

2013

We report on the experimental investigation of the influence of a seed layer on the magnetic properties of the full-Heusler alloy Co2FeAl0.4Si0.6 (CFAS). The studied magnetic films are grown epitaxially on MgO (1 0 0) substrates with Cr and/or MgO seed layers. By employing magneto-optical Kerr effect magnetometry we show that magnetic anisotropy can be tuned by choosing the proper seed layer. The results on CFAS show an overall uniaxial anisotropy plus a biaxial contribution which depends on the seed layer. In addition, if grown on MgO, a sharp increase in the coercive field HC at a series of angles symmetric with respect to the easy axis is present. Scanning Kerr-microscope imaging is perf…

Materials scienceKerr effectAcoustics and UltrasonicsCondensed matter physicsMagnetic domainMagnetometerCoercivityCondensed Matter PhysicsEpitaxySurfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionMagnetic anisotropyCrystallographylawThin filmAnisotropyJournal of Physics D: Applied Physics
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Gallium nitride thin films as processed by several techniques: Their possible applications for PV-devices

2011

We present in this work the characterization studies carried on GaN — thin films as processed by the Close Spaced Vapor Technique (CSVT), Laser Ablation (LA), and Molecular Beam Epitaxy (MBE), under particular growth parameters for each of the three techniques. The films characterization was performed by x-ray diffraction (X-RD), Photoluminescence (PL), Raman spectroscopy, optical transmission, energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). With these results an analysis of the samples was done, with an aim for a possible application of these thin films for PV-devices.

Materials scienceLaser ablationScanning electron microscopeEnergy-dispersive X-ray spectroscopyAnalytical chemistryGallium nitridesymbols.namesakechemistry.chemical_compoundchemistrysymbolsThin filmRaman spectroscopyHigh-resolution transmission electron microscopyMolecular beam epitaxy2011 37th IEEE Photovoltaic Specialists Conference
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Structural, electronic, and magnetic properties of pseudomorphic CrFe nanostripes on W(110)

2007

We have grown pseudomorphic binary ${\mathrm{Cr}}_{1\ensuremath{-}x}{\mathrm{Fe}}_{x}$ alloy monolayers and sequences of Cr and Fe nanostripes on W(110) by molecular-beam epitaxy in ultrahigh vacuum. By coadsorption of Cr and Fe a pseudomorphic random CrFe alloy grows on the W(110) substrate. At a substrate temperature of $700\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ the CrFe alloy forms monolayer stripes in the step flow growth mode. We have measured magnetic properties of the monolayer alloy for $0.75\ensuremath{\leqslant}x\ensuremath{\leqslant}1$ using Kerr magnetometry. At a constant relative temperature $t=T∕{T}_{C}$ the saturation value of the Kerr rotation shows a maximum at $x=0.95$ an…

Materials scienceLocal density of statesCondensed matter physicsFermi levelScanning tunneling spectroscopySpin valveSubstrate (electronics)Condensed Matter PhysicsEpitaxyElectronic Optical and Magnetic Materialssymbols.namesakesymbolsSaturation (graph theory)Curie temperaturePhysical Review B
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Magnetotransport properties of epitaxial - and -oriented CeSb thin films

2000

Abstract We present the electronic magnetotransport properties of (1 0 0) - and (1 1 1) -oriented CeSb thin films. The samples were grown epitaxially by molecular beam epitaxy onto sapphire (1 1 2 0) and (0 0 0 1) substrates. The temperature-dependent resistivity is in full correspondence with the behaviour known from bulk material. For (1 0 0) -oriented films the analysis of the temperature and magnetic field-dependent magnetoresistivity results in a H/T phase diagram analogous to that of bulk samples. For (1 1 1) -oriented films slight deviations were observed. In Hall-effect measurements of (1 0 0) -oriented samples a sign change of the Hall coefficient occurred which is in contrast to m…

Materials scienceMagnetic momentCondensed matter physicsHall effectElectrical resistivity and conductivitySapphireElectrical and Electronic EngineeringThin filmCondensed Matter PhysicsEpitaxyElectronic Optical and Magnetic MaterialsMolecular beam epitaxyPhase diagramPhysica B: Condensed Matter
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Oxygen on Fe(110): magnetic properties of the adsorbate system

1999

Abstract Investigations concerning the electronic and magnetic properties of oxygen adsorbed on magnetized iron films were carried out by means of angle and spin resolving photoelectron spectroscopy. Iron(1 1 0), epitaxially grown on a W(1 1 0) crystal, served as the ferromagnetic substrate. Exchange splittings of the O 2p x derived level were detected demonstrating a magnetic coupling between the chemisorbate and the iron layer. This observation indicates the presence of an induced magnetic moment within the adsorbate overlayer. Variations of the exchange splitting occurred as a function of the oxygen coverage, energy of the exciting radiation, and detection angle of the emitted photoelect…

Materials scienceMagnetic momentIron oxidechemistry.chemical_elementCondensed Matter PhysicsEpitaxyMolecular physicsOxygenElectronic Optical and Magnetic MaterialsOverlayerCondensed Matter::Materials Sciencechemistry.chemical_compoundNuclear magnetic resonancechemistryFerromagnetismChemisorptionAntiferromagnetismJournal of Magnetism and Magnetic Materials
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Structural and Magnetic Properties of Epitaxial Ni<sub>2</sub>MnGa Thin Films

2009

We report on the preparation and investigation of epitaxial thin films of the magnetic shape memory alloy Ni2MnGa. For samples close to the stoichiometric composition we find that the phase transformation temperature is affected by the crystallographic orientation. Changes in the crystal structure due to the transformation are observed using temperature-dependent X-ray diffraction. Films with higher manganese content are in the martensitic state at room temperature. Those samples on Al2O3(11-20) reveal the 7-layered orthorhombic structure that allows strains up to 10 %. To avoid blocking of magnetostrictive effects by the substrate, free-standing films are prepared using water-soluble NaCl(…

Materials scienceMechanical EngineeringSubstrate (electronics)Crystal structureCondensed Matter PhysicsEpitaxyCrystallographyMagnetic shape-memory alloyMechanics of MaterialsDiffusionless transformationPhase (matter)General Materials ScienceOrthorhombic crystal systemThin filmMaterials Science Forum
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SEM and XPS studies of titanium dioxide thin films grown by MOCVD

1998

Abstract The metal organic chemical vapour deposition (MOCVD) method was used to prepare titanium dioxide thin films. Thin films of TiO2, about 100 nm thick, were deposited on (100)Si and (1102)Al2O3 sapphire substrates using titanium isopropoxide (Ti(OC3H7)4) as metal organic precursor. The morphology of the films and the presence of impurities on the thin films surfaces were studied using respectively, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The influence of the growth parameters such as the deposition temperature, the carrier gas (nitrogen) flow rate and the presence of an additional oxygen flow on the characteristics of the titanium dioxide films h…

Materials scienceMetals and AlloysMineralogySurfaces and InterfacesChemical vapor depositionSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsTitanium oxidechemistry.chemical_compoundCarbon filmchemistryX-ray photoelectron spectroscopyChemical engineeringTitanium dioxideMaterials ChemistryMetalorganic vapour phase epitaxyThin filmTitanium isopropoxideThin Solid Films
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Characterization of Crystalline Structure and Morphology of Ga<sub>2</sub>O<sub>3</sub> Thin Film Grown by MOCVD Technique

2016

Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.

Materials scienceMorphology (linguistics)Mechanical EngineeringAnalytical chemistrychemistry.chemical_element02 engineering and technologyCrystal structure010402 general chemistry021001 nanoscience & nanotechnology01 natural sciencesOxygen0104 chemical scienceschemistry.chemical_compoundchemistryMechanics of MaterialsGeneral Materials ScienceCrystalliteMetalorganic vapour phase epitaxyTrimethylgalliumThin film0210 nano-technologyLuminescenceKey Engineering Materials
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In Situ Heating TEM Study of Onion-like WS2 and MoS2 Nanostructures Obtained via MOCVD

2007

We report on the in situ heating transmission electron microscopy (TEM) study of WS2 and MoS2 nanoparticles obtained from metal–organic chemical vapor deposition (MOCVD). The general behavior of MoS2 and WS2 is similar: Round, amorphous particles in the pristine sample transform to hollow, onion-like particles upon annealing. A second type of particle with straight layers exhibits only minor changes. A significant difference between both compounds could be demonstrated in their crystallization behavior. The results of the in situ heating experiments are compared to those obtained from an ex situ annealing process under Ar.

Materials scienceNanostructureAnnealing (metallurgy)General Chemical EngineeringNanoparticleNanotechnologyGeneral ChemistryChemical vapor depositionAmorphous solidlaw.inventionChemical engineeringTransmission electron microscopylawMaterials ChemistryMetalorganic vapour phase epitaxyCrystallizationChemistry of Materials
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ZnO and Related Materials

2019

Materials scienceNanostructureNanotechnologyCrystal growthMetalorganic vapour phase epitaxyMetalorganic Vapor Phase Epitaxy (MOVPE)
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