Search results for "Epitaxy"
showing 10 items of 287 documents
Superficial oxidation of molybdenum at high pressure and low temperature: RHEED and AES analyses of the molybdenum oxide formation
1991
Abstract Numerous studies relate to the interaction of the molybdenum surface with oxygen at low pressure and high temperature. They give results about oxygen chemisorption, surface facetting and the epitaxial formation of MoO 2 crystallites. This work deals with the interaction of Mo(100), Mo(110) and Mo(111) surfaces with oxygen at high pressure (10 4 Pa) and low temperature (620–820 K). RHEED and AES analyses results prove that, in these oxidation conditions: MoO 2 and non-stoichiometric molybdenum oxide such as Mo 4 O 11 are not evidenced in any of the molybdenum oxidation steps. The MoO 3 phase nucleates directly from any Mo surface. The structure and orientation of MoO 3 nuclei are ch…
Interaction of oxygen with Mo(100), Mo(110), and Mo(111) surfaces. RHEED and AES analyses of the molybdenum oxide nucleation and growth
1991
Abstract A study of the nucleation and growth of MoO 3 generated by interaction of oxygen with Mo(100), Mo(110), and Mo(111) single crystalline surfaces is investigated at high oxygen pressure (10 4 Pa) and low temperature (620 to 820 K). The results of RHEED and AES analyses prove that under these oxidation conditions, MoO 3 nucleates directly from the metal without intermediate formation of MoO 2 or nonstoichiometric molybdenum oxide such as Mo 4 O 11 . The structure and orientation of MoO 3 nuclei are characterized in relation with the parent molybdenum surface. On the Mo(110) and Mo(111) surfaces, which are faceting, the nucleation and growth of MoO 3 takes place by successive structura…
Morphology and magnetoresistance of Co2Cr0.6Fe0.4Al-based tunnelling junctions
2009
Some ferromagnetic Heusler compounds are theoretically predicted to be half metallic materials, i.e. to be characterized by a huge spin polarization at the Fermi energy. We investigate the correlations between junction preparation conditions, morphology and transport properties of planar MgO/Co2Cr0.6Fe0.4Al/AlOx/Co/CoOx/Pt tunnelling junctions. Epitaxial Co2Cr0.6Fe0.4Al thin films were deposited by dc and rf magnetron sputtering on different buffer layers (Cr, Fe, MgO) on MgO(1 0 0) substrates. By RHEED, LEED and in situ STM investigations different surface morphologies were observed. Atomically flat surfaces with Co2Cr0.6Fe0.4Al unit cell sized steps (B2 structure) were obtained by rf sput…
Ex situ investigations of MOCVD-grown gallium nitride nanowires using reflection high energy electron diffraction
2011
Vertically oriented nanowires (NWs) of single-crystalline wurtzite GaN have been fabricated on sapphire substrates, via metal organic chemical vapor deposition (MOCVD). We present ex situ investigations on orientation and structure of grown GaN nanowires on GaN(0001) surface using reflection high energy electron diffraction (RHEED). Both ordered and randomly oriented GaN crystalline structures have been detected.
Optical and structural studies of GaN 3D structures selectively grown by MOCVD
2004
Abstract This paper presents preliminary results on the selective growth of three-dimensional (3D) micrometric metallic structures by the MOCVD technique. The 3D structure growth occurs by simply feeding the reactor gas phase with a conventional flow of metal-organic (MO), trimethyl-gallium (TMGa) molecules. Selectivity occurs at the substrate surface in which MO species travel tens of micrometers in order to build up the 3D structure. After the growth, these structures are nitrided in order to give GaN-related optical visible emission. Optical emission results are presented and discussed in this paper. Both 3D structures deposition and annealing experiments can be extended to other III–V m…
Heterogeneous nucleation of colloidal melts under the influence of shearing fields
2004
Large, oriented single crystals may be obtained from shear melts of colloidal particles after nucleation at the container walls. We are here interested in the processes occurring during the initial phase of their formation. Using different microscopic and scattering techniques we here studied highly charged suspensions of spherical particles, dispersed in low salt or deionized water, in single and double wall confinement, during and after cessation of shear. While the equilibrium phase of our colloidal solids is body centred cubic, the shear induced precursors of heterogeneous nuclei consist of wall based, oriented, registered or freely sliding layers with in plane hexagonal symmetry. Cessa…
Molecular dynamics simulation of epitaxial growth of the Si(001) surface
1988
Abstract Molecular beam epitaxy on a Si(100) substrate has been studied using a molecular dynamics method with the Stillinger-Weber model potential. At high substrate temperature, 800 K, well ordered crystalline layers are found to grow underneath an amorphous overlayer of approximately 5 A thick. A limiting temperature for epitaxial growth is found to be 480 K, below which the growth does not produce ordered layers. When the sample deposited below 480 K is heated up to 800 K and the deposition is started again the original adatoms start to form ordered atomic layers. Thus the collisions of the deposited atoms in addition to the substrate temperature seem to play an essential role in the gr…
Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films
2008
Solid phase epitaxial regrowth (SPER) of p -doped preamorphized Si was studied by time resolved reflectivity. Strain and dopant concentration were opportunely varied by implanting neutral (Ge) and isovalent (B, Ga) impurities in order to disentangle the two different effects on SPER. Larger SPER rate variations occurred in strained doped Si with respect to undoped samples. The generalized Fermi level shifting model was implemented to include the role of the strain and to fit the experimental data over a large range of temperature for p - and n -type doping. We introduced a charged defect, whose energy level is independent of the dopant species. © 2008 American Institute of Physics.
Solar blind detectors based on AlGaN grown on sapphire
2005
Solar blind detectors have been fabricated based on AlGaN heterostructures grown on sapphire by molecular beam epitaxy or chemical vapour deposition. MSM and Schottky detectors were investigated. High performance devices have been obtained thanks to an optimization of the material crystalline quality (including the suppression of cracks) and of the process. We show that the spectral limitations of MSM detectors are dictated by intrinsic phenomena that are analysed in details while the responsivity and detectivity also depends on the technological process with a special emphasis on the geometry of finger and contact pads. One and two dimensional arrays have been fabricated and preliminary re…
Isolated self-assembled InAs/InP(001) quantum wires obtained by controlling the growth front evolution
2007
6 páginas, 5 figuras. In this work we explore the first stages of quantum wire (QWR) formation studying the evolution of the growth front for InAs coverages below the critical thickness, θc, determined by reflection high energy electron diffraction (RHEED). Our results obtained by in situ measurement of the accumulated stress evolution during InAs growth on InP(001) show that the relaxation process starts at a certain InAs coverage θRθR this ensemble of isolated nanostructures progressively evolves towards QWRs that cover the whole surface for θ = θc. These results allow for a better understanding of the self-assembling process of QWRs and enable the study of the individual properties of In…