Search results for "GALLIUM"

showing 10 items of 265 documents

Temperature dependence of the E2h phonon mode of wurtzite GaN/AlN quantum dots

2008

Raman scattering has been used to study the temperature dependence of the frequency and linewidth of the E2h phonon mode of GaN/AlN quantum dot stacks grown on 6H-SiC. The evolution of the nonpolar phonon mode was analyzed in the temperature range from 80 to 655 K for both quantum dots and barrier materials. The experimental results are interpreted by comparison with a model that takes into account symmetric phonon decay and the different thermal expansions of the constituents of the heterostructure. We find a small increase in the anharmonic parameters of the phonon modes in the heterostructure with respect to bulk. jorbumar@alumni.uv.es Alberto.Garcia@uv.es Ana.Cros@uv.es

III-V semiconductorsMaterials scienceCondensed matter physicsPhononUNESCO::FÍSICAGallium compoundsGeneral Physics and AstronomyHeterojunctionAluminium compounds ; Gallium compounds ; III-V semiconductors ; Phonons ; Raman spectra ; Semiconductor quantum dots ; Thermal expansionAtmospheric temperature rangeCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter::Materials Sciencesymbols.namesakeLaser linewidth:FÍSICA [UNESCO]Quantum dotsymbolsPhononsSemiconductor quantum dotsRaman spectraThermal expansionRaman spectroscopyAluminium compoundsRaman scatteringWurtzite crystal structureJournal of Applied Physics
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Oscillator strength reduction induced by external electric fields in self-assembled quantum dots and rings

2007

We have carried out continuous wave and time resolved photoluminescence experiments in self-assembled In(Ga)As quantum dots and quantum rings embedded in field effect structure devices. In both kinds of nanostructures, we find a noticeable increase of the exciton radiative lifetime with the external voltage bias that must be attributed to the field-induced polarizability of the confined electron hole pair. The interplay between the exciton radiative recombination and the electronic carrier tunneling in the presence of a stationary electric field is therefore investigated and compared with a numerical calculation based on the effective mass approximation.

III-V semiconductorsOscillator strengthRadiative lifetimesTime resolved spectraTunnellingSelf assembledCondensed Matter::Materials ScienceGallium arsenideIndium compoundsElectric fieldQuantum mechanicsSemiconductor quantum dotsNetwork of excellenceEuropean commissionPhotoluminescenceQuantum tunnellingPhysicsSelf-assemblyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsQuantum dotEffective massElectron hole recombinationElectron-hole recombinationPhysical Review B
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Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells

1998

9 páginas, 11 figuras.

III-V semiconductorsPhotoluminescenceMaterials scienceBand gapExcitonAlloyGeneral Physics and Astronomyengineering.materialGallium arsenideSpectral line broadeningchemistry.chemical_compoundCondensed Matter::Materials ScienceGallium arsenideIndium compounds:FÍSICA [UNESCO]Optical constantsInterface structureFluctuationsSemiconductor quantum wellsPhotoluminescenceQuantum wellCondensed matter physicsCondensed Matter::OtherGallium compoundsUNESCO::FÍSICAHeterojunctionInterface statesCondensed Matter::Mesoscopic Systems and Quantum Hall EffectStoichiometryEnergy gapchemistryIndium compounds ; Gallium compounds ; III-V semiconductors ; Gallium arsenide ; Semiconductor quantum wells ; Interface structure ; Photoluminescence ; Excitons ; Interface states ; Fluctuations ; Stoichiometry ; Spectral line broadening ; Energy gap ; Optical constantsengineeringExcitonsMolecular beam epitaxy
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X-ray Absorption Study of Gallium Arsenide at the Ga and As K-edges

1993

We present X-ray absorption study of gallium arsenide at the Ga and As K-edges. The analysis of the X-ray absorption fine structure was done in the framework of the multiple-scattering theory. Both XANES and EXAFS regions are considered. The calculated signals are in very good agreement with experimental data. It is shown that for both edges multiple-scattering contributions are negligible for wavevector values greater than 3 Å-1, and single-scattering analysis can be used without significant loss of accuracy in that region.

ImaginationExtended X-ray absorption fine structureChemistrymedia_common.quotation_subjectGeneral EngineeringX-rayAnalytical chemistryGeneral Physics and AstronomyMolecular physicsXANESGallium arsenidechemistry.chemical_compoundWave vectorAbsorption (electromagnetic radiation)media_commonJapanese Journal of Applied Physics
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Slow and Fast Singlet Energy Transfers in BODIPY-gallium(III)corrole Dyads Linked by Flexible Chains

2014

Red (no styryl), green (monostyryl), and blue (distyryl) BODIPY-gallium(III) (BODIPY = boron-dipyrromethene) corrole dyads have been prepared in high yields using click chemistry, and their photophysical properties are reported. An original and efficient control of the direction of the singlet energy transfers is reported, going either from BODIPY to the gallium-corrole units or from gallium-corroles to BODIPY, depending upon the nature of the substitution on BODIPY. In one case (green), both directions are possible. The mechanism for the energy transfers is interpreted by means of through-space Förster resonance energy transfer (FRET).

Inorganic Chemistrychemistry.chemical_compoundFörster resonance energy transferChemistryEnergy transferClick chemistrychemistry.chemical_elementSinglet statePhysical and Theoretical ChemistryBODIPYGalliumCorrolePhotochemistryInorganic Chemistry
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Solar blind AlGaN photodetectors with a very high spectral selectivity

2006

Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 x 10(4), and better than 5 x 10(4), measured between 280 and 320 nm, are achieved in Metal Semiconductor Metal detectors and Schottky diodes respectively. The whole detector process is fully compatible with low cost array fabrication.

Interference filterMaterials scienceFLAME DETECTIONbusiness.industryDetectorPhotodetectorsPHOTODIODESPhotodetectorSchottky diodeultraviolet photodetectorsHeterojunctionGallium nitrideSemiconductor deviceCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsPhotodiodelaw.inventionOpticslawOptoelectronicsDETECTIVITYbusinessInstrumentationMolecular beam epitaxy
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First Results of the Testing of the Liquid Gallium Jet Limiter Concept for ISTTOK

2006

The use of liquid metals as plasma facing components in tokamaks has recently experienced a renewed interest stimulated by their advantages to the development of a fusion reactor. Liquid metals have been proposed to solve problems related to the erosion and neutronic activation of solid walls submitted to high power loads allowing an efficient heat exhaustion from fusion devices. Presently the most promising materials are Lithium and Gallium. ISTTOK, a small size tokamak, will be used to test the behavior of a liquid Gallium jet in the vacuum chamber and its influence on the plasma. This paper presents a description of the conceived setup as well as experimental results. The liquid Gallium …

Jet (fluid)Liquid metalMaterials scienceNuclear engineeringHydrostatic pressureAnalytical chemistrychemistry.chemical_elementFusion powerPhysics::Fluid DynamicschemistryPhysics::Plasma PhysicsLimiterVacuum chamberGalliumISTTOKAIP Conference Proceedings
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Interaction of a liquid gallium jet with the tokamak ISTTOK edge plasma

2008

Abstract The interaction of a liquid gallium jet with plasma has been investigated in the tokamak ISTTOK. This paper presents a description of the conceived experimental setup, a detailed characterization of the produced jets and the first experimental results related to the gallium–plasma interaction. A stable jet has been obtained, which was not noticeably affected by magnetic field transients. ISTTOK has been successfully operated with the gallium jet without degradation of the discharge or a significant plasma contamination by liquid metal. This observation is supported by spectroscopic measurements showing that gallium radiation is limited to the region around the jet. Furthermore, the…

Jet (fluid)Liquid metalTokamakMaterials scienceAstrophysics::High Energy Astrophysical PhenomenaMechanical Engineeringchemistry.chemical_elementPlasmaFusion powerlaw.inventionPhysics::Fluid DynamicsNuclear magnetic resonanceNuclear Energy and EngineeringchemistryPhysics::Plasma PhysicslawLimiterHigh Energy Physics::ExperimentGeneral Materials ScienceGalliumAtomic physicsISTTOKCivil and Structural EngineeringFusion Engineering and Design
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Anomální Ramanovy módy v teluridech

2021

[EN] Two anomalous broad bands are usually found in the Raman spectrum of bulk and 2D Te-based chalcogenides, which include binary compounds, like ZnTe, CdTe, HgTe, GaTe, GeTe, SnTe, PbTe, GeTe2, As2Te3, Sb2Te3, Bi2Te3, NiTe2, IrTe2, and TiTe2, as well as ternary compounds, like GaGeTe, SnSb2Te4, SnBi2Te4, and GeSb2Te5. Many different explanations have been proposed in the literature for the origin of the anomalous broad bands in tellurides, usually located between 119 and 145 cm(-1). They have been attributed to the intrinsic Raman modes of the sample, to oxidation of the sample, to the folding of Brillouin-edge modes onto the zone center, to the existence of a double resonance, like that …

Lattice-DynamicsMaterials sciencetrigonal SeFOS: Physical sciencesGalliumTelluride Trigonal Se02 engineering and technology010402 general chemistry01 natural scienceslaw.inventiontelurScatteringsymbols.namesakelawSpectrumMaterials ChemistryPressureLaser power scalingTeFilmsCondensed Matter - Materials ScienceCondensed matter physicstlakGraphenemřížková dynamikaspektrumResonanceMaterials Science (cond-mat.mtrl-sci)General Chemistryfonony021001 nanoscience & nanotechnologygallium tellurideCadmium telluride photovoltaics0104 chemical sciencesCharacterization (materials science)Condensed Matter - Other Condensed Matterselen s trigonální mřížkouFISICA APLICADAsymbolsPhononstloušťka0210 nano-technologyTernary operationRaman spectroscopyThicknessRaman scatteringOther Condensed Matter (cond-mat.other)
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Interaction of a Liquid Gallium Jet with ISTTOK Edge Plasmas

2008

The use of liquid metals as plasma facing components in tokamaks has recently experienced a renewed interest stimulated by their advantages in the development of a fusion reactor. Liquid metals have been proposed to solve problems related to the erosion and neutronic activation of solid walls submitted to high power loads allowing an efficient heat exhaust from fusion devices. Presently the most promising candidate materials are lithium and gallium. However, lithium has a short liquid state range when compared, for example, with gallium that has essentially better thermal properties and lower vapor pressure. To explore further these properties, ISTTOK tokamak is being used to test the inter…

Liquid metalJet (fluid)TokamakChemistryNuclear engineeringHydrostatic pressurechemistry.chemical_elementPlasmaFusion powerlaw.inventionlawGalliumAtomic physicsISTTOKAIP Conference Proceedings
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