Search results for "Gallium arsenide"
showing 10 items of 38 documents
Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates
2011
3 figuras, 3 páginas.
Noise Enhanced Stability Phenomenon in Electron Spin Dynamics
2012
Possible utilization of the electron spin as an information carrier in electronic devices is an engaging challenge for future spin-based electronics. In these new devices, the information stored in a system of polarized electron spins, is transferred by applying an external electric field and finally detected. However, each initial non-equilibrium magnetization decays both in time and distance during the transport. Because of increasing miniaturization, to avoid too much intense electric fields, which could lead the system to exhibit a strongly nonlinear physical behavior, applied voltages are very low. Low voltages are subjected to the background noise; hence, it is mandatory to understand…
Consequences of the spatial localization on the exciton recombination dynamics in InGaP/GaAs heterostructures
2002
5 páginas, 4 figuras.
Growth and optical characterization of indirect-gap AlxGa1−xAs alloys
1999
Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…
Optical characterization of individual GaAs quantum dots grown with height control technique
2013
We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control. © 2013 AIP Publishing LLC.
Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots
2002
6 páginas, 3 figuras.
Single photon emission from impurity centers in AlGaAs epilayers on Ge and Si substrates
2012
We show that the epitaxial growth of thin layers of AlGaAs on Ge and Si substrates allows to obtain single photon sources by exploiting the sparse and unintentional contamination with acceptors of the AlGaAs. Very bright and sharp single photoluminescence lines are observed in confocal microscopy. These lines behave very much as single excitons in quantum dots, but their implementation is by far much easier, since it does not require 3D nucleation. The photon antibunching is demonstrated by time resolved Hanbury Brown and Twiss measurements.
Reducing the contribution of the photoemission process to the unwanted beam in photoelectron sources at accelerators
2017
Negative electron affinity (NEA) GaAs photocathodes show different pulse responses depending on the wavelength of photoexcitation. The pulse response at 800 nm shows a long and relatively intense tail, whereas at 400 nm, a tail of similar shape but with an intensity lower by around two orders of magnitude is observed. We explain this behavior with the specific properties of NEA photocathodes and compare it with the response of a positive electron affinity photocathode.
Frequency influence on the hot-electron noise reduction in GaAs operating under periodic signals
2008
A Monte Carlo study of the role of the frequency on the hot-electron intrinsic noise reduction in an n-type GaAs bulk driven by two mixed cyclostationary electric fields is presented. Previous numerical results showed the possibility to reduce the diffusion noise under specific wave-mixing conditions. In this work the variations of the noise properties are investigated by computing and integrating the spectral density of the velocity fluctuations. We found that the effect of reduction of the noise level due to the addition of a second field at twice frequency is almost independent of the frequency.
Hot electron noise in n-type GaAs in crossed electric and magnetic fields
2006
A Monte Carlo analysis of hot electron transport properties of bulk \textit{n}-type GaAs in crossed electric and magnetic fields is presented. %Magnetic field strengths allowing negligible quantum effects in the electron dynamics during free flights are considered. Effects due to the nonparabolicity of bands are properly taken into account by means of a local parabolic approximation. Stochastic properties of electron transport are analyzed by computing the velocity auto-correlation function and the spectral density of fluctuations. It is shown how the presence of the magnetic field is able to deeply modify electron noise up to high electric field strengths. The resulting features of the vel…