Search results for "Gallium"

showing 10 items of 265 documents

Internal photoemission in solar blind AlGaN Schottky barrier photodiodes

2005

We have analyzed the photoresponse of solar blind AlGaN Schottky barrier photodiodes below the alloy band gap energy, in the 3.5-4.5 eV range, and we show that it is dominated by internal photoemission. The n-type Schottky barrier height is shown to increase linearly with the band gap energy of the AlGaN alloy. The amplitude of the internal photoemission signal is about 20 times smaller than the value given by the Fowler theory based on a free electron model. We explain this result by taking into account the interband transitions and the ballistic transport of photoexcited electrons in the metal. This low value of internal photoemission allows us to achieve a spectral rejection ratio betwee…

Free electron modelMaterials scienceFLAME DETECTIONPhysics and Astronomy (miscellaneous)business.industryBand gapSchottky barrierInverse photoemission spectroscopyPhotodetectorsWide-bandgap semiconductorSchottky diodeultraviolet photodetectorsGallium nitridePERFORMANCEFILMSPhotodiodelaw.inventionHEIGHTlawBallistic conductionOptoelectronicsHOT-ELECTRONSbusinessApplied Physics Letters
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Synthesis of Silver Gallium Selenide (AgGaSe2) Nanotubes and Nanowires by Template-Based Electrodeposition

2020

In this work, a systematic investigation of the different parameters that control the electrodeposition processes was carried out at the aim to synthetizing AgGaSe₂ nanostructures. We found that pH is a key parameter to control both the morphology and composition of the nanostructures. Low pH favours mainly the formation of Ag2Se nanotubes with a scarce mechanical stability, while multi-phase nanowires well anchored to the substrate were obtained at higher pH. We also found that it was necessary to increase dramatically the concentration of the gallium precursor into the deposition bath in order to obtain AgGaSe₂ owing to lower redox potential of the Ga3+/Ga couple than Ag2+/Ag and Se4+/Se.…

Ga ElectrodepositionMorphology (linguistics)NanostructureMaterials scienceBiomedical EngineeringNanowirechemistry.chemical_elementBioengineeringGeneral ChemistrySubstrate (electronics)Condensed Matter PhysicsRedoxTemplate ElectrosynthesiAmorphous solidNanowireNanotubeSettore ING-IND/23 - Chimica Fisica ApplicataChemical engineeringchemistryAgGaSe2General Materials ScienceGalliumDeposition (law)Journal of Nanoscience and Nanotechnology
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Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

2013

The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device. © 2013 AIP Publishing LLC.

GaAs Molecular Beam Epitaxy quantum nanostructures photoluminescenceMaterials sciencePhotoluminescencePhotonbusiness.industryQuantum dotsGeneral Physics and AstronomySemiconductorPolarization (waves)Gallium arsenidechemistry.chemical_compoundSemiconductorchemistryQuantum dotOptoelectronicsbusinessBiexcitonSingle photonsMolecular beam epitaxy
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Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

2006

We report on a dramatic improvement of the optical and structural properties of AlN/GaN multiple quantum wells (MQWs) grown by metal-organic vapor-phase epitaxy using indium as a surfactant. This improvement is observed using photoluminescence as well as x-ray diffraction. Atomic force microscopy shows different surface morphologies between samples grown with and without In. This is ascribed to a modified relaxation mechanism induced by different surface kinetics. These improved MQWs exhibit intersubband absorption at short wavelength (2 mu m). The absorption linewidth is as low as 65 meV and the absorption coefficient is increased by 85%.

GaN/AlN quantumMaterials sciencePhotoluminescencePhysics and Astronomy (miscellaneous)business.industrySUPERLATTICESSuperlatticeMULTIPLE-QUANTUM WELLSMU-Mchemistry.chemical_elementquantum dotsHeterojunctionRELAXATIONGallium nitrideEpitaxyLAYERSGANchemistryQuantum dotOptoelectronicsbusinessAbsorption (electromagnetic radiation)Quantum wellIndium
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Mid-infrared intersubband absorption in lattice-matched AlInN/GaN multiple-quantum wells

2005

We report the observation of midinfrared intersubband (ISB) absorption in nearly lattice-matched AlInNGaN multiple-quantum-wells. A clear absorption peak is observed around 3 μm involving transitions from the conduction band ground state to the first excited state. In addition to ISB absorption, photoluminescence experiments were carried out on lattice- matched AlInNGaN single quantum wells in order to determine the spontaneous polarization discontinuity between GaN and Al0.82 In0.18 N compounds. The experimental value is in good agreement with theoretical predictions. Our results demonstrate that the AlInNGaN system is very promising to achieve crack-free and low dislocation density struct…

GaN/AlN quantumPhotoluminescenceMaterials sciencePhysics and Astronomy (miscellaneous)Condensed matter physicsWide-bandgap semiconductorGallium nitridequantum dotsGallium nitrideMolecular physicsCondensed Matter::Materials Sciencechemistry.chemical_compoundchemistryQuantum dotExcited stateGround stateQuantum wellMolecular beam epitaxy
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68Ge/68Ga Generators: Past, Present, and Future

2012

In 1964, first (68)Ge/(68)Ga radionuclide generators were described. Although the generator design was by far not adequate to our today's level of chemical, radiopharmaceutical and medical expectations, it perfectly met the needs of molecular imaging of this period. (68)Ga-EDTA as directly eluted from the generators entered the field of functional diagnosis, in particular for brain imaging. A new type of generators became commercially available in the first years of the 21st century. Generator eluates based on hydrochloric acid provided "cationic" (68)Ga instead of "inert" (68)Ga-complexes and opened new pathways of Me(III) based radiopharmaceutical chemistry. The impressive success of util…

Gallium RadioisotopesGenerator (computer programming)lawbusiness.industryElectrical engineeringElectric generatorRadionuclide Generatorbusinesslaw.invention
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Characterization of crystalline structure and morphology of Ga2O3 thin film grown by MOCVD technique

2017

Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.

Gallium oxideSapphireCrystal structureMOCVD:NATURAL SCIENCES:Physics [Research Subject Categories]WaterTrimethylgallium
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EXCITONS, LOCALIZED STATES IN SILICON DIOXIDE AND RELATED CRYSTALS AND GLASSES

2000

The excitons, localized states in crystalline and glassy silicon dioxide, germanium dioxide were studied by photoluminescent and photoelectric experimental methods. Results were compared with analogous investigations of related crystals, such as aluminum and gallium orthophosphates, and of related glasses, such as silica, sodium silicates, germanates, lead and phosphates glasses. Special attention was made to the influence of oxygen deficiency on localized states of glasses, in general, and to the nature of the 7.6 eV band in reduced silica, in particular.

Germanium dioxidePhotoluminescenceMaterials sciencebusiness.industrySilicon dioxideExcitonchemistry.chemical_elementOxygen deficiencyPhotoelectric effectchemistry.chemical_compoundchemistryAluminiumOptoelectronicsPhysical chemistryGalliumbusiness
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(R)-NODAGA-PSMA: A Versatile Precursor for Radiometal Labeling and Nuclear Imaging of PSMA-Positive Tumors

2015

Purpose The present study aims at developing and evaluating an urea-based prostate specific membrane antigen (PSMA) inhibitor suitable for labeling with 111In for SPECT and intraoperative applications as well as 68Ga and 64Cu for PET imaging. Methods The PSMA-based inhibitor-lysine-urea-glutamate-coupled to the spacer Phe-Phe-D-Lys(suberoyl) and functionalized with the enantiomerically pure prochelator (R)-1-(1-carboxy-3-carbotertbutoxypropyl)-4,7-carbotartbutoxymethyl)-1,4,7-triazacyclononane ((R)-NODAGA(tBu)3), to obtain (R)-NODAGA-Phe-Phe-D-Lys(suberoyl)-Lys-urea-Glu (CC34). CC34 was labeled with 111In, 68Ga and 64Cu. The radioconjugates were further evaluated in vitro and in vivo in LNC…

Glutamate Carboxypeptidase IIMaleBiodistributionPathologymedicine.medical_specialtylcsh:MedicineGallium RadioisotopesAcetatesurologic and male genital diseasesHeterocyclic Compounds 1-RingMicechemistry.chemical_compoundPharmacokineticsIn vivoLNCaPImage Processing Computer-AssistedTumor Cells CulturedGlutamate carboxypeptidase IImedicineAnimalsHumansTissue Distributionlcsh:ScienceIncubationMice Inbred BALB CMultidisciplinaryChemistrylcsh:RProstatic NeoplasmsXenograft Model Antitumor AssaysMolecular biologyIn vitroPositron-Emission TomographyAntigens SurfaceUreaFemalelcsh:QRadiopharmaceuticalsResearch ArticlePLOS ONE
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Laser spectroscopy of gallium isotopes beyond N = 50

2012

The installation of an ion-beam cooler-buncher at the ISOLDE, CERN facility has provided increased sensitivity for collinear laser spectroscopy experiments. A migration of single-particle states in gallium and in copper isotopes has been investigated through extensive measurements of ground state and isomeric state hyperfine structures. Lying beyond the N = 50 shell closure, 82Ga is the most exotic nucleus in the region to have been studied by optical methods, and is reported here for the first time. ispartof: pages:012071-6 ispartof: Journal of Physics: Conference Series vol:381 issue:1 pages:012071-6 ispartof: Rutherford Centennial Conference on Nuclear Physics location:Manchester, UK dat…

HistoryHyperfine structure of gallium isotopesIsotopes of copperCollinear laser spectroscopychemistry.chemical_elementMagnetic and quadrupole moments of gallium isotopeskiihdytinpohjainen fysiikkaEducationydinrakenneGalliumSpectroscopyNuclear ExperimentHyperfine structurenuclear spectroscopyIsotopeaccelerator-based physicsNuclear structureComputer Science ApplicationsCOLLAPS beam lineIsotopes of galliumchemistrynuclear structureydinspektroskopiaPhysics::Accelerator PhysicsAtomic physicsGround stateydinfysiikka
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