Search results for "Gate"
showing 10 items of 1811 documents
Upgrade Analog Readout and Digitizing System for ATLAS TileCal Demonstrator
2013
A potential upgrade for the front-end electronics and signal digitization and data acquisition system of the ATLAS hadron calorimeter for the high luminosity Large Hadron Collider (HL-LHC) is described. A Demonstrator is being built to readout a slice of the TileCal detector. The on-detector electronics includes up to 48 Analog Front-end Boards for PMT analog signal processing, 4 Main Boards for data digitization and slow controls, 4 Daughter Boards with high speed optical links to interface the on-detector and off-detector electronics. Two super readout driver boards are used for off-detector data acquisition and fulfilling digital trigger.\n The ATLAS Tile Calorimeter on-detector electron…
A portable readout system for silicon microstrip sensors
2010
Abstract This system can measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256. The system is able to operate with different types (p- and n-type) and different sizes (up to 3 cm 2 ) of microstrip silicon sensors, both irradiated and non-irradiated. Heavily irradiated sensors will be used at the Super Large Hadron Collider, so this system can be used to research the performance of microstrip silicon sensors in conditions as similar as possible to the Super Large Hadron Collider operating conditions. The system has two main parts: a hardware part and a software part. The hardware part acquires the sensor signals eith…
Polarimetry on dense samples of spin-polarized 3He by magnetostatic detection
1997
Abstract A very sensitive low-field fluxgate magnetometer is used to detect the static magnetic field produced by dense samples of spin-polarized 3He gas contained in spherical glass cells at pressures around several bars. The 3He nuclear polarization can be extracted with high precision ΔP P by utilizing magnetostatic detection in combination with adiabatic fast-passage spin reversal. The polarization losses can be kept well below 0.1% thus making this type of polarimetry almost non-destructive. More simply even, P can be measured with reduced accuracy by the change of field when the cell is removed from the fluxgate. In this case the accuracy is limited to about 10% due to the uncertainti…
Study ofB−→DK−π+π−andB−→Dπ−π+π−decays and determination of the CKM angleγ
2015
We report a study of the suppressed B- -> DK-pi(+)pi(-) and favored B- -> D pi(-)pi(+)pi(-) decays, where the neutral D meson is detected through its decays to the K--/+pi(+/-) and CP -even K+K- and pi(+)pi(-) final states. The measurement is carried out using a proton-proton collision data sample collected by the LHCb experiment, corresponding to an integrated luminosity of 3.0 fb(-1). We observe the first significant signals in the CP - even final states of the D meson for both the suppressed B- -> DK-pi(+)pi(-) and favored B- -> D pi(-)pi(+)pi(-) modes, as well as in the doubly Cabibbo suppressed D -> K+pi(-) final state of the B- -> D pi(-)pi(+)pi(-) decay. Evidence for the suppressed d…
Timing results using an FPGA-based TDC with large arrays of 144 SiPMs
2015
Silicon photomultipliers (SiPMs) have become an alternative to traditional tubes due to several features. However, their implementation to form large arrays is still a challenge especially due to their relatively high intrinsic noise, depending on the chosen readout. In this contribution, two modules composed of SiPMs with an area of roughly mm mm are used in coincidence. Coincidence resolving time (CRT) results with a field-programmable gate array, in combination with a time to digital converter, are shown as a function of both the sensor bias voltage and the digitizer threshold. The dependence of the CRT on the sensor matrix temperature, the amount of SiPM active area and the crystal type…
Frontend electronics for high-precision single photo-electron timing using FPGA-TDCs
2014
Abstract The next generation of high-luminosity experiments requires excellent particle identification detectors which calls for Imaging Cherenkov counters with fast electronics to cope with the expected hit rates. A Barrel DIRC will be used in the central region of the Target Spectrometer of the planned PANDA experiment at FAIR. A single photo-electron timing resolution of better than 100 ps is required by the Barrel DIRC to disentangle the complicated patterns created on the image plane. R&D studies have been performed to provide a design based on the TRB3 readout using FPGA-TDCs with a precision better than 20 ps RMS and custom frontend electronics with high-bandwidth pre-amplifiers and …
High resolution Time of Flight determination based on reconfigurable logic devices for future PET/MR systems
2013
Abstract This contribution shows how to perform Time of Flight (TOF) measurements in PET systems using low-cost Field Programmable Gate Array (FPGA) devices with a resolution better of 100 ps. This is achieved with a proper management of the FPGA internal resources and with an extremely careful device calibration process including both temperature and voltage compensation. Preliminary results are reported.
Time of flight measurements based on FPGA and SiPMs for PET–MR
2014
Coincidence time measurements with SiPMs have shown to be suitable for PET/MR systems. The present study is based on 3 x 3 mm(2) SiPMs, LSO crystals and a conditioning signal electronic circuit. A Constant Fraction Discriminator (CFD) is used to digitalize the signals and a TDC FPGA-implemented is employed for fine time measurements. TDC capability allows processing the arrival of multiple events simultaneously, measuring times under 100 ps. The complete set-up for time measurements results on a resolution of 892 +/- 41 ps for a pair of detectors. The details of such implementation are exposed and the trade-offs of each configuration are discussed. (C) 2013 Elsevier By, All rights reserved,
Effects of Scaling in SEE and TID Response of High Density NAND Flash Memories
2010
Heavy ion single-event effect (SEE) measurements and total ionizing dose (TID) response for Micron Technology single-level cell 1, 2, 4, 8 Gb commercial NAND flash memory and multi-level cell 8, 16, 32 Gb are reported. The heavy ion measurements were extended down to LET 0.1 MeV-cm2/mg. Scaling effects in SEE and TID response are discussed. Floating gate bit error upset cross section does not scale with feature size at high LETs, except for single-level cell 8 Gb device which is built with 51 nm processes. The threshold LET does not change with scaling. Charge pump TID degradation and standby current improves with scaling. In general, the effect of radiation is either unchanged or is less s…
SEGR in SiO${}_2$–Si$_3$N$_4$ Stacks
2014
Abstract. This work presents experimental Single Event Gate Rupture (SEGR) data for Metal–Insulator–Semiconductor (MIS) devices, where the gate dielectrics are made of stacked SiO2–Si3N4 structures. A semi-empirical model for predicting the critical gate voltage in these structures under heavy-ion exposure is first proposed. Then interrelationship between SEGR cross- section and heavy-ion induced energy deposition probability in thin dielectric layers is discussed. Qualitative connection between the energy deposition in the dielectric and the SEGR is proposed. peerReviewed