Search results for "Heterojunction"
showing 10 items of 227 documents
Controlled type-I–type-II transition in GaAs/AlAs/AlxGa1−xAs double-barrier quantum wells
1997
We show that the insertion of extremely narrow AlAs layers in double-barrier GaAs/AlAs/${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As quantum wells results in a variety of electronic configurations, thus providing a powerful tool for tailoring the electronic transitions in GaAs heterostructures. In particular, the transition from type-I to type-II recombination is shown to occur in correspondence with variations by a single monolayer in the thickness of the AlAs and/or GaAs layers. Drastic changes in the recombination lifetimes are correspondingly observed; at the same time, the photoluminescence efficiency is found to be almost independent of the type-I-…
Spin-layer locking of interlayer excitons trapped in moir\'e potentials
2019
Van der Waals heterostructures offer attractive opportunities to design quantum materials. For instance, transition metal dichalcogenides (TMDs) possess three quantum degrees of freedom: spin, valley index, and layer index. Further, twisted TMD heterobilayers can form moir\'e patterns that modulate the electronic band structure according to atomic registry, leading to spatial confinement of interlayer exciton (IXs). Here we report the observation of spin-layer locking of IXs trapped in moir\'e potentials formed in a heterostructure of bilayer 2H-MoSe$_2$ and monolayer WSe$_2$. The phenomenon of locked electron spin and layer index leads to two quantum-confined IX species with distinct spin-…
Understanding the Giant Enhancement of Exchange Interaction in Bi2Se3−EuS Heterostructures
2017
A recent experiment indicated that a ferromagnetic EuS film in contact with a topological insulator ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ might show a largely enhanced Curie temperature and perpendicular magnetic anisotropy [F. Katmis et al., Nature (London) 533, 513 (2016).]. Through systematic density functional calculations, we demonstrate that in addition to the factor that ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ has a strong spin orbit coupling, the topological surface states are crucial to make these unusual behaviors robust as they hybridize with EuS states and extend rather far into the magnetic layers. The magnetic moments of Eu atoms are nevertheless not much enhanced, unlike what was…
Generation and Evolution of Spin-, Valley-, and Layer-Polarized Excited Carriers in Inversion-Symmetric WSe2
2016
We report the spin-selective optical excitation of carriers in inversion-symmetric bulk samples of the transition metal dichalcogenide (TMDC) ${\mathrm{WSe}}_{2}$. Employing time- and angle-resolved photoelectron spectroscopy (trARPES) and complementary time-dependent density functional theory (TDDFT), we observe spin-, valley-, and layer-polarized excited state populations upon excitation with circularly polarized pump pulses, followed by ultrafast ($l100\text{ }\text{ }\mathrm{fs}$) scattering of carriers towards the global minimum of the conduction band. TDDFT reveals the character of the conduction band, into which electrons are initially excited, to be two-dimensional and localized wit…
The influence of disorder on the exciton spectra in two-dimensional structures
2019
We study the role of disorder in the exciton spectra in two-dimensional (2D) semiconductors. These can be heterostructures, thin films and multilayers (so-called van der Waals structures) of organometallic perovskites, transition metal dichalcogenides and other semiconductors for optoelectronic applications. We model the disorder by introduction of a fractional Laplacian (with Le´vy index m, defining the degree of disorder) to the Scro¨dinger equation with 2D Coulomb potential. Combining analytical and numerical methods, we observe that the exciton exists only for m 4 1, while the point m = 1 (strongest disorder) corresponds to the exciton collapse. We show also that in the fractional (diso…
The effect of reducing dimensionality on the excitonic recombination in InAs/InP heterostructures
1997
In this work we study the exciton recombination of InAs/InP self-organized quantum dots by means of photolumincscence (PL) as a function of temperature and excitation density. Well defined islands, spatially separated in most cases, and with different size distribution, make localized exciton recombination the dominant contribution to the PL spectrum. From our experimental results, we propose the co-existence of two types of islands, one with small height whose contribution to the PL spectra is important in samples with low InAs coverage (below two monolayers), and the properly 3D islands, whose dimensions and sheet concentration increase with the InAs coverage. Good quality structures are …
Resonant rayleigh scattering in semiconductor structures
1995
A detailed study of the relative role played by localized and/or propagating intermediate excitonic states in, resonant Rayleigh scattering (RRS) is presented for a large set of GaAs quantum well (QW) and bulk structures. We show that the two kinds of states contribute to RRS through different mechanisms. We concluded that RRS occurs via localized states in QW heterostructures, very likely due to localization by the interface roughness, while bulk, crystals turn out to be better candidates for RRS via propagating states.
Triple magnetopolarons in quantum wells
1997
We derive the equations for eigenstates and eigenenergies of a triple magnetopolaron in quantum-well structures. An iteration procedure for obtaining the wave function and energy including the contributions of diagrams with crossing phonon lines is given. We show that under conditions of exact resonance the middle energy branch of the triply split magnetopolaron state consists of only two out of three bare states. We suggest the experimental verification of this prediction.
Effects of partial thermalization on HBT interferometry
2009
Hydrodynamical models have generally failed to describe interferometry radii measured at RHIC. In order to investigate this ``HBT puzzle'', we carry out a systematic study of HBT radii in ultrarelativistic heavy-ion collisions within a two-dimensional transport model. We compute the transverse radii $R_o$ and $R_s$ as functions of $p_t$ for various values of the Knudsen number, which measures the degree of thermalization in the system. For realistic values of the Knudsen number estimated from $v_2$ data, we obtain $R_o/R_s \simeq 1.2$, much closer to data than standard hydrodynamical results. Femtoscopic observables vary little with the degree of thermalization. Azimuthal oscillations of th…
Symmetry and Topology in Antiferromagnetic Spintronics
2018
Antiferromagnetic spintronics focuses on investigating and using antiferromagnets as active elements in spintronics structures. Last decade advances in relativistic spintronics led to the discovery of the staggered, current-induced field in antiferromagnets. The corresponding Neel spin-orbit torque allowed for efficient electrical switching of antiferromagnetic moments and, in combination with electrical readout, for the demonstration of experimental antiferromagnetic memory devices. In parallel, the anomalous Hall effect was predicted and subsequently observed in antiferromagnets. A new field of spintronics based on antiferromagnets has emerged. We will focus here on the introduction into …