Search results for "Heterojunction"
showing 10 items of 227 documents
Sub-gap defect density characterization of molybdenum oxide: An annealing study for solar cell applications
2020
AbstractThe application of molybdenum oxide in the photovoltaic field is gaining traction as this material can be deployed in doping-free heterojunction solar cells in the role of hole selective contact. For modeling-based optimization of such contact, knowledge of the molybdenum oxide defect density of states (DOS) is crucial. In this paper, we report a method to extract the defect density through nondestructive optical measures, including the contribution given by small polaron optical transitions. The presence of defects related to oxygen-vacancy and of polaron is supported by the results of our opto-electrical characterizations along with the evaluation of previous observations. As part…
A Very Low Band Gap Diketopyrrolopyrrole-Porphyrin Conjugated Polymer
2017
International audience; A porphyrin-diketopyrrolopyrrole-containing polymer (poly(porphyrin-diketopyrrolopyrrole) (PPDPP)) shows impressive molar absorption coefficients from lambda=300 to 1000 nm. The photophysical and structural properties of PPDPP have been studied. With PPDPP as the electron donor and [ 6,6]phenyl C-71 butyric acid methyl ester (PC71BM) as the electron acceptor, the bulk heterojunction polymer solar cell showed overall power conversion efficiencies of 4.18 and 6.44% for as-cast and two-step annealing processed PPDPP: PC71BM (1: 2) active layers, respectively. These results are quite impressive for porphyrin-containing polymers, especially when directly included in the p…
The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures.
2009
The strain state of 1 and 2.5 nm thick GaN insertions in GaN/AlN nanocolumn heterostructures has been studied by means of a combination of high resolution transmission electron microscopy, Raman spectroscopy and theoretical modeling. It is found that 2.5 nm thick GaN insertions are partially relaxed, which has been attributed to the presence of dislocations in the external AlN capping layer, in close relationship with the morphology of GaN insertions and with the AlN capping mechanism. The observed plastic relaxation in AlN is consistent with the small critical thickness expected for GaN/AlN radial heterostructures.
Investigation of absorber and heterojunction in the pure sulphide kesterite
2021
This paper aims to study the properties of the absorber layer and the heterojunction in kesterite solar cells. The Cu2ZnSnS4 (CZTS) thin films were layered on a glass substrate from a colloidal solution of metal salts and thiourea dissolved in a mixture of water and ethanol and deposited by spin coating technique. The samples were then heat treated in a furnace, in the presence of sulphur powder and under a nitrogen gas flow. The results revealed the formation of homogeneous layers of a pure kesterite phase of CZTS crystallites after heat treatment with correct stoichiometry and oxidation states. The optical transmission measurements indicate an energy band-gap of 1.4 eV and an absorption c…
Thin-Film Transistors: Two-Step Solution-Processed Two-Component Bilayer Phthalocyaninato Copper-Based Heterojunctions with Interesting Ambipolar Org…
2016
Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction
2020
Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such devices, other features related to the electrical and structural properties of the GaN layer prevent an efficient radiative recombination. This work illustrates some advances made on ZnO/GaN-based LEDs, by using high-thickness GaN layers for the p-region of the device and an ad hoc device topology. Heterojunction LEDs consist of a quasicoalesced non-intentionally doped ZnO nanorod layer deposited by chemical bath deposition onto a metal&ndash
Large Dzyaloshinskii-Moriya interaction and room-temperature nanoscale skyrmions in CoFeB/MgO heterostructures
2021
Summary Magnetic skyrmions in heavy metal (HM)/CoFeB/MgO structures are of particular interest for skyrmion-based magnetic tunnel junction (MTJ) devices because of their reliable generation, stability, and readout through purely electrical methods. To optimize the properties, such as stability, a strong Dzyaloshinskii-Moriya interaction (DMI) is required at room temperature. Here, using first-principles calculations, we demonstrate that huge DMI can be obtained in Ir/CoFe structures with an Fe-terminated configuration. Moreover, Brillouin light-scattering measurements show that indeed Ta/Ir/Co20Fe60B20/MgO thin films with perpendicular magnetic anisotropy exhibit a large DMI value (1.13 mJ/…
Resonant Raman characterization of InAlGaN/GaN heterostructures
2006
InAlGaN/GaN heterostructures and thin films with In composition ranging from 0.03 to 0.1 are characterized by means of Raman scattering excited at various energies in the ultra violet range, tuning the laser excitation energy through the band gap of In x Al y Ga 1-x-y N. It is shown that the addition of In to the Al y Ga 1-y N alloy diminishes considerably the vibration energy of the A 1 (LO) phonon mode. The phonon line is asymmetric on the low energy side, and the asymmetry increases with In content, while the main peak shifts to lower energies. A shift of the phonon energy has also been observed when the excitation energy is close to the absorption edge of the In x Al y Ga 1-x-y N layer.…