Search results for "ICD"
showing 10 items of 102 documents
Positive Predictive Value of French Hospitalization Discharge Codes for Stroke and Transient Ischemic Attack.
2015
<b><i>Background:</i></b> We aimed at measuring the positive predictive value (PPV) of data in the French Hospital Medical Information Database (FHD). <b><i>Summary:</i></b> This retrospective multicenter study included 31 hospitals from where 56 hospital stays were randomly selected among all hospitalizations for the years 2009 and 2010 with at least 1 principal diagnosis of stroke or transient ischemic attack (TIA). Three algorithms were evaluated. Algorithm 1 selected discharge abstracts with at least 1 principal diagnosis identified by one of the relevant International Classification of Diseases, 10th revision codes. Algorithm 2 selected s…
Prevalence of fatigue in Parkinson disease and its clinical correlates
2014
Objective: To assess in a noninterventional setting the prevalence and severity of fatigue in patients with Parkinson disease (PD). Methods: This was a cross-sectional study conducted in Italian patients with PD. Objectives included the evaluation of the current prevalence and severity of fatigue in patients with PD measured using the 16-item Parkinson Fatigue Scale (PFS-16), distressing fatigue (defined as a PFS-16 mean score $3.3), and assessment of its clinical correlates. Results: A total of 402 patients were enrolled and 394 patients completed the PFS-16 questionnaire with a PFS-16 mean (6SD) score of 2.87 6 0.99. Of these, 136 patients (33.8%) reported distressing fatigue (PFS-16 mean…
ICD Implantation in infants and small children: the extracardiac technique.
2007
There is no clear methodology for implantation of an internal cardioverter-defibrillator (ICD) in infants and small children. The aim of this study was to assess efficacy and safety of an extracardiac ICD implantation technique in pediatric patients.An extracardiac ICD system was implanted in eight patients (age: 0.3-8 years; body weight: 4-29 kg). Under fluoroscopic guidance a defibrillator lead was tunneled subcutaneously starting from the anterior axillar line along the course of the 6th rib until almost reaching the vertebral column. After a partial inferior sternotomy, bipolar steroid-eluting sensing and pacing leads were sutured to the atrial wall (n = 2) and to the anterior wall of t…
Lumped parameter approach of nonlinear networks with transistors
1991
In this chapter we study the lumped parameter modelling of a large class of circuits composed of bipolar transistors, junction diodes and passive elements (resistors, capacitors, inductors). All these elements are nonlinear: the semiconductor components are modelled by “large signal” equivalent schemes, the capacitors and inductors have monotone characteristics while the resistors can be included in a multiport which also has a monotone description.
Nanorings and rods interconnected by self-assembly mimicking an artificial network of neurons
2013
[EN] Molecular electronics based on structures ordered as neural networks emerges as the next evolutionary milestone in the construction of nanodevices with unprecedented applications. However, the straightforward formation of geometrically defined and interconnected nanostructures is crucial for the production of electronic circuitry nanoequivalents. Here we report on the molecularly fine-tuned self-assembly of tetrakis-Schiff base compounds into nanosized rings interconnected by unusually large nanorods providing a set of connections that mimic a biological network of neurons. The networks are produced through self-assembly resulting from the molecular conformation and noncovalent intermo…
Single electron transistor fabricated on heavily doped silicon-on-insulator substrate
2001
Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.
Controlling the mode of operation of organic transistors through side chain engineering
2016
Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode…
CNT-based RFID passive gas sensor
2011
Summary form only given, as follows. Single-wall carbon nanotube (CNT) is examined for the design of a passive and maintenance-free wireless RFID sensor. CNT buckypaper is characterized from a dielectric and a sensitivity point of view, using an indirect way, by using antenna measurement and simulations in a controlled medium. A CNT-based prototype RFID tag is then described as the featured maintenance free sensor and experimentally verified for its applicability and sensitivity towards NH3.
TID and SEE Tests of an Advanced 8 Gbit NAND-Flash Memory
2008
We report on the dose and operational mode dependence of error percentage, stand-by current, erase and write time of 8 Gbit / 4 Gbit NAND-flash memories as well as on their static, dynamic and SEFI cross sections.
Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance
2012
A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.