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showing 10 items of 3539 documents

Low-temperature positron-lifetime studies of proton-irradiated silicon

1990

The positron-lifetime technique has been used to identify defects created in high-purity single-crystal silicon by irradiation with 12-MeV protons at 15 K, and the evolution of the defects has been studied by subsequent annealings between 20 and 650 K. Two clear annealing steps were seen in the samples, the first starting at 100 K and the other at 400 K. The first is suggested to be a result of the migration of free, negatively charged monovacancies, and the second is connected to the annealing of some vacancy-impurity complexes, probably negatively charged vacancy-oxygen pairs. The specific trapping rate of positrons to both of these negatively charged monovacancy-type defects has been fou…

Materials sciencePositronSiliconchemistryProtonAnnealing (metallurgy)chemistry.chemical_elementCrystal structureIrradiationAtomic physicsSingle crystalCrystallographic defectPhysical Review B
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Vacuum-Deposited 2D/3D Perovskite Heterojunctions

2019

Low-dimensional (quasi-) 2D perovskites are being extensively studied in order to enhance the stability and the open-circuit voltage of perovskite solar cells. Up to now, thin 2D perovskite layers on the surface and/or at the grain boundaries of 3D perovskites have been deposited solely by solution processing, leading to unavoidable intermixing between the two phases. In this work, we report the fabrication of 2D/3D/2D perovskite heterostructures by dual-source vacuum deposition, with the aim of studying the interaction between the 3D and 2D phases as well as the charge transport properties of 2D perovskites in neat 2D/3D interfaces. Unlike what is normally observed in solution-processed 3D…

Materials scienceRenewable Energy Sustainability and the Environmentbusiness.industryEnergy Engineering and Power TechnologyHeterojunction02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical sciencesFuel TechnologySemiconductorsChemistry (miscellaneous)Materials ChemistryOptoelectronics0210 nano-technologybusinessMaterialsPerovskite (structure)Voltage
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Memory effects in MOS capacitors with silicon quantum dots

2001

To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon-rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials have been annealed in N2 ambient at temperatures between 950°C and 1100°C. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2. The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain radii and standard deviations down to about 1 nm. The memory functions of such structures has been investigated in MOS capacitors with a SRO film sandwiched between two thin SiO2 layers …

Materials scienceSROOxideBioengineeringInsulator (electricity)Chemical vapor depositionengineering.materialSettore ING-INF/01 - Elettronicalaw.inventionBiomaterialschemistry.chemical_compoundlawThin filmNanocrystal memorybusiness.industrySilicon-rich oxideAmorphous solidCapacitorPolycrystalline siliconchemistryMechanics of MaterialsTransmission electron microscopySingle electron memoryengineeringOptoelectronicsbusiness
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Heavy-ion induced single event effects and latent damages in SiC power MOSFETs

2022

The advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for space, avionics and high-energy accelerator applications. However, the current commercial technologies are still susceptible to Single Event Effects (SEEs) and latent damages induced by the radiation environment. Two types of latent damage were experimentally observed in commercial SiC power MOSFETs exposed to heavy-ions. One is observed at bias voltages just below the degradation onset and it involves the gate oxide. The other damage type is observed at bias voltages below the Single Event Burnout (SEB) limit, and it is attributed to alterations of the SiC crystal-lattice. Focused ion beam (FIB) and s…

Materials scienceScanning electron microscopeRadiationFocused ion beamelektroniikkakomponentitIonSEEschemistry.chemical_compoundstomatognathic systempuolijohteetGate oxideSilicon carbideSiC MOSFETsHeavy-ionDetectors and Experimental TechniquesElectrical and Electronic EngineeringPower MOSFETSafety Risk Reliability and Qualitybusiness.industryionisoiva säteilyCondensed Matter PhysicsLatent damageAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialssäteilyfysiikkachemistrytransistoritOptoelectronicsSiC MOSFETs; Heavy-ion; Latent damage; SEEsbusinessVoltageMicroelectronics Reliability
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Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes

2016

Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.

Materials scienceSchottky barrierchemistry.chemical_elementSchottky diodes01 natural sciencesIonpower semiconductor devicesReverse leakage currentchemistry.chemical_compoundXenonsilicon carbide0103 physical sciencesSilicon carbidecurrent-voltage characteristicsDiode010302 applied physicsta114ta213010308 nuclear & particles physicsbusiness.industrySchottky diodeAngle of incidencemodelingchemistryOptoelectronicsbusinession radiation effects
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Manipulation of charge transfer and transport in plasmonic-ferroelectric hybrids for photoelectrochemical applications

2016

Utilizing plasmonic nanostructures for efficient and flexible conversion of solar energy into electricity or fuel presents a new paradigm in photovoltaics and photoelectrochemistry research. In a conventional photoelectrochemical cell, consisting of a plasmonic structure in contact with a semiconductor, the type of photoelectrochemical reaction is determined by the band bending at the semiconductor/electrolyte interface. The nature of the reaction is thus hard to tune. Here instead of using a semiconductor, we employed a ferroelectric material, Pb(Zr,Ti)O3 (PZT). By depositing gold nanoparticle arrays and PZT films on ITO substrates, and studying the photocurrent as well as the femtosecond …

Materials scienceSciencePhotoelectrochemistryGeneral Physics and AstronomyNanotechnology02 engineering and technology010402 general chemistry01 natural sciences7. Clean energyGeneral Biochemistry Genetics and Molecular BiologyArticlePhotovoltaicsddc:530Polarization (electrochemistry)PhotocurrentMultidisciplinarybusiness.industryQGeneral ChemistryPhotoelectrochemical cell021001 nanoscience & nanotechnologyFerroelectricity0104 chemical sciencesBand bendingSemiconductor0210 nano-technologybusinessNature Communications
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Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy

1997

Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x = 0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth…

Materials scienceSemiconductor MaterialsGrain BoundariesScanning electron microscopeVapor phaseGeneral Physics and AstronomyMercury Compounds ; Cadmium Compounds ; Semiconductor Materials ; Vapour Phase Epitaxial Growth ; Semiconductor Growth ; Semiconductor Epitaxial Layers ; Scanning Electron Microscopy ; X-Ray Topography ; Grain BoundariesEpitaxylaw.inventionlaw:FÍSICA [UNESCO]Cadmium CompoundsSemiconductor Epitaxial Layersbusiness.industryMercury CompoundsX-Ray TopographyUNESCO::FÍSICASynchrotronCadmium telluride photovoltaicsCrystallographySemiconductor GrowthOptoelectronicsVapour Phase Epitaxial GrowthGrain boundaryCrystalliteScanning Electron MicroscopybusinessLayer (electronics)
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Synthesis and thermoelectric characterisation of bismuth nanoparticles

2009

An effective method of preparation of bismuth nanopowders by thermal decomposition of bismuth dodecyl-mercaptide Bi(SC12H25)3 and preliminary results on their thermoelectric properties are reported. The thermolysis process leads to Bi nanoparticles due to the efficient capping agent effect of the dodecyl-disulfide by-product, which strongly bonds the surface of the Bi clusters, preventing their aggregation and significantly reducing their growth rate. The structure and morphology of the thermolysis products were investigated by differential scanning calorimetry, thermogravimetry, X-ray diffractometry, 1H nuclear magnetic resonance spectroscopy, scanning electron microscopy, and energy dispe…

Materials scienceSettore AGR/13 - Chimica AgrariaNanopowderAnalytical chemistryEnergy-dispersive X-ray spectroscopyNanoparticlechemistry.chemical_elementBioengineeringSemimetal–semiconductor transitionBismuthDifferential scanning calorimetrySeebeck coefficientbismuthThermoelectric effectSettore CHIM/01 - Chimica AnaliticaGeneral Materials SciencenanotechnologyBismuth nanoparticleThermoelectric characteristicThermal decompositionSettore CHIM/05 - Scienza E Tecnologia Dei Materiali PolimericiGeneral ChemistryCondensed Matter Physicsthermoelectric propertiesAtomic and Molecular Physics and OpticsThermogravimetrychemistryModeling and SimulationMercaptide thermolysinanoparticlesJournal of Nanoparticle Research
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PPG embedded system for blood pressure monitoring

2014

In this work, we have designed and implemented a microcontroller-based embedded system for blood pressure monitoring through a PhotoPlethysmoGraphic (PPG) technique. In our system, it is possible to perform PPG measurements via reflectance mode. Hardware novelty of our system consists in the adoption of Silicon PhotoMultiplier detectors. The signal received from the photodetector is used to calculate the instantaneous heart rate and therefore the heart rate variability. The obtained results show that, by using our system, it is possible to easily extract both the PPG and the breath signal. These signals can be used to monitor the patients during the convalescence both in hospital and at hom…

Materials scienceSettore INF/01 - InformaticaPhotoPlethysmoGraphybusiness.industryDetectorPhotodetectorSettore ING-INF/02 - Campi ElettromagneticiSignalReflectivitySilicon PhotoMultiplierembedded systemMicrocontrollerSilicon photomultipliersensorEmbedded systemHeart rate variabilityBlood pressure monitoringsense organsbusinessComputer hardware2014 AEIT Annual Conference - From Research to Industry: The Need for a More Effective Technology Transfer (AEIT)
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Influence of Substrate Hydrophilicity on Structural Properties of Supported Lipid Systems on Graphene, Graphene Oxides, and Silica

2021

Pristine graphene, a range of graphene oxides, and silica substrates were used to investigate the effect of surface hydrophilicity on supported lipid bilayers by means of all-atom molecular dynamics simulations. Supported 1,2-dioleoyl-sn-glycero-3-phosphocholine lipid bilayers were found in close-contact conformations with hydrophilic substrates with as low as 5% oxidation level, while self-assembled monolayers occur on pure hydrophobic graphene only. Lipids and water at the surface undergo large redistribution to maintain the stability of the supported bilayers. Deposition of bicelles on increasingly hydrophilic substrates shows the continuous process of reshaping of the supported system a…

Materials scienceSilicon dioxideLipid BilayersMolecular Conformation02 engineering and technologyModel lipid bilayer010402 general chemistry01 natural scienceslaw.inventionchemistry.chemical_compoundlawMonolayerMaterials ChemistryPhysical and Theoretical ChemistryLipid bilayerGrapheneBilayerSubstrate (chemistry)Silicon Dioxide021001 nanoscience & nanotechnology0104 chemical sciencesSurfaces Coatings and FilmschemistryChemical engineeringPhosphatidylcholinesGraphitelipids (amino acids peptides and proteins)0210 nano-technologyHydrophobic and Hydrophilic InteractionsLayer (electronics)The Journal of Physical Chemistry B
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