Search results for "Iode"
showing 10 items of 1284 documents
Ionic liquid modified zinc oxide injection layer for inverted organic light-emitting diodes
2013
Abstract We have demonstrated a novel approach for fabricating efficient hybrid organic–inorganic light emitting diodes (HyLEDs) by introducing dopants into solutions processable metal oxides as an interfacial layer. The doped ZnO is prepared by adding ionic liquid (IL) to a precursor solution for the ZnO. In this way a heavily doped ZnO:ILs cathode was obtained that enhances the electron injection properties and assures a good wetting of the organic active materials.
Large area perovskite light-emitting diodes by gas-assisted crystallization:
2019
Halide perovskites have been gaining considerable attention recently for use in light-emitting applications, due to their bandgap tunability, color purity and low cost fabrication methods. However, current fabrication techniques limit the processing to small-area devices. Here, we show that a facile N 2 gas-quenching technique can be used to make methylammonium lead bromide-based perovskite light-emitting diodes (PeLEDs) with a peak luminance of 6600 cd m −2 and a current efficiency of 7.0 cd A −1 . We use this strategy to upscale PeLEDs to large-area substrates (230 cm 2 ) by developing a protocol for slot-die coating combined with gas-quenching. The resulting large area devices (9 device…
Thin Film Metal Oxides for Displays and Other Optoelectronic Applications
2020
Thin films of metal oxides have been extensively studied for various applications because of their durability, lower cost and lower toxicity, excellent chemical, magnetic, electrical and optical properties. A fusion of electrical and optical properties led to the growth of optoelectronic devices for a variety of applications including displays, light-emitting diodes, photovoltaic cells, photodetectors, optical storage, medicine, and so on. Optoelectronic devices have revolutionized our daily lives with their potentials in various aspects. An extensive research on materials for these devices has to be credited for the improvement in their performance over the years. Several metal oxide thin …
Well-aligned hydrothermally synthesized zinc oxide nanorods on p-GaN without a seed layer
2015
Zinc oxide nanorods have great potential for the realization of high efficiency heterostructure LEDs based on pdoped gallium nitride. In order to obtain a good confinement of the light, a well-aligned nanorod waveguiding structure is desirable. This paper reports on the fabrication of vertical zinc oxide nanorods using a solution-based growth process that does not require a seed layer. The nanorods obtained follow the crystalline growth direction of the GaN layer along the c-axis. Various results with different reagent concentrations are reported.
Voltage-controlled current loops with nanofluidic diodes electrically coupled to solid state capacitors
2016
[EN] We describe experimentally and theoretically voltage-controlled current loops obtained with nanofluidic diodes immersed in aqueous salt solutions. The coupling of these soft matter diodes with conventional electronic elements such as capacitors permits simple equivalent circuits which show electrical properties reminiscent of a resistor with memory. Different conductance levels can be reproducibly achieved under a wide range of experimental conditions (input voltage amplitudes and frequencies, load capacitances, electrolyte concentrations, and single pore and multipore membranes) by electrically coupling two types of passive components: the nanopores (ionics) and the capacitors (electr…
White hybrid organic-inorganic light-emitting diode using ZnO as the air-stable cathode
2009
An efficient white light emitting hybrid organic−inorganic device utilizing air-stable metal oxides as anode and cathode and a polyfluorene mixed with a phosphorescent iridium complex as the emitting material is presented.
Dopant radial inhomogeneity in Mg-doped GaN nanowires
2018
International audience; Using atom probe tomography, it is demonstrated that Mg doping of GaN nanowires grown by Molecular Beam Epitaxy results in a marked radial inhomogeneity, namely a higher Mg content in the periphery of the nanowires. This spatial inhomogeneity is attributed to a preferential incorporation of Mg through the m-plane sidewalls of nanowires and is related to the formation of a Mg-rich surface which is stabilized by hydrogen. This is further supported by Raman spectroscopy experiments which give evidence of Mg-H complexes in the doped nanowires. A Mg doping mechanism such as this, specific to nanowires, may lead to higher levels of Mg doping than in layers, boosting the po…
Frequency-Downconversion Stability of PMMA Coatings in Hybrid White Light-Emitting Diodes
2015
We report on the properties of a poly(methyl methacrylate)-based coating used as a host for an organic dye in hybrid white light-emitting diodes. The device is composed by a pump source, which is a standard inorganic GaN/InGaN blue light-emitting diode (LED) emitting at around 450 nm, and a spin-coated conversion layer making use of Lumogen® F Yellow 083. Under prolonged irradiation, the coating exhibits significant bleaching, thus degrading the color rendering performance of the LED. We present experimental results that confirm that the local temperature rise of the operating diode does not affect the conversion layer. It is also proven that, during the test, the photostability of the orga…
First laser cooling of relativistic ions in a storage ring
1990
The first successful laser cooling of ions at relativistic energies was observed at the Heidelberg TSR storage ring. A $^{7}\mathrm{Li}^{+}$-ion beam of 13.3 MeV was oberlapped with resonant copropagating and counterpropagating laser beams. The metastable ions were cooled from 260 K to a longitudinal temperature of below 3 K and decelerated by several keV. The longitudinal velocity distribution was determined by a fluorescence method. After laser cooling a strongly enhanced narrow peak appeared in the Schottky noise spectrum in addition to the uncooled ion distribution.
How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs?: identification of SRH centers and modeling of trap profile
2021
Recent reports indicated that the use of an InAlN underlayer (UL) can significantly improve the efficiency of InGaN/GaN quantum well (QW) LEDs. Currently, this result is explained by considering that the UL reduces the density of nonradiative recombination centers in the QWs. However, an experimental proof of the reduction of defects in the QWs is not straightforward. In this paper, we use combined electrical (I-V), optical (L-I), capacitance (C-V), steady-state photocapacitance (SSPC) and light-assisted capacitance-voltage (LCV) measurements to explain why devices with UL have a much higher efficiency than identical LEDs without UL. Specifically, we demonstrated an improvement in both elec…