Search results for "Iode"
showing 10 items of 1284 documents
Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring
2014
We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical Schottky UV detectors, based on the pinch-off surface effect and obtained employing Ni2Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I–V characteristics as a function of the temperature and the C–V characteristics. Responsivity measurements of the devices, as a function of the wavelength (in the 200 – 400 nm range), of the package temperature and of the applied reverse bias are reported. We compared devices featured by different strip pitch size, and found that the 10 μm device pitch exhibits the best results, being the best compromise in terms of fu…
CW and Q-switched diode end-pumped Nd:YAP laser at 1.34 µm. Influence of Nd doping level
2001
A multi watt CW 1.34 µm diode end-pumped Nd:YAP laser is described. Acoustooptic device is tested to obtain Q-switched operation. The influence of the Nd3+ doping level in YAP crystal on the laser efficiency, in CW and in Q-switched mode, is presented.
A Comparative Performance Study of a 1200 V Si and SiC MOSFET Intrinsic Diode on an Induction Heating Inverter
2014
This paper presents a comparison of the behavior of the intrinsic diode of silicon (Si) and silicon carbide (SiC) MOSFETs. The study was done for 1200 V Si and SiC MOSFETs. The data sheet from manufacturers shows the characteristics of MOSFET' intrinsic diode when gate source voltage (VGS) is 0 V. There are applications where the MOSFET' intrinsic diode is used while VGS is different than 0 V. One of these applications is induction heating, where depending on the load and the regulation system, the diode can conduct a significant part of the inverter current. In most applications which use the MOSFET' intrinsic diode, the turn ON of the intrinsic diode happens at VGS = 0 V. After a blanking…
50 mJ/30 ns FTIR Q-switched diode-pumped Er:Yb:glass 1.54 μm laser
2001
Abstract 50 mJ Q-switched output at 30 ns pulse duration was demonstrated with a transversely diode-pumped bulk Er 3+ :Yb 3+ :glass 1.54 μm laser system of uncomplicated and compact design, using a piezoelectrically driven FTIR shutter. In long-pulse operation, 360 mJ output was obtained for 2.65 J incident optical pump energy. Maximum optical slope efficiencies of 20.5% and 5.4% were measured in long-pulse and Q-switched operation, respectively. Optimum Q-switch timing was studied taking into account the Yb 3+ →Er 3+ energy transfer process and was correlated with free-running delay parameters.
Solution processed organic light-emitting diodes using a triazatruxene crosslinkable hole transporting material.
2018
A cross-linkable triazatruxene that leads to insoluble films upon thermal annealing at temperatures compatible with flexible substrates is presented. The films were used as the hole transporting and electron blocking layer in partially solution processed phosphorescent organic light-emitting diodes, reaching power conversion efficiencies of 24 lm W−1, an almost 50% improvement compared to the same OLEDs without the cross-linkable hole transporting layer.
Hybrid Circuits with Nanofluidic Diodes and Load Capacitors
2017
[EN] The chemical and physical input signals characteristic of micro- and nanofluidic devices operating in ionic solutions should eventually be translated into output electric currents and potentials that are monitored with solid-state components. This crucial step requires the design of hybrid circuits showing robust electrical coupling between ionic solutions and electronic elements. We study experimentally and theoretically the connectivity of the nanofluidic diodes in single-pore and multipore membranes with conventional capacitor systems for the cases of constant, periodic, and white-noise input potentials. The experiments demonstrate the reliable operation of these hybrid circuits ove…
Analysis of multi-spectral photoplethysmograph biosensors
2013
Multi-spectral photoplethysmograph biosensor intended for analysis of peripheral blood volume pulsations at different vascular depths has been experimentally tested. Light emitting diodes with four different wavelengths were used as the light emitters. A single photodiode with multi-channel signal output processing was used as the light detector. This study analyzed rising time difference between wavelengths at systole maximum, wavelengths relations between systole and diastole peak difference. The proposed methodology is discussed.
Ionic circuitry with nanofluidic diodes
2019
Ionic circuits composed of nanopores functionalized with polyelectrolyte chains can operate in aqueous solutions, thus allowing the control of electrical signals and information processing in physiological environments. We demonstrate experimentally and theoretically that different orientations of single-pore membranes with the same and opposite surface charges can operate reliably in series, parallel, and mixed series-parallel arrangements of two, three, and four nanofluidic diodes using schemes similar to those of solid-state electronics. We consider also different experimental procedures to externally tune the fixed charges of the molecular chains functionalized on the pore surface, show…
Efficient pulsed 946-nm laser emission from Nd:YAG pumped by a titanium-doped sapphire laser
2008
Efficient pulsed room-temperature laser emission at 946 nm is obtained from a Nd:YAG rod pumped by a Ti-doped sapphire laser in the free-running mode. Three bonded YAG rods of 3-mm diameter with different Nd concentrations and active lengths were tested. A maximum output energy of 83.5 mJ at 3 Hz was obtained with a slope efficiency of 32.3% in an end-pumping configuration.
Efficient Polymer Light‐Emitting Diode Using Air‐Stable Metal Oxides as Electrodes
2009
Poly(phenylenevinylene)‐based organic light‐emitting diodes (OLEDs) are fabricated using air‐stable metal oxides as electrodes, producing very efficient and bright electroluminescent devices. Efficiencies of 8 cd A−1 and luminances above 20000 cd m−2 are obtained, comparable to the values reported for classic OLED structures using reactive metals as cathodes.