Search results for "Iode"
showing 10 items of 1284 documents
Objective health literacy skills among ninth graders in Finland : outcomes from a national learning assessment
2021
Background:Health literacy (HL) is an important determinant for maintaining and improving health throughout the lifespan. This underlines the need to monitor HL, including among adolescents, and to understand the factors explaining HL, with a view to decreasing differences in HL. The aim of this study was to objectively measure HL, and the relationship between HL and socio-demographic factors (gender, language of instruction, pupils’ educational aspirations, parents’ educational background and pupils’ school achievement) among pupils ( n = 3652) at the end of basic education in Finland.Methods:A nationally representative assessment, which included 55 items on HL, was conducted as a traditio…
Hidden attractors and multistability in a modified Chua’s circuit
2021
The first hidden chaotic attractor was discovered in a dimensionless piecewise-linear Chua’s system with a special Chua’s diode. But designing such physical Chua’s circuit is a challenging task due to the distinct slopes of Chua’s diode. In this paper, a modified Chua’s circuit is implemented using a 5-segment piecewise-linear Chua’s diode. In particular, the coexisting phenomena of hidden attractors and three point attractors are noticed in the entire period-doubling bifurcation route. Attraction basins of different coexisting attractors are explored. It is demonstrated that the hidden attractors have very small basins of attraction not being connected with any fixed point. The PSIM circui…
Measurements of the stopping forces for heavy ions in Ge, Ag and Au using novel ‘polka-dot’ detectors
2006
Measurements of the stopping forces for C-14, N-14 and O-16 ions in Ge and Au, for N-14 and F-19 ions in Ag, as well as for F-19 ions in Au have been made, respectively. A novel technique, reported recently, using PIN diodes coated directly with the stopping medium in a polka dot pattern was used. This provided a set of precise, self-consistent measurements on the same stopping medium. Results show small but significant deviations from SRIM stopping predictions and are also compared to a recently-developed empirical stopping force predictor.
Complete sequencing of Novosphingobium sp. PP1Y reveals a biotechnologically meaningful metabolic pattern.
2014
Background Novosphingobium sp. strain PP1Y is a marine α-proteobacterium adapted to grow at the water/fuel oil interface. It exploits the aromatic fraction of fuel oils as a carbon and energy source. PP1Y is able to grow on a wide range of mono-, poly- and heterocyclic aromatic hydrocarbons. Here, we report the complete functional annotation of the whole Novosphingobium genome. Results PP1Y genome analysis and its comparison with other Sphingomonadal genomes has yielded novel insights into the molecular basis of PP1Y’s phenotypic traits, such as its peculiar ability to encapsulate and degrade the aromatic fraction of fuel oils. In particular, we have identified and dissected several highly …
Radiation Tolerance Tests of Small-Sized CsI(Tl) Scintillators Coupled to Photodiodes
2009
Radiation tolerance of small-sized CsI (Tl) crystals coupled to silicon photodiodes was studied by using protons. Irradiations up to the fluence of 1012 protons/cm2 were used. Degradation of light output by less than 5% was achieved.
Electric field manipulation in Al/CdTe/Pt detectors under optical perturbations
2017
Abstract Al/CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopy, even though they suffer from polarization phenomena, which cause a progressive time degradation of the spectroscopic performance. In this work we investigated on the time dependence of the electric field of an Al/CdTe/Pt detector under optical perturbation by means of Pockels effect measurements. A tunable laser with wavelengths ranging within 700−1000 nm and a 940 nm light emitting diode (LED) were used. The measurements of both the electric field profile and the total current were used to better understand the effects of the optical perturbation on polarization phenomena. The results point ou…
Mass measurement of cooled neutron-deficient bismuth projectile fragments with time-resolved Schottky mass spectrometry at the FRS-ESR facility
2005
Masses of 582 neutron-deficient nuclides ($30\leq{Z}\leq{85}$) were measured with time-resolved Schottky mass spectrometry at the FRS-ESR facility at GSI, 117 were used for calibration. The masses of 71 nuclides were obtained for the first time. A typical mass accuracy of 30 $\mu$u was achieved. These data have entered the latest atomic mass evaluation. The mass determination of about 140 additional nuclides was possible via known energies ($Q$-values) of $\alpha-$, $\beta-$, or proton decays. The obtained results are compared with the results of other measurements.
Frequency-agile gyrotron for electron decoupling and pulsed dynamic nuclear polarization.
2017
We describe a frequency-agile gyrotron which can generate frequency-chirped microwave pulses. An arbitrary waveform generator (AWG) within the NMR spectrometer controls the microwave frequency, enabling synchronized pulsed control of both electron and nuclear spins. We demonstrate that the acceleration of emitted electrons, and thus the microwave frequency, can be quickly changed by varying the anode voltage. This strategy results in much faster frequency response than can be achieved by changing the potential of the electron emitter, and does not require a custom triode electron gun. The gyrotron frequency can be swept with a rate of 20 MHz/μs over a 670 MHz bandwidth in a static magnetic …
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes
2020
The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion linear energy transfer (LET), and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating.
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
2020
Heavy-ion data suggest that a common mechanism is responsible for single-event burnout (SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly, heavy-ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highly localized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and SEB for both the MOSFETs and JBS diodes.