Search results for "Ion implantation"
showing 10 items of 34 documents
Planar Technology for NDT-Ge X-Ray Microcalorimeters: Absorber Fabrication
2009
We have investigated the electroplating process to deposit thick uniform films of tin on a Ge wafer coated with Spin‐On Glass, in order to fabricate the absorbers for Ge microcalorimeter arrays. Here we discuss some technological details and propose two alternative metal bilayer to be used as seed for the electroplating.
Energy leaks through the optical barrier created by H+ implantation in BaTiO3 and LiNbO3 planar waveguides
1998
Abstract The energy leaks through the index barrier created by the proton implantation process are put in evidence in planar optical waveguides made in BaTiO 3 and LiNbO 3 substrates. The selective detection of the light emerging from the guiding region permits to measure the optical attenuation of the guided wave. The results obtained on mono or twice implanted LiNbO 3 and BaTiO 3 waveguides are presented and discussed. It is shown that the light confinement is better in BaTiO 3 than in LiNbO 3 .
Hydrogen- and helium-implanted silicon: Low-temperature positron-lifetime studies
1991
High-purity single-crystal samples of float-zoned Si have been implanted with 6.95-MeV protons and with 25-MeV {sup 3}He{sup 2} ions at 15 K, and the positron-lifetime technique has been used to identify the defects created in the samples, and to study the effects of H and He on the annealing of point defects in Si. The results have been compared with those of proton-irradiated Si. A 100--300-K annealing stage was clearly observed in hydrogen (H{sup +}) -implanted Si, and this stage was almost identical to that in the {ital p}-irradiated Si. The final annealing state of the H{sup +}-implanted Si started at about 400 K, and it is connected to annealing out of negatively charged divacancy-oxy…
The “accumulation effect” of positrons in the stack of foils, detected by measurements of the positron implantation profile
2013
The profiles of positrons implanted from the radioactive source 22Na into a stack of foils and plates are the subject of our experimental and theoretical studies. The measurements were performed using the depth scanning of positron implantation profile method, and the theoretical calculations using the phenomenological multi-scattering model (MSM). Several stacks consisting of silver, gold and aluminum foils, and titanium and germanium plates were investigated. We notice that the MSM describes well the experimental profiles; however when the stack consisting of silver and gold foils, the backscattering and linear absorption coefficients differ significantly from those reported in the litera…
Effects of irradiation damage on the back-scattering of electrons: silicon-implanted silicon
2007
Radiation damage in an (initially crystalline) silicon wafer was generated by microbeam implantation with 600 keV Si+ ions (fluence 5 x 1014 ions/cm²). To produce micro-areas with different degrees of damage, 14 implantations at different temperatures (between 23 and 225 °C) were done. The structural state of irradiated areas was characterized using Raman spectroscopy and electron back-scatter diffraction. All irradiated areas showed strong structural damage in surficial regions (estimated depth <1 μm), and at implant substrate temperatures of below 130 °C, the treatment has caused complete amorphization. Back-scattered electron (BSE) images exhibited that observed BSE intensities correlate…
The effects of ion implantation damage to photonic crystal optomechanical resonators in silicon
2021
Abstract Optomechanical resonators were fabricated on a silicon-on-insulator substrate that had been implanted with phosphorus donors. The resonators’ mechanical and optical properties were then measured (at 6 K and room temperature) before and after the substrate was annealed. All measured resonators survived the annealing and their mechanical linewidths decreased while their optical and mechanical frequencies increased. This is consistent with crystal lattice damage from the ion implantation causing the optical and mechanical properties to degrade and then subsequently being repaired by the annealing. We explain these effects qualitatively with changes in the silicon crystal lattice struc…
Critical temperature modification of low dimensional superconductors by spin doping
2007
Ion implantation of Fe and Mn into Al thin films was used for effective modification of Al superconductive properties. Critical temperature of the transition to superconducting state was found to decrease gradually with implanted Fe concentration. it was found that suppression by Mn implantation much stronger compared to Fe. At low concentrations of implanted ions, suppression of the critical temperature can be described with reasonable accuracy by existing models, while at concentrations above 0.1 at.% a pronounced discrepancy between the models and experiments is observed.
Defect reactions of implanted Li in ZnSe observed by β-NMR
2001
Abstract Using β-radiation detected nuclear magnetic resonance (β-NMR), we investigated the microscopic behavior of implanted 8 Li in nominally undoped ZnSe crystals. From the temperature-dependent amplitudes of high-resolution NMR spectra we conclude a gradual interstitial-to-substitutional site change between 200 and 350 K . This is in accordance with earlier emission channeling results. We argue that this conversion proceeds via Lii++VZn2−→LiZn− and involves implantation related Zn vacancies.
Resonance ionization of holmium for ion implantation in microcalorimeters
2016
Abstract The determination of the electron neutrino mass by calorimetric measurement of the 163 Ho electron capture spectrum requires ultra-pure samples. Several collaborations, like ECHo or HOLMES, intend to employ microcalorimeters into which 163 Ho is implanted as an ion beam. This makes a selective and additionally very efficient ion source for holmium mandatory. For this purpose, laser resonance ionization of stable holmium 165 Ho was studied, using a three step excitation scheme driven by pulsed Ti:sapphire lasers. Five measurements with sample sizes of 10 14 and 10 15 atoms were performed for the efficiency investigation. In average, an excellent ionization efficiency of 32(5) % coul…
Ion irradiation of AZO thin films for flexible electronics
2017
Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O+ or Ar+ ion beams (30–350 keV, 3 × 1015–3 × 1016 ions/cm2) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a …