Search results for "JUNCTION"
showing 10 items of 862 documents
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
2007
We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state- of- the- art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of ( 1 - 5) x 10(18) cm(-3) and a large Stokes shift (similar to 800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified …
Photoluminescence of Ga-face AlGaN/GaN single heterostructures
2001
Abstract The radiative recombination in Ga-face Al 0.30 Ga 0.70 N/GaN single heterostructures (SHs) was studied by photoluminescence (PL) measurements. An energy shift of the excitonic transitions toward higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. In addition to these exciton lines, a broad band energetically localized between the exciton lines and the LO-phonon replica was noticed in the undoped SH. From its energy position, excitation power dependence, as well as temperature behaviour, we have attributed this luminescence to the H -band (HB), which is representative of the two-dimensional electron gas (2DEG) recombination.
Interlayer exciton dynamics in van der Waals heterostructures
2019
Atomically thin transition metal dichalcogenides can be stacked to van der Waals heterostructures enabling the design of new materials with tailored properties. The strong Coulomb interaction gives rise to interlayer excitons, where electrons and holes are spatially separated in different layers. In this work, we reveal the time- and momentum-dependent elementary processes behind the formation, thermalization and photoemission of interlayer excitons for the exemplary MoSe2–WSe2 heterostructure. We identify tunneling of holes from MoSe2 to WSe2 on a ps timescale as the crucial process for interlayer exciton formation. We also predict a drastic reduction of the formation time as a function of…
<title>Formation of deep acceptor centers in AlGaN alloys</title>
2008
AlGaN alloy thin film materials are of high interest for light emitting diodes (LED of the ultraviolet (UV) spectral region. Origin of the deep intrinsic and impurity Si states in the AlxGa1-xN (0 < x < 0.35) epilayer structures grown by metalorganic chemical vapor deposition (MOCVD) technique have been considered. Effects of the lattice mismatch and Si-doping in the heterostructures of epilayers with different alloy composition are investigated using time resolved photoluminescence (PL) of donor – deep acceptor (DA) pairs. It is shown that the undoped AlGaN alloys, grown on a GaN buffer layer, due to the lattice mismatch contain the increased concentration of cation vacancy (Vcation) defec…
Green light-emitting devices based on soluble oligo(phenylenevinylenes)
2005
In this work, we report our investigations on the film-forming properties as well as the optical and electroluminescent characterisations of a series of lateral-substituted soluble oligo(phenylenevinylenes) of various conjugation length. Preliminary investigations show that these materials are potential candidates for use in organic light-emitting devices (OLEDs). Two types of OLEDs were fabricated: single layer (SL) and single heterostructure (SHS), with poly(p-phenylenevinylene) (PPV) as hole transporting layer. Our best results were obtained with single layer device emitting green light with a luminance of 0.18 cd m(-2) and 0.24 cd m(-2) at a driving voltage of 10 V. (c) 2004 Elsevier B.…
VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion.
2014
International audience; We report on the growth and microstructure analysis of high Cd content ZnCdO/ZnO multiple quantum wells (MQW) within a nanowire. Heterostructures consisting of ten wells with widths from 0.7 to 10nm are demonstrated, and show photoluminescence emissions ranging from 3.03 to 1.97eV. The wells with thicknesses⩽2nm have high radiative efficiencies compared to the thickest ones, consistent with the presence of quantum confinement. However, a nanometric analysis of the Cd profile along the heterostructures shows the presence of Cd diffusion from the ZnCdO well to the ZnO barrier. This phenomenon modifies the band structure and the optical properties of the heterostructure, an…
Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots
2002
6 páginas, 3 figuras.
r‐Process Abundances and Chronometers in Metal‐poor Stars
1998
Rapid neutron-capture (i.e., r-process) nucleosynthesis calculations, employing internally consistent and physically realistic nuclear physics input (QRPA beta-decay rates and the ETFSI-Q nuclear mass model), have been made. These calculations are compared with ground-based and HST observations of neutron-capture elements in the metal poor halo stars CS 22892--052, HD 115444, HD 122563 and HD 126238. The elemental abundances in all four metal-poor stars are consistent with the solar r-process elemental distribution for the elements Z >/= 56. These results strongly suggest, at least for those elements, that the relative elemental r-process abundances have not changed over the history of t…
Observation of disorder-induced weakening of electron-phonon interaction in thin noble-metal films
2003
We have used symmetric normal metal-insulator-superconductor (NIS) tunnel junction pairs, known as SINIS structures, for ultrasensitive thermometry in the temperature range 50 - 700 mK. By Joule heating the electron gas and measuring the electron temperature, we show that the electron-phonon (e-p) scattering rate in the simplest noble metal disordered thin films (Cu,Au) follows a $T^4$ temperature dependence, leading to a stronger decoupling of the electron gas from the lattice at the lowest temperatures. This power law is indicative e-p coupling mediated by vibrating disorder, in contrast to the previously observed $T^3$ and $T^2$ laws.
Direct measurement of the electron‐phonon relaxation rate in thin copper films
2004
We have used normal metal-insulator-superconductor (NIS) tunnel junction pairs, known as SINIS structures, for ultrasensitive thermometry at sub-Kelvin temperatures. With the help of these thermometers, we have developed an ac-technique to measure the electron-phonon (e-p) scattering rate directly, without any other material or geometry dependent parameters, based on overheating the electron gas. The technique is based on Joule heating the electrons in the frequency range DC-10 MHz, and measuring the electron temperature in DC. Because of the nonlinearity of the electron-phonon coupling with respect to temperature, even the DC response will be affected, when the heating frequency reaches th…