Search results for "Laser deposition"
showing 10 items of 80 documents
Correlation between optical and transport properties of Ga-doped ZnO thin films prepared by pulsed laser deposition
2006
Abstract In this paper we report on the correlation between the transport and optical properties of Ga-doped ZnO films epitaxially grown on C-oriented sapphire substrates by means of pulsed laser deposition. Thin films with electron concentrations ranging between 10 20 and 10 21 cm −3 were prepared from targets containing 0.25–5 at.% Ga. The Ga content in the thin films was estimated by XPS, from the ratio between the intensities of the 2p peaks of Ga and Zn. The electron concentration in the films is very close to the Ga content for films prepared from low Ga content targets even at high deposition temperature. For Ga contents in the target larger than 1%, the Ga content in the films incr…
Pulsed Laser Deposition of Cs 2 AgBiBr 6 : from Mechanochemically Synthesized Powders to Dry, Single-Step Deposition
2021
Cs2AgBiBr6 has been proposed as a promising lead-free and stable double perovskite alternative to hybrid and lead-based perovskites. However, the low solubility of precursors during wet synthesis, or the distinct volatility of components during evaporation, results in complex multistep synthesis approaches, hampering the widespread employment of Cs2AgBiBr6 films. Here, we present pulsed laser deposition of Cs2AgBiBr6 films as a dry, single-step and single-source deposition approach for high-quality film formation. Cs2AgBiBr6 powders were prepared by mechanochemical synthesis and pressed into a solid target maintaining phase purity. Controlled laser ablation of the double perovskite target i…
Deposition of indium tin oxide films by laser ablation: Processing and characterization
1998
Abstract In this work an indium tin oxide thin film fabrication technique based on pulsed laser deposition is described and the electrical, optical and mechanical properties of the deposited films are reported. Deposition of high quality films on cold substrates was proved. The third harmonic (355 nm) of an Nd:YAG laser was employed to photoablade the indium tin oxide target.
Absence of element specific ferromagnetism in Co doped ZnO investigated by soft X-ray resonant reflectivity
2010
On the quest for the intrinsic origin of ferromagnetism (FM) in ZnO doped with a few percent transition metal, we show detailed X-ray resonant magnetic reflectivity (XRMR) measurements, performed at the Co L2,3 and the O K edges of pulsed laser deposition (PLD) prepared samples. These samples show ferromagnetism at room temperature (RT) (QUID: about 2μB /Co). But in contrast to the QUID measurements, element specific reflection measurements as a function of angle (θ-2θ scans) and energy (const. qz) do not show any sign of ferromagnetism. Therefore, we can exclude without doubt Co as a possible origin for FM in this system. Our results are in perfect agreement with earlier published XMCD dat…
Optical active centres in ZnO samples
2006
Abstract In recent years, there has been a resurgence in the interest in the use of ZnO (Eg ∼ 3.37 eV) as a material for a wide range of opto-emitter applications spanning visible and short wavelengths. Bulk, thin films and nanomaterials obtained using different synthesis methods have been investigated for optoelectronic and biotechnological device applications. Nominally undoped bulk samples typically present a myriad-structured near-band-edge recombination, mainly due to free/bound excitons and donor–acceptor pair transitions. Furthermore, deep level emission due to intrinsic defects and extrinsic impurities, such as transition metal ions, are commonly observed in different grades of bulk…
Fabrication and Characterization of Epitaxial NbN/TaN/NbN Josephson Junctions Grown by Pulsed Laser Ablation
2009
We report fabrication and characterization of epitaxial NbN/TaN/NbN Josephson junctions grown by pulsed laser ablation. These SNS junctions can be used as elements of rapid-single-flux-quantum (RSFQ) logic, which is a promising technology for high speed digital electronic devices. The NbN/TaN/NbN trilayer films were prepared on a single crystal MgO substrate by pulsed laser ablation, and patterned into junctions using a novel process utilizing e-beam lithography, chemical vapor deposition and e-beam evaporation. The quality of junctions was tested by measuring the temperature dependence of the junctions' IcRn values, observed to be quite close to theoretical values.
Some aspects of pulsed laser deposition of Si nanocrystalline films
2009
International audience; Nanocrystalline silicon films were deposited by a picosecond laser ablation on different substrates in vacuum at room temperature. A nanocrystalline structure of the films was evidenced by atomic force microscopy (AFM), optical and Raman spectroscopies. A blue shift of the absorption edge was observed in optical absorption spectra, and a decrease of the optical phonon energy at the Brillouin zone centre was detected by Raman scattering. Early stages of nanocrystalline film formation on mica and HOPG substrates were studied by AFM. Mechanism of nanocrystal growth on substrate is discussed.
Surface modifications induced by nanosecond pulsed Nd:YAG laser irradiation of metallic substrates
2006
International audience; Substrate surface preparation is a key step in coating deposition process. In recent years, pulsed laser cleaning has emerged as a possible technique to challenge the traditional preparation methods (based on degreasing and eventually grit-blasting). The laser operated at short-pulse mode offers high cleaning efficiency and therefore has been largely used. In a specific process named PROTAL®, a nanosecond pulsed laser is introduced to prepare the surface simultaneously to thermal spraying, with the purpose of eliminating the contaminants and generating favorite surface conditions for coating deposition. This study aims at clarifying some fundamental aspects of nanose…
Resistive switching behaviour in ZnO and VO 2 memristors grown by pulsed laser deposition
2014
The resistive switching behaviour observed in microscale memristors based on laser ablated ZnO and VO 2 is reported. A comparison between the two materials is reported against an active device size. The results show that devices up to 300 × 300 μm 2 exhibit a memristive behaviour regardless of the device size, and 100 × 100 μm 2 ZnO-based memristors have the best resistance off/on ratio.
Structural, vibrational and electronic properties in the glass-crystal transition of thin films Sb70Te30 doped with Sn
2020
Abstract Antimony-telluride based phase-change materials doped with Sn have been proposed to be ideal materials for improving the performance of phase-change memories. It is well known that Sb70Te30 thin films show a sharp fall in the electrical resistance in a narrow temperature range when heating. Therefore, it is interesting to study the effect of adding Sn into this composition. In this work, undoped and Sn-doped Sb–Te thin films of composition Snx[Sb0.70Te0.30]100-x, with x = 0.0, 2.5, 5.0 and 7.5 at. %, have been obtained by pulsed laser deposition. Their electrical resistance has been measured while heating from room temperature to 650 K. A sharp fall in the electrical resistance, as…