Search results for "Laser theory"
showing 10 items of 35 documents
Infrared pulsed laser deposition of niobium nitride thin films
2011
We have successfully fabricated superconducting niobium nitride thin films on single crystals of magnesium oxide using a pulsed laser deposition technique where 1064 nm (photon energy ~1.16 eV) laser pulses from an Nd:YAG laser were used for ablation. A correlation between the superconducting transition temperature, the nitrogen base pressure during deposition and the lattice parameter of the produced NbN films was observed. Superconductor-insulator-normal metal junctions fabricated using these NbN films as the superconductor revealed nonlinear electrical characteristics at 4.2 K associated with quasiparticle tunneling.
Wide Temperature Operation of 40-Gb/s 1550-nm Electroabsorption Modulated Lasers
2006
Electroabsorption modulated lasers (EMLs) exploiting the quantum confined Stark effect need thermoelectric coolers to achieve stable output power levels and dynamic extinction ratios. Temperature-independent operation is reported between 20/spl deg/C and 70/spl deg/C for InGaAlAs-InP-based monolithically integrated 1550-nm EMLs exploiting a shared active area at 40 Gb/s by actively controlling the electroabsorption modulator bias voltage. Dynamic extinction ratios of at least 8 dB and fiber-coupled mean modulated optical power of at least 0.85 mW are obtained over the mentioned temperature range.
Dark-Line Atomic Resonances in Micrometric Rb-Vapor Layer
2007
We present measurements of dark-line resonances excited in Rb atomic vapor confined in micrometric cells (MC). In our work, the Lambda-systems on D2 line of 85Rb have been studied with the use of bi-chromatic radiation of two separate narrowband diode lasers.
750 mW continuous-wave solid-state deep ultraviolet laser source at the 253.7 nm transition in mercury.
2007
A high-power continuous-wave coherent light source at 253.7 nm is described. It is based on a solid-state Yb:YAG disk laser with two successive frequency doubling stages and is capable of generating stable output powers of up to 750 mW. Spectroscopy of the 6 (1)S(0)-6 (3)P(1) transition of mercury has been demonstrated.
Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments
2019
A two-photon absorption technique is used to understand the mechanisms of single-event effects (SEEs) in silicon carbide power metal–oxide–field-effect transistors (MOSFETs) and power junction barrier Schottky diodes. The MOSFETs and diodes have similar structures enabling the identification of effects associated specifically with the parasitic bipolar structure that is present in the MOSFETs, but not the diodes. The collected charge in the diodes varies only with laser depth, whereas it varies with depth and lateral position in the MOSFETs. Optical simulations demonstrate that the variations in collected charge observed are from the semiconductor device structure and not from metal/passiva…
Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers
2004
We report on the continuous-wave amplification characteristics of an optically pumped 1.3-μm multiple-quantum-well GaInNAs-GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The VCSOA structure was monolithically grown by molecular beam epitaxy and operated in reflection mode in a fiber-coupled system. The maximum on-chip gain attained, limited by the onset of laser action, was 15.6 dB at 196 mW of 980-nm pump power. For a chip gain of 10.4 dB, the optical bandwidth was 10.8 GHz and the saturation output power was -9 dBm. By varying the pump laser power, a maximum extinction ratio of 22.3 dB was obtained. Temperature-controlled tuneable operation of the device is also presented a…
GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applications
2004
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.
Temperature elevations in endosseous dental implants and the peri-implant bone during diode-laser-assisted surface decontamination
2002
The aim of the study was to investigate temperature elevations in the implant surface and the peri-implant bone during simulated surface decontamination of endosseous dental implants with an 809 nm semiconductor laser. Stepped cylinder implants were inserted into bone blocks cut from resected pig femurs. An artificial peri-implant bone defect provided access for the irradiation of the implant surface. A 600 micron optic fiber was used at a distance of 0.5 mm from the implant surface. Power output varied between 0.5 and 2.5 W in the cw-mode. Power density was between 176.9 and 884.6 Wcm -2 . The bone block was placed into a 37 degree(s)C water bath in order to simulate in vivo thermal conduc…
Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells
2007
The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN/GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at similar to 420 nm is achieved under pulsed excitation at room temperature for a peak power density of 400 kW/cm(2). The lasing emission linewidth is down to 0.033 nm.
Cavity solitons in lasers with spatially modulated injected signal
2009
The injection of a monochromatic signal into a laser is a well-known technique for locking the laser phase to that of the injection. Some years ago another type of injection, called rocking [1,2], was introduced to render the laser phase-locking bistable. Rocking consists of the modulation of the amplitude injection so that its sign changes periodically, or even randomly [3], in time. Here we present an alternative to rocking that leads to the same type of behaviour, namely the appearance of bistable phase locking and, in the case of large Fresnel number lasers, to stable (phase bistable) cavity solitons and extended patterns. The new type of injection we present here is monochromatic, unli…