Search results for "MAGNETORESISTANCE"

showing 10 items of 173 documents

Theory of domain-wall magnetoresistance in metallic antiferromagnets

2020

We develop a theory to compute the domain-wall magnetoresistance (DWMR) in antiferromagnetic (AFM) metals with different spin structures. In the diffusive transport regime, the DWMR can be either {\it negative} or positive depending on the domain-wall orientation and spin structure. In contrast, when the transport is in the ballistic regime, the DWMR is always positive, and the magnitude depends on the width and orientation of the domain wall. Our results pave the way of using electrical measurements for probing the internal spin structure in antiferromagnetic metals.

Magnetoresistance530 PhysicsFOS: Physical sciences02 engineering and technologySpin structure01 natural sciencesMetal0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)AntiferromagnetismElectrical measurements010306 general physicsSpin-½PhysicsCondensed Matter - Materials ScienceQuantum PhysicsCondensed Matter - Mesoscale and Nanoscale PhysicsCondensed matter physicsMaterials Science (cond-mat.mtrl-sci)021001 nanoscience & nanotechnology530 PhysikOrientation (vector space)Domain wall (magnetism)visual_artvisual_art.visual_art_mediumCondensed Matter::Strongly Correlated Electrons0210 nano-technologyQuantum Physics (quant-ph)
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Magnetoresistance effects in the metallic antiferromagnet Mn$_2$Au

2019

In antiferromagnetic spintronics, it is essential to separate the resistance modifications of purely magnetic origin from other effects generated by current pulses intended to switch the N\'eel vector. We investigate the magnetoresistance effects resulting from magnetic field induced reorientations of the staggered magnetization of epitaxial antiferromagnetic Mn2Au(001) thin films. The samples were exposed to 60 T magnetic field pulses along different crystallographic in-plane directions of Mn2Au(001), while their resistance was measured. For the staggered magnetization aligned via a spin-flop transition parallel to the easy [110]-direction, an ansiotropic magnetoresistance of -0.15 % was m…

Magnetoresistance530 PhysicsGeneral Physics and AstronomyFOS: Physical sciences02 engineering and technologyEpitaxy01 natural sciencesMagnetizationCondensed Matter::Materials Science0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)AntiferromagnetismThin film010306 general physicsPhysicsCondensed Matter - Materials ScienceAnnihilationSpintronicsCondensed matter physicsCondensed Matter - Mesoscale and Nanoscale PhysicsMaterials Science (cond-mat.mtrl-sci)530 Physik021001 nanoscience & nanotechnologyMagnetic fieldCondensed Matter::Strongly Correlated Electrons0210 nano-technology
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Calculation of surface quantum levels in tellurium inversion layers

1978

MagnetoresistanceChemistrychemistry.chemical_elementInversion (meteorology)Atomic physicsTelluriumConduction bandQuantumJournal de Physique
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Magnetoresistance studies of the ferromagnetic molecular metal (BEDT-TTF)3[MnCr(C2O4)3] under pressure

2003

(BEDT-TTF)3[MnCr(C2O4)3] is the first ferromagnetic molecular metal, in which organic layers of BEDT-TTF alternate with infinite layers of the bimetallic oxalate complex [MnCr(C2O4)3]-. While the bimetallic layer undergoes a magnetic phase transition into a canted ferromagnetic state at 5.5 K, the metallic character of the conductivity is not affected by the magnetic transition [Nature 408 (2000) 447]. We performed magnetoresistance measurements (B≤17 T) at low temperatures (T≥900 mK) and under hydrostatic pressures of up to 2.0 GPa. Oscillations in the magnetoresistance develop under pressure that can be interpreted as Shubnikov-de Haas oscillations, if an internal magnetic field is taken …

MagnetoresistanceCondensed matter physicsChemistryMagnetismMechanical EngineeringHydrostatic pressureMetals and AlloysConductivityCondensed Matter PhysicsThermal conductionShubnikov–de Haas effectElectronic Optical and Magnetic MaterialsMagnetic fieldFerromagnetismMechanics of MaterialsMaterials ChemistrySynthetic Metals
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Large negative magnetoresistance effects in Co2Cr0.6Fe0.4Al

2003

Abstract Materials, which display large changes in resistivity in response to an applied magnetic field (magnetoresistance) are currently of great interest due to their potential for applications in magnetic sensors, magnetic random access memories, and spintronics. Guided by striking features in the electronic structure of several magnetic compounds, we prepared the Heusler compound Co2Cr0.6Fe0.4Al. Based on our band structure calculations, we have chosen this composition in order to obtain a half-metallic ferromagnet with a van Hove singularity in the vicinity of the Fermi energy in the majority spin channel and a gap in the minority spin channel. We find a magnetoresistive effect of 30% …

MagnetoresistanceCondensed matter physicsSpintronicsChemistryVan Hove singularityengineering.materialCondensed Matter PhysicsHeusler compoundElectronic Optical and Magnetic MaterialsMagnetic fieldInorganic ChemistryCondensed Matter::Materials ScienceParamagnetismMagnetizationFerromagnetismMaterials ChemistryCeramics and CompositesengineeringCondensed Matter::Strongly Correlated ElectronsPhysical and Theoretical ChemistryJournal of Solid State Chemistry
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A magnetic skyrmion as a non-linear resistive element - a potential building block for reservoir computing

2017

Inspired by the human brain, there is a strong effort to find alternative models of information processing capable of imitating the high energy efficiency of neuromorphic information processing. One possible realization of cognitive computing are reservoir computing networks. These networks are built out of non-linear resistive elements which are recursively connected. We propose that a skyrmion network embedded in frustrated magnetic films may provide a suitable physical implementation for reservoir computing applications. The significant key ingredient of such a network is a two-terminal device with non-linear voltage characteristics originating from single-layer magnetoresistive effects,…

MagnetoresistanceGeneral Physics and AstronomyFOS: Physical sciences02 engineering and technologyMagnetic skyrmionTopology01 natural sciencesCondensed Matter - Strongly Correlated Electrons0103 physical sciences010306 general physicsBlock (data storage)PhysicsResistive touchscreenStrongly Correlated Electrons (cond-mat.str-el)SkyrmionReservoir computingDisordered Systems and Neural Networks (cond-mat.dis-nn)Condensed Matter - Disordered Systems and Neural NetworksPhysik (inkl. Astronomie)021001 nanoscience & nanotechnologyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter - Other Condensed MatterNeuromorphic engineering0210 nano-technologyRealization (systems)Other Condensed Matter (cond-mat.other)
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Exchange bias in epitaxial Mn2Au (0 0 1)/Fe (0 0 1) bilayers

2019

Materials scienceAcoustics and UltrasonicsCondensed matter physicsMagnetoresistanceMagnetismCondensed Matter PhysicsEpitaxySurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsTunnel effectExchange biasElectrical resistivity and conductivityAntiferromagnetismGold alloysJournal of Physics D: Applied Physics
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Heisenberg Exchange and Dzyaloshinskii–Moriya Interaction in Ultrathin Pt(W)/CoFeB Single and Multilayers

2021

We present results of the analysis of Brillouin light-scattering (BLS) measurements of spin waves performed on ultrathin single and multirepeat CoFeB layers with adjacent heavy metal layers. From a detailed study of the spin-wave dispersion relation, we independently extract the Heisenberg exchange interaction (also referred to as symmetric exchange interaction), the Dzyaloshinskii–Moriya interaction (DMI, also referred to as antisymmetric exchange interaction), and the anisotropy field. We find a large DMI in CoFeB thin films adjacent to a Pt layer and nearly vanishing DMI for CoFeB films adjacent to a W layer. Furthermore, the influence of the dipolar interaction on the dispersion relatio…

Materials scienceAntisymmetric exchangeCondensed matter physicsMagnetoresistanceExchange interactionElectronic Optical and Magnetic MaterialsBrillouin zoneCondensed Matter::Materials ScienceSpin waveDispersion relationDispersion (optics)Condensed Matter::Strongly Correlated ElectronsElectrical and Electronic EngineeringAnisotropyIEEE Transactions on Magnetics
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Pulsed laser deposition of Sr2FeMoO6 thin films

2005

Abstract The effect of various deposition conditions and after-growth protocols on the magnetic and transport properties of Sr 2 FeMoO 6 films has been explored. It is found that the saturation magnetization and the magnetoresistance (MR) are dominated by the degree of cationic order, and the strain effects are clearly evidenced in a lower T C . The after-growth annealing of the films and the deposition of a buffer layer has been found to relax the film strains. This translates into a clear increase of the measured low-field magnetoresistance ratios.

Materials scienceColossal magnetoresistanceCondensed matter physicsMagnetoresistanceAnnealing (metallurgy)Cationic polymerizationDouble perovskiteThin filmCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsPulsed laser depositionJournal of Magnetism and Magnetic Materials
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High-temperature transport properties of La0.67Ca0.33MnO3 films

1999

Abstract The giant negative magnetoresistance in manganites has been investigated from the Curie temperature T c up to 600 K (2.6 T c ) in magnetic fields up to 8 T. Nonadiabatic small polaron hopping can successfully describe the temperature dependence of the resistivity. The magnetic field influence on the activation energy is explained by the interaction of unclustered ions with small spin clusters of four ions.

Materials scienceColossal magnetoresistanceCondensed matter physicsMagnetoresistanceGiant magnetoresistanceActivation energyCondensed Matter PhysicsPolaronElectronic Optical and Magnetic MaterialsMagnetic fieldCondensed Matter::Materials ScienceElectrical resistivity and conductivityCurie temperatureCondensed Matter::Strongly Correlated ElectronsJournal of Magnetism and Magnetic Materials
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