Search results for "MATTER"
showing 10 items of 16762 documents
HCl gas gettering of low-cost silicon
2013
HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d transition metals in high concentrations. Etching of silicon by HCl gas occurs during HCl gas gettering above a certain onset temperature. The etching rate as well as the gettering efficiency was experimentally determined as a function of the gettering temperature, using UMG silicon wafers. The activation energy of the etching reaction by HCl gas was calculated from the obtained data. The gettering efficiency was determined by analyzing Ni as a representativ…
Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique
2018
Abstract Silicon single crystal growth by the Czochralski (CZ) technique is studied numerically using non-stationary mathematical models which allow to predict the evolution of the CZ system in time, including Dash neck, cone and cylindrical growth stages. The focus is on the point defect dynamics, also considering the effect of the thermal stresses. During the cylindrical stage, the crystal pull rate is temporarily reduced as in experiments by Abe et al. The crystal radius and heater power change is explicitly considered in the calculations for crystal diameters of 50, 100 and 200 mm and the agreement with experiments is discussed.
3D modeling of growth ridge and edge facet formation in 〈100〉 floating zone silicon crystal growth process
2019
Abstract A 3D quasi-stationary model for crystal ridge formation in FZ crystal growth systems for silicon is presented. Heat transfer equations for the melt and crystal are solved, and an anisotropic crystal growth model together with a free surface shape solver is used to model the facet growth and ridge formation. The simulation results for 4″ and 5″ crystals are presented and compared to experimental ridge shape data.
Effect of process parameters and crystal orientation on 3D anisotropic stress during CZ and FZ growth of silicon
2017
Abstract Simulations of 3D anisotropic stress are carried out in and oriented Si crystals grown by FZ and CZ processes for different diameters, growth rates and process stages. Temperature dependent elastic constants and thermal expansion coefficients are used in the FE simulations. The von Mises stress at the triple point line is ~5–11% higher in crystals compared to crystals. The process parameters have a larger effect on the von Mises stress than the crystal orientation. Generally, the crystal has a higher azimuthal variation of stress along the triple point line (~8%) than the crystal (~2%). The presence of a crystal ridge increases the stress beside the ridge and decreases it on the ri…
Mathematical modelling of the feed rod shape in floating zone silicon crystal growth
2017
Abstract A three-dimensional (3D) transient multi-physical model of the feed rod melting in the floating zone (FZ) silicon single-crystal growth process is presented. Coupled temperature, electromagnetic (EM), and melt film simulations are performed for a 4 inch FZ system, and the time evolution of the open melting front is studied. The 3D model uses phase boundaries and parameters from a converged solution of a quasi-stationary axisymmetric (2D) model of the FZ system as initial conditions for the time dependent simulations. A parameter study with different feed rod rotation, crystal pull rates and widths of the inductor main slit is carried out to analyse their influence on the evolution …
Validation of a 3D mathematical model for feed rod melting during floating zone Si crystal growth
2019
Abstract A mathematical model of global 3D heat transfer in floating zone silicon single crystal growth process is used to predict the shape of the open melting front of the feed rod. The model is validated using measurement data from research-scale growth experiments. Shape profiles of the open melting front are obtained from the feed rod leftover using a movable dial gauge. Azimuthal asymmetry of the rim of the open melting front is revealed in both simulations and measurements, quantitatively indicating the influence of the main slit of the inductor.
Thermal stability of magnetic characteristics of Co/Ag/Fe and Co/Ag/Fe20Ni80 spin-valve structures
2017
Abstract We investigated the thermal stability of magnetic characteristics of Co/Ag/Fe and Co/Ag/Fe 20 Ni 80 spin-valve structures. Thin film systems were obtained with the help of sputtering method. For the first type of systems two particular thicknesses ( d ML = 3 and 20 nm) and different disposition of magnetic layers (ML) were used. For the second type different thickness of Ag ( d NML ) spacer layer was used. The research of the crystal structure was performed with the transmission electron microscope. The results demonstrate that every investigated as-deposited sample does not include solid solutions, intermetallic compounds or impurities. It has been found that among the spin-valve…
Gel combustion synthesis and magnetic properties of CoFe2O4, ZnFe2O4, and MgFe2O4 using 6-aminohexanoic acid as a new fuel
2020
Abstract For the first time, 6-aminohexanoic acid is used as an alternative fuel in the synthesis of the spinel ferrites with compositions CoFe2O4, ZnFe2O4 and MgFe2O4 using gel combustion synthesis with different oxidizer-to-fuel (O/F) ratios. The gel precursors were studied by differential thermal analysis and thermogravimetry (DTA/TG), which showed that the ignition temperature depends on the gel precursor, being around 230 °C, 130 °C and 275 °C for CoFe2O4, ZnFe2O4, and MgFe2O4, respectively. These results showed than the 6-aminohexanoic acid has an ignition temperature lower than the urea and the citric acid when were used in the synthesis of the spinel ferrites by gel combustion. More…
Half-Heusler compounds: novel materials for energy and spintronic applications
2012
Half-Heusler compounds are an impressive class of materials with a huge potential for different applications such as future energy applications and for spintronics. The semiconducting Heusler compounds can be identified by the number of valence electrons. The band gap can be tuned between 0 and 4 eV by the electronegativity difference of the constituents. Magnetism can be introduced in these compounds by using rare-earth elements, manganese or ‘electron’ doping. Thus, there is a great interest in the fields of thermoelectrics, solar cells and diluted magnetic semiconductors. The combination of different properties such as superconductivity and topological edge states leads to new multifunct…
Effect of oxidation post treatments on TiO2 coating manufactured using reactive very low-pressure plasma spraying (R-VLPPS)
2020
Abstract TiO2 coatings manufactured using reactive very low-pressure plasma spraying (R-VLPPS) were analyzed in different regions related to their position compared to the plasma flame. For that, a screen was used in order to hide an area of the substrate from the direct plasma flux. The coating morphology changed from quasi lamellar structure to highly vapor structure and coatings exhibited obvious modifications in terms of phases and mechanical properties. The effect of oxidation post treatment on the as sprayed coating was then studied by selecting two methods: in situ oxidation post treatment and classical thermal treatment. The two post treatments provided an increase of the main rutil…