Search results for "MOSFET"
showing 10 items of 45 documents
Parasitic Bipolar Action in SiC Power MOSFETs Demonstrated by Two-Photon Laser Experiment
2018
A two-photon absorption technique is explored for Silicon carbide power MOSFETs and power junction barrier Schottky diodes using a pulsed laser. The similarities in design between the specific MOSFETs and diodes tested permit using mechanisms existing in the different structures as explanation for observed current variation with laser position. The diode shows variation in average current with change in laser depth only, whereas the MOSFET shows variation both with shifts in depth and shifts in position across the striped geometry of the device. The variation is explained to be due to bipolar amplification of the charge carriers generated in the MOSFET when a pulse focus includes a channel …
SiC Power Switches Evaluation for Space Applications Requirements
2016
We have evaluated several SiC power switches available on the market, by defining and performing a global test campaign oriented to Space applications requirements, in order to define their main benefits but also the limits of current SiC technology. This allowed to identify a number of target applications where SiC could be used as a technology push for a new generation of space electronics units. Silicon devices qualified for space systems above 600V for the switches and 1200V for the rectifiers are not available due to performances limitations of Si. Among the typical static and dynamic characterization, we have performed temperature and power stress and HTRB tests. More remarkably, we h…
SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark
2019
Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit ch…
SiC Based Latching Current Limiter for High Voltage Space Power Distribution Systems
2018
This study presents a novel Latching Current Limiter topology, based on a N-channel Silicon Carbide (SiC) MOSFET as the main switching element. The design has been carried out using only discrete components, without digital controllers. This design has been validated by simulation and with a prototype. Tests have been performed at 1000V, modifying the limitation times, current-limiting values and eventually checking the proper operation of the system.
A Low-Power Fully-Mosfet Voltage Reference Generator for 90 nm CMOS Technology
2006
An integrated voltage reference generator, designed for being incorporated in standard 90-nm CMOS technology flash memories, is described in this paper. A fully MOSFET based approach, using also subthreshold operated devices, has been adopted in order to achieve low-voltage and low-power requirements and to overcome the difficulties of conventional band-gap reference circuits. The proposed circuit, based on current signals, internally generates two currents with opposite dependence on temperature. The two currents are added, thus canceling almost completely temperature dependence, and then linearly converted into the output voltage. For a temperature variation between -20degC and 90degC, th…
The "Livio Scarsi" X-Ray Facility at University of Palermo for Device Testing
2015
In this work, we report on the characteristics of the Livio Scarsi X-ray facility at University of Palermo. The facility is able to produce low energy X rays, within the energy range of 0.1-60 keV, with fluence rates ranging from 105-108 photons/mm2 s. The laboratory is equipped with an innovative digital detection system, based on semiconductor detectors (Si and CdTe detectors), able to provide accurate and precise estimation of the fluence rate, the energy and the exposure of X rays, even at high counting rate conditions. Instrumentation for electrical characterization (DC-AC) of semiconductor devices, for both off-line and on-line (i.e. during the irradiation) measurements, is also avail…
Automated Calculation Method to Determine the Output Power Based on the Frequency for Induction Heating IGBT Parallel Inverter
2007
The fact that some inverter topologies used in induction heating applications allow the soft switching working operation lets the progressive replacement of the MOSFET with the IGBT in high power inverters. This is due to two main reasons, the former is the IGBT reliability and the latter is the ratio defined as the price of the component per output power. In this article an automated method to determine the output power based on the frequency of an inverter build with different IGBT is described. To carry out this method is necessary to define the power cycle and to develop the calculation process which determines the energy losses in the working conditions of the resonant parallel inverte…
Finite-element Discretizations of Semiconductor Energy-transport Equations
2003
Energy-transport models describe the flow of electrons in a semiconductor crystal. Several formulations of these models, in the primal or dual entropy variables or in the drift-diffusion-type variables, are reviewed. A numerical discretization of the steady-state drift-diffusion-type formulation using mixed-hybrid finite elements introduced by Marini and Pietra is presented. The scheme is first applied to the simulation of a one-dimensional ballistic diode with non-parabolic band diagrams. Then a two-dimensional deep submicron MOSFET device with parabolic bands is simulated, using an adaptively refined mesh.
A demagnetization circuit for forward converters
2009
This paper presents a demagnetization circuit able to operate the forward converter with an higher efficiency and with a wider input range. In particular, by the means of few added components, the magnetizing energy and the leakage one are continuously recovered, and the transformer reset and the primary mosfet OFF voltage clamp to the input, both under steady state and transient operations, are provided. The reduced voltage stress allows the converter to operate with a duty extended to unity over the typical 70% limit of the Active Clamp topology, with smaller output inductance, better converter dynamics and wider input range. Furthermore, thanks to this technique, by employing a duty appr…
Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests
2021
High temperature reverse-bias (HTRB), High temperature gate-bias (HTGB) tests and electrical DC characterization were performed on planar-SiC power MOSFETs which survived to accelerated neutron irradiation tests carried out at ChipIr-ISIS (Didcot, UK) facility, with terrestrial neutrons. The neutron test campaigns on the SiC power MOSFETs (manufactered by ST) were conducted on the same wafer lot devices by STMicroelectronics and Airbus, with different neutron tester systems. HTGB and HTRB tests, which characterise gate-oxide integrity and junction robustness, show no difference between the non irradiated devices and those which survived to the neutron irradiation tests, with neutron fluence…