Search results for "Magnetron sputtering"
showing 7 items of 17 documents
Structural and electrical properties of magnetron sputtered Ti(ON) thin films:The case of TiN doped in situ with oxygen.
2009
International audience; Incorporation of oxygen into TiN lattice results in formation of titanium oxynitrides, TiOxNy that have become particularly interesting for photocatalytic applications. Elaboration as well as characterization of TiN and in situ oxygen-doped thin films is the subject of this paper. Thin films, 250–320nm in thickness, have been deposited by dc-pulsed magnetron reactive sputtering from Ti target under controllable gas flows of Ar, N2 and O2. Optical monitoring of Ti plasma emission line at = 500nm has been implemented in order to stabilize the sputtering rate. Scanning electron microscopy (SEM), X-ray diffraction in grazing incidence (GIXRD), micro-Raman spectroscopy, X…
Magnetron sputtering fabrication of α-Al2O3:Cr powders and their thermoluminescence properties
2018
The authors gratefully acknowledge the financial support for this work from research grant ERA.NET RUS Plus Nr.609556.
Étude par microscopie électronique et spectroscopie de films minces catalytiques pour micro piles à combustibles
2016
Předložená dizertační práce se zabývá studiem nových katalyzátorů na bázi kov-oxid vhodných pro použití v palivových článcích na straně anody. Platinou dopovaný oxid ceru připravený magnetronovým naprašováním ve formě tenkých vrstev na uhlíkových mezivrstvách nesených křemíkovým substrátem byl zkoumán prostřednictvím mikroskopických a spektroskopických metod. Vliv složení uhlíkového nosiče (a-C a CNx filmy), depozičního času CeOx vrstvy a dalších depozičních parametrů, např. depoziční rychlosti, složení pracovní atmosféry a Pt koncentrace na morfologii Pt-CeOx vrstev byl studován převážně pomocí transmisní elektronové mikroskopie (TEM). Získané výsledky ukazují, že vhodnou kombinací depozič…
Size dependent light absorption modulation and enhanced carrier transport in germanium quantum dots devices
2015
Quantum confinement in closely packed arrays of Ge quantum dots (QDs) was studied for energy applications. In this work, we report an efficient tuning mechanism of the light harvesting and detection of Ge QDs. Thin films of SiGeO alloys, produced by rf-magnetron sputtering, were annealed at 600 degrees C in N-2 to induce precipitation of small amorphous Ge QDs into the oxide matrix. Varying the Ge content, the QD size was tailored between 2 and 4 nm, as measured by high resolution transmission electron microscopy. X-ray photoelectron spectroscopy (XPS) measurements indicate the formation of pure SiO2, as well as the presence of a sub-stoichiometric Ge oxide shell at the QD interface. Light …
Optical Plasma Diagnostics During Reactive Magnetron Sputtering
2008
TCO/Ag/TCO transparent electrodes for solar cells application
2014
Among transparent electrodes, transparent conductive oxides (TCO)/metal/TCO structures can achieve optical and electrical performances comparable to, or better than, single TCO layers and very thin metallic films. In this work, we report on thin multilayers based on aluminum zinc oxide (AZO), indium tin oxide (ITO) and Ag deposited by RF magnetron sputtering on soda lime glass at room temperature. The TCO/Ag/TCO structures with thicknesses of about 50/10/50 nm were deposited with all combinations of AZO and ITO as top and bottom layers. While the electrical conductivity is dominated by the Ag intralayer irrespective of the TCO nature, the optical transmissions show a dependence on the natur…
Growth of metal/oxide periodic multilayer : relation between structure and electrical behaviour in systems based on titanium and tungsten
2014
Periodic multilayers have found many applications in the fields of optics, mechanics or electronics. However, few studies focus on the electrical responses of the metal/oxide periodic structures versus temperature. The interest of this work was focused on the characterization of the multilayers and their electrical properties versus temperature. In TiO/Ti/TiO/TiO2 and WO/W/WO/WO3 systems produced by the reactive gas pulsing process, sample structures were established by transmission electron microscopy for sublayers thicknesses between 1.3 and 50.8 nm. Then, this study highlights a modification of conventional electrical behavior versus temperature. An empirical relationship was established…