Search results for "Memristor"
showing 10 items of 43 documents
Bifurcation analysis of a TaO memristor model
2019
This paper presents a study of bifurcation in the time-averaged dynamics of TaO memristors driven by narrow pulses of alternating polarities. The analysis, based on a physics-inspired model, focuses on the stable fixed points and on how these are affected by the pulse parameters. Our main finding is the identification of a driving regime when two stable fixed points exist simultaneously. To the best of our knowledge, such bistability is identified in a single memristor for the first time. This result can be readily tested experimentally, and is expected to be useful in future memristor circuit designs.
uMemristorToolbox: Open source framework to control memristors in Unity for ternary applications
2020
This paper presents uMemristorToolbox, a novel open source framework that reads and writes non-volatile ternary states to memristors. The Unity (C#) framework is a port of the open source Java project Memristor-Discovery and adds a closed-loop ternary memory controller to enable both PC and real-time embedded ternary applications. We validate the closed-loop ternary memory controller in an embedded system case study with 16 M+SDC Tungsten dopant memristors. We measure an average switching speed of 3 Hz, worst case energy usage of 1 μW per switch, 0.03% random write error and no decay in (non-volatile) state retention after 15 minutes. We conclude with observations and open questions when wo…
Resistive switching behaviour in ZnO and VO 2 memristors grown by pulsed laser deposition
2014
The resistive switching behaviour observed in microscale memristors based on laser ablated ZnO and VO 2 is reported. A comparison between the two materials is reported against an active device size. The results show that devices up to 300 × 300 μm 2 exhibit a memristive behaviour regardless of the device size, and 100 × 100 μm 2 ZnO-based memristors have the best resistance off/on ratio.
Influence of oxygen ion elementary diffusion jumps on the electron current through the conductive filament in yttria stabilized zirconia nanometer-si…
2021
Abstract The structure of the electron current through an individual filament of a nanometer-sized virtual memristor consisting of a contact of a conductive atomic force microscope probe to an yttria stabilized zirconia (YSZ) thin film deposited on a conductive substrate is investigated. Usually, such investigation is performed by the analysis of the waveform of this current with the aim to extract the random telegraph noise (RTN). Here, we suggest a new indirect method, which is based on the measurement of the spectrum of the low-frequency flicker noise in this current without extracting the RTN, taking into account the geometrical parameters of the filament. We propose that the flicker no…
TiO2 in memristors and resistive random access memory devices
2021
Abstract One of the most recent applications of TiO2 thin films is as an oxide layer in memristors, electronic devices considered as one of the most promising nonvolatile memories and as possible building units for neuromorphic computing. This chapter aims to describe several fabrication ways, either (electro)chemical or physical methods, of TiO2 thin films and to highlight the relationship between method and layer properties. Some fundamentals on the mechanism of memristors’ operation, that is, resistive switching in oxide thin films, will be given, classifying the different types of devices based on the used electrode materials and underlying physicochemical processes. Finally, it will be…
Resistive switching in microscale anodic titanium dioxide-based memristors
2018
Licence CC BY-NC-ND The potentiality of anodic TiO2 as an oxide material for the realization of resistive switching memory cells has been explored in this paper. Cu/anodic-TiO2/Ti memristors of different sizes, ranging from 1 × 1 μm2 to 10 × 10 μm2 have been fabricated and characterized. The oxide films were grown by anodizing Ti films, using three different process conditions. Measured IV curves have shown similar asymmetric bipolar hysteresis behaviors in all the tested devices, with a gradual switching from the high resistance state to the low resistance state and vice versa, and a R_OFF/R_ON ratio of 80 for the thickest oxide film devices.
Space charge limited current mechanism in Bi2S3 nanowires
2016
We report on the charge transport properties of individual Bi2S3 nanowires grown within the pores of anodized aluminum oxide templates. The mean pore diameter was 80 nm. Space charge limited current is the dominating conduction mechanism at temperatures below 160 K. Characteristic parameters of nanowires, such as trap concentration and trap characteristic energy, were estimated from current-voltage characteristics at several temperatures.
Stochastic resonance in a metal-oxide memristive device
2021
Abstract The stochastic resonance phenomenon has been studied experimentally and theoretically for a state-of-art metal-oxide memristive device based on yttria-stabilized zirconium dioxide and tantalum pentoxide, which exhibits bipolar filamentary resistive switching of anionic type. The effect of white Gaussian noise superimposed on the sub-threshold sinusoidal driving signal is analyzed through the time series statistics of the resistive switching parameters, the spectral response to a periodic perturbation and the signal-to-noise ratio at the output of the nonlinear system. The stabilized resistive switching and the increased memristance response are revealed in the observed regularities…
Fabrication and characterization of microscale HfO2-based Memristors
2017
Memristors are metal/insulator/metal devices whose resistance can be switched between two different states (i.e. the low resistive state LRS, and the high resistive state, HRS) by applying a proper voltage value over the two metal contacts [1], [2]. Their simple structure makes memristors prone to extreme down scaling and 3-D stacking potentiality, and excellent compatibility with the complementary metal-oxide-semiconductor (CMOS) technology. Moreover, because of their low power consumption and high speed, memristors are rightly considered the elemental bricks for a next generation of high-density nonvolatile memories. HfO2 has attracted much attention as an oxide material for memristor app…
Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise
2022
The effects of external digitally synthesized Gaussian noise on the resistive state relaxation time of a ZrO2(Y)-based memristive device when switching from a low resistance state to a high resistance state have been experimentally investigated. A nonmonotonic dependence of the resistive state relaxation time on the external noise intensity is found. This behavior is interpreted as a manifestation of the noise-enhanced stability effect previously observed in various complex systems with metastable states. It is shown that the experimental results agree satisfactorily with the theoretical ones. The presented results indicate the constructive role of external noise and its possible use as a m…