Search results for "Mesoscopic System"
showing 10 items of 587 documents
Temperature dependence of the E2h phonon mode of wurtzite GaN/AlN quantum dots
2008
Raman scattering has been used to study the temperature dependence of the frequency and linewidth of the E2h phonon mode of GaN/AlN quantum dot stacks grown on 6H-SiC. The evolution of the nonpolar phonon mode was analyzed in the temperature range from 80 to 655 K for both quantum dots and barrier materials. The experimental results are interpreted by comparison with a model that takes into account symmetric phonon decay and the different thermal expansions of the constituents of the heterostructure. We find a small increase in the anharmonic parameters of the phonon modes in the heterostructure with respect to bulk. jorbumar@alumni.uv.es Alberto.Garcia@uv.es Ana.Cros@uv.es
Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness
2008
http://link.aip.org/link/?JAPIAU/104/033523/1
Oscillator strength reduction induced by external electric fields in self-assembled quantum dots and rings
2007
We have carried out continuous wave and time resolved photoluminescence experiments in self-assembled In(Ga)As quantum dots and quantum rings embedded in field effect structure devices. In both kinds of nanostructures, we find a noticeable increase of the exciton radiative lifetime with the external voltage bias that must be attributed to the field-induced polarizability of the confined electron hole pair. The interplay between the exciton radiative recombination and the electronic carrier tunneling in the presence of a stationary electric field is therefore investigated and compared with a numerical calculation based on the effective mass approximation.
Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells
1998
9 páginas, 11 figuras.
Experimental investigation of the kink effect and the low frequency noise properties in pseudomorphic HEMT’s
2005
The kink effect in low-noise pseudomorphic (AlGaAs/InGaAs) HEMT's has been examined in detail by investigating the steady-state and pulsed I-V characteristics, the behavior of the output conductance dispersion and the performance of the gate leakage current to understand its origin. No clear evidence of impact ionization occurrence in the InGaAs channel at kink bias conditions (V-DS.kink = 1.5 V) has been found, thus suggesting that the predominant mechanism should be attributed to trap-related phenomena. A significant rise of the gate current has been found at very high drain voltages (far from V-DS.kink) associated with low drain current values which is probably due to impact ionization o…
Skyrmion-number dependence of spin-transfer torque on magnetic bubbles
2015
We theoretically study the skyrmion-number dependence of spin-transfer torque acting on magnetic bubbles. The skymrion number of magnetic bubbles can take any integer value depending on the magnetic profile on its circumference and the size of the bubble. We find that the transverse motion of a bubble with respect to the charge current is greatly suppressed as the absolute value of the skyrmion number departs from unity, whereas the longitudinal motion is less sensitive.
"Table 9" of "Higher harmonic anisotropic flow measurements of charged particles in Pb-Pb collisions at sqrt(s_{(NN)}) = 2.76 TeV"
2013
v3{SP}/epsilon(CGC) (blue filled squares).
Charge transport through spin-polarized tunnel junction between two spin-split superconductors
2019
We investigate transport properties of junctions between two spin-split superconductors linked by a spin-polarized tunneling barrier. The spin-splitting fields in the superconductors (S) are induced by adjacent ferromagnetic insulating (FI) layers with arbitrary magnetization. The aim of this study is twofold: On the one hand, we present a theoretical framework based on the quasiclassical Green's functions to calculate the Josephson and quasiparticle current through the junctions in terms of the different parameters characterizing it. Our theory predicts qualitative new results for the tunneling differential conductance, $dI/dV$, when the spin-splitting fields of the two superconductors are…
High dynamic resistance elements based on a Josephson junction array
2020
A chain of superconductor–insulator–superconductor junctions based on Al–AlOx–Al nanostructures and fabricated using conventional lift-off lithography techniques was measured at ultra-low temperatures. At zero magnetic field, the low current bias dynamic resistance can reach values of ≈1011 Ω. It was demonstrated that the system can provide a decent quality current biasing circuit, enabling the observation of Coulomb blockade and Bloch oscillations in ultra-narrow Ti nanowires associated with the quantum phase-slip effect.
Time Evolution of two distant SQUID rings irradiated with entangled electromagnetic field
2006
Two distant mesoscopic SQUID rings are irradiated with two mode microwaves produced by the same source. The time evolution of the system is studied. The two microwave modes are correlated. It is shown that the currents tunnelling through the Josephson junctions in the distant rings, are also correlated.