Search results for "NANOWIRE"
showing 10 items of 382 documents
Optical properties of ZnO deposited by atomic layer deposition (ALD) on Si nanowires
2018
International audience; In this work, we report proof-of-concept results on the synthesis of Si core/ ZnO shell nanowires (SiNWs/ZnO) by combining nanosphere lithography (NSL), metal assisted chemical etching (MACE) and atomic layer deposition (ALD). The structural properties of the SiNWs/ZnO nanostructures prepared were investigated by X-ray diffraction, Raman spectroscopy, scanning and transmission electron microscopies. The X-ray diffraction analysis revealed that all samples have a hexagonal wurtzite structure. The grain sizes are found to be in the range of 7-14 nm. The optical properties of the samples were investigated using reflectance and photoluminescence spectroscopy. The study o…
Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy.
2019
International audience; The growth of GaN on graphene by molecular beam epitaxy was investigated. The most stable epitaxial relationship, i.e. [00.1]-oriented grains, is obtained at high temperature and N-rich conditions, which match those for nanowire growth. Alternatively, at moderate temperature and Ga-rich conditions, several metastable orientations are observed at the nucleation stage, which evolve preferentially towards [00.1]-oriented grains. The dependence of the nucleation regime on growth conditions was assigned to Ga adatom kinetics. This statement is consistent with the calculated graphene/GaN in-plane lattice coincidence and supported by a combination of transmission electron m…
Physical properties and applications of InxGa1−xN nanowires
2014
We have successfully grown InxGa1−xN nanowires by plasma-assisted molecular beam epitaxy on silicon substrates. The alloy composition and crystal quality have been analyzed by Raman scattering, photoluminescence spectroscopy and x-ray fluorescence nanoprobe techniques. InxGa1−xN is an one-mode alloy, where the different optical modes have an intermediate frequency of that of pure InN and GaN. The sample composition can be derived from the Raman data. On the other hand, by using the optical gap provided by the emission spectra, we conclude that the samples have a lower Ga content than that provided by the Raman analysis. X-ray fluorescence maps and photoluminescence measured in single nanowi…
VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion.
2014
International audience; We report on the growth and microstructure analysis of high Cd content ZnCdO/ZnO multiple quantum wells (MQW) within a nanowire. Heterostructures consisting of ten wells with widths from 0.7 to 10nm are demonstrated, and show photoluminescence emissions ranging from 3.03 to 1.97eV. The wells with thicknesses⩽2nm have high radiative efficiencies compared to the thickest ones, consistent with the presence of quantum confinement. However, a nanometric analysis of the Cd profile along the heterostructures shows the presence of Cd diffusion from the ZnCdO well to the ZnO barrier. This phenomenon modifies the band structure and the optical properties of the heterostructure, an…
Acoustically driven photon antibunching in nanowires.
2011
The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited carriers, as well as to spatially control exciton recombination in GaAs-based nanowires (NWs) on a subns time scale. The experiments are carried out in core-shell NWs transferred to a SAW delay line on a LiNbO(3) crystal. Carriers generated in the NW by a focused laser spot are acoustically transferred to a second location, leading to the remote emission of subns light pulses synchronized with the SAW phase. The dynamics of the carrier transport, investigated using spatially and time-resolved photoluminescence, is well-reproduced by computer simulations. The high-frequency contactless …
Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition
2015
Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (Vo) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two Vo states was found to be sensitive to the ambient environment and to NR post-growth treatment. The largest transient was found in samples dried on a hot plate with a PL intensity decay time, in air only, of 23 and 80 s for the 2.25 and 2.03 eV peaks, respectively. Resistance measurements under UV exposure exhibited a transient behaviour in full agreement with the PL transient, indicating a clear role of atmospheric O-2 on the surface defect states. A model fo…
Optical Near-Field Properties of Lithographically Designed Metallic Nanoparticles
1999
ABSTRACTWe report on the experimental observation of localized surface plasmons sustained by small metallic particles using a photon scanning tunneling microscope (PSTM). The surface plasmons are excited in gold nanostructures tailored by electron beam lithography. The constant height operation of the PSTM allowed a direct comparison with theoretical computations of the distribution of the optical near-field intensity. Plasmon coupling above a chain of Au particles and electromagnetic energy transfer from a resonantly excited nanoparticle to a nanowire are demonstrated. Our experimental results appear to be in good agreement with theoretical computations based on the Green's Dyadic Techniqu…
Scanning optical microscopy modeling in nanoplasmonics
2012
International audience; One of the main purposes of nanoplasmonics is the miniaturization of optical and electro-optical components that could be integrable in coplanar geometry. In this context, we propose a numerical model of a polarized scanning optical microscope able to faithfully reproduce both photon luminescence and temperature distribution images associated with complex plasmonic structures. The images are computed, pixel by pixel, through a complete self-consistent scheme based on the Green dyadic functions (GDF) formalism. The basic principle consists in the numerical implementation of a realistic three-dimensional light beam acting as a virtual light tip able to probe the volume…
Electrical excitation of surface plasmons
2011
We exploit a plasmon mediated two-step momentum down-conversion scheme to convert low-energy tunneling electrons into propagating photons. Surface plasmon polaritons (SPPs) propagating along an extended gold nanowire are excited on one end by low-energy electron tunneling and are then converted to free-propagating photons at the other end. The separation of excitation and outcoupling proves that tunneling electrons excite gap plasmons that subsequently couple to propagating plasmons. Our work shows that electron tunneling provides a nonoptical, voltage-controlled, and low-energy pathway for launching SPPs in nanostructures, such as plasmonic waveguides.
From kinetic to collective behavior in thermal transport on semiconductors and semiconductor nanostructures
2013
We present a model which deepens into the role that normal scattering has on the thermal conductivity in semiconductor bulk, micro and nanoscale samples. Thermal conductivity as a function of the temperature undergoes a smooth transition from a kinetic to a collective regime that depends on the importance of normal scattering events. We demonstrate that in this transition, the key point to fit experimental data is changing the way to perform the average on the scattering rates. We apply the model to bulk Si with different isotopic compositions obtaining an accurate fit. Then we calculate the thermal conductivity of Si thin films and nanowires by only introducing the effective size as additi…