Search results for "NOS"
showing 10 items of 30869 documents
Experimental and numerical investigation of laboratory crystal growth furnace for the development of model-based control of CZ process
2019
Abstract The presented study is focused on laboratory Czochralski crystal growth experiments and their mathematical modelling. The developed small-scale CZ crystal growth furnace is described as well as the involved automation systems: crystal radius detection by image recognition, temperature sensors, adjustable heater power and crystal pull rate. The CZ-Trans program is used to model the experimental results – transient, 2D axisymmetric simulation software primarily used for modelling of the industrial-scale silicon crystal growth process. Poor agreement with the experimental results is reached; however, the proven ability to perform affordable, small-scale experiments and successfully mo…
Determination of refractive index of submicron-thick films using resonance shift in a four-layer slab waveguide
2017
The measurement of refractive index of very thin films at the order of ten to hundred nanometers is cumbersome and usually requires employing sophisticated techniques such as the spectral ellipsometry. In this paper we describe a simple contact method for measuring the refractive index of thin films. Here we have used the prism-coupling technique for characterizing samples prepared as four-layer slab waveguides. The waveguide resonance condition can be calculated by solving simple analytic transcendental equations for the slab waveguide. Then the captured mode position as a function of cladding thickness is used for probing the refractive index of cladding layer. We used indium-tin-oxide la…
Multi-pulse characterization of trapping/detrapping mechanisms in AlGaN/GaN high electromobility transistors
2019
GaN high-electro mobility transistors (HEMTs) are among the most promising candidates for use in high-power, high-frequency, and high-temperature electronics owing to their high electrical breakdown threshold and their high saturation electron velocity. The applications of these AlGaN/GaN HEMTs in power converters are limited by the surface trapping effects of drain-current collapse. Charge-trapping mechanisms affect the dynamic performance of all GaN HEMTs used in power switching applications. This study analyzes the dynamic resistance of GaN HEMTs and finds that the effects of dynamic resistance can be suppressed by controlling switching conditions and on-off cycles.
Crystalline phase detection in glass ceramics by EPR spectroscopy
2018
The advances of EPR spectroscopy for the detection of activators as well as determining their local structure in the crystalline phase of glass ceramics is considered. The feasibility of d-element (Mn2+, Cu2+) and f-element (Gd3+, Eu2+) ion probes for the investigation of glass ceramics is discussed. In the case of Mn2+, the information is obtained from the EPR spectrum superhyperfine structure, for Gd3+ and Eu2+ probes – from the EPR spectrum fine structure, whereas for Cu2+ ions the changes in the EPR spectrum shape could be useful. The examples of EPR spectra of the above-mentioned probes in oxyfluoride glass ceramics are illustrated. ----/ / /---- This is the preprint version of the fol…
Evaluation and Comparison of Novel Precursors for Atomic Layer Deposition of Nb2O5 Thin Films
2012
Atomic layer deposition (ALD) of Nb2O5 thin films was studied using three novel precursors, namely, tBuN═Nb(NEt2)3, tBuN═Nb(NMeEt)3, and tamylN═Nb(OtBu)3. These precursors are liquid at room temperature, present good volatility, and are reactive toward both water and ozone as the oxygen sources. The deposition temperature was varied from 150 to 375 °C. ALD-type saturative growth modes were confirmed at 275 °C for tBuN═Nb(NEt2)3 and tBuN═Nb(NMeEt)3 together with both oxygen sources. Constant growth rate was observed between a temperature regions of 150 and 325 °C. By contrast, amylN═Nb(OtBu)3 exhibited limited thermal stability and thus a saturative growth mode was not achieved. All films we…
Atomic Layer Deposition of Osmium
2011
Growth of osmium thin films and nanoparticles by atomic layer deposition is described. The Os thin films were successfully grown between 325 and 375 °C using osmocene and molecular oxygen as precursors. The films consisted of only Os metal as osmium oxides were not detected in X-ray diffraction measurements. Also the impurity contents of oxygen, carbon, and hydrogen were less than 1 at % each at all deposition temperatures. The long nucleation delay of the Os process facilitates either Os nanoparticle or thin film deposition. However, after the nucleation delay of about 350 cycles the film growth proceeded linearly with increasing number of deposition cycles. Also conformal growth of Os thi…
Photoelectron Emission from Metal Surfaces Induced by Radiation Emitted by a 14 GHz Electron Cyclotron Resonance Ion Source
2015
Photoelectron emission measurements have been performed using a room-temperature 14 GHz ECR ion source. It is shown that the photoelectron emission from Al, Cu, and stainless steel (SAE 304) surfaces, which are common plasma chamber materials, is predominantly caused by radiation emitted from plasma with energies between 8 eV and 1 keV. Characteristic X-ray emission and bremsstrahlung from plasma have a negligible contribution to the photoelectron emission. It is estimated from the measured data that the maximum conceivable photoelectron flux from plasma chamber walls is on the order of 10% of the estimated total electron losses from the plasma. peerReviewed
Atomic Layer Deposition of LiF Thin Films from Lithd, Mg(thd)2, and TiF4 Precursors
2013
Lithium fluoride is an interesting material because of its low refractive index and large band gap. Previously LiF thin films have been deposited mostly by physical methods. In this study a new way of depositing thin films of LiF using atomic layer deposition (ALD) is presented. Mg(thd)2, TiF4 and Lithd were used as precursors, and they produced crystalline LiF at a temperature range of 300–350 °C. The films were studied by UV–vis spectrometry, field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), atomic force microscopy (AFM), time-of-flight elastic recoil detection analysis (ToF-ERDA), and energy dispersive X-ray spectroscopy (EDX). In addition, film adhesion was t…
Quasi-static behaviour and damage assessment of flax/epoxy composites
2015
Experimental investigations were conducted on flax and E-glass fibres reinforced epoxy matrix composites subjected to quasi-static loadings. Flax/epoxy samples having [0]12, [90]12, [0/90]3S and [±45]3S stacking sequences, with a fibre volume fraction of 43% have been tested under tension, compression and in-plane shear loadings. Overall, the compression strength of glass/epoxy was 76% greater than for the flax/epoxy composite. The damage evolution of flax/epoxy of [0/90]3S and [±45]3S samples has been evaluated in terms of transverse crack densities with respect to the load increment. The crack density exhibited a classical “S” shaped pattern for [0/90]3S and linearly for [±45]3S specimens…
Measuring rain energy with the employment of “Arduino”
2016
This paper presents the performances of rainfall energy harvesting through the use of a piezoelectric transducer and an Arduino-based measuring system. Diverse studies agree on the possibility of generating electricity from rainfall, but to date, a study that can measure the quantity of energy produced during rainfall is still missing. The present study begins with results obtained from laboratory researchers using piezoelectric transducers and oscilloscopes — to measure the energy produced from a single raindrop — and concludes with an ad hoc Arduino-based measuring system, aimed at measuring the actual amount of electrical energy produced by a piezoelectric transducer that is exposed to r…