Search results for "Non-volatile"

showing 10 items of 24 documents

Online Management of Hybrid DRAM-NVMM Memory for HPC

2019

Non-volatile main memories (NVMMs) offer a comparable performance to DRAM, while requiring lower static power consumption and enabling higher densities. NVMM therefore can provide opportunities for improving both energy efficiency and costs of main memory. Previous hybrid main memory management approaches for HPC either do not consider the unique characteristics of NVMMs, depend on high profiling costs, or need source code modifications. In this paper, we investigate HPC applications' behaviors in the presence of NVMM as part of the main memory. By performing a comprehensive study of HPC applications and based on several key observations, we propose an online hybrid memory architecture for …

010302 applied physicsProfiling (computer programming)Source codebusiness.industryComputer sciencemedia_common.quotation_subject02 engineering and technology01 natural sciences020202 computer hardware & architectureNon-volatile memoryMemory managementEmbedded system0103 physical sciencesMemory architecture0202 electrical engineering electronic engineering information engineeringKey (cryptography)businessDrammedia_common2019 IEEE 26th International Conference on High Performance Computing, Data, and Analytics (HiPC)
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Influence of the exchange and correlation functional on the structure of amorphous InSb and In3SbTe2 compounds

2016

We have investigated the structural, vibrational, and electronic properties of the amorphous phase of InSb and In3SbTe2 compounds of interest for applications in phase change non-volatile memories. Models of the amorphous phase have been generated by quenching from the melt by molecular dynamics simulations based on density functional theory. In particular, we have studied the dependence of the structural properties on the choice of the exchange-correlation functional. It turns out that the use of the Becke-Lee-Yang-Parr functional provides models with a much larger fraction of In atoms in a tetrahedral bonding geometry with respect to previous results obtained with the most commonly used P…

10120 Department of Chemistrynon-volatile memoryYield (engineering)Theory of Condensed MatterGeneral Physics and Astronomy02 engineering and technologyElectronic structure01 natural sciencesMolecular dynamicsComputational chemistry540 Chemistry0103 physical sciencesPhysical and Theoretical Chemistry010306 general physicsamorphous materialFIS/03 - FISICA DELLA MATERIAQuenchingChemistry021001 nanoscience & nanotechnologyelectronic structure3100 General Physics and AstronomyAmorphous solidab-initio simulationChemical physicsMolecular vibrationTetrahedronDensity functional theory1606 Physical and Theoretical Chemistry0210 nano-technologyphase change material
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Characterization of the inter-annual, seasonal, and diurnal variations of condensation particle concentrations at Neumayer, Antarctica

2011

Continuous condensation particle (CP) observations were conducted from 1984 through 2009 at Neumayer Station under stringent contamination control. During this period, the CP concentration (median 258 cm<sup>−3</sup>) showed no significant long term trend but exhibited a pronounced seasonality characterized by a stepwise increase starting in September and reaching its annual maximum of around 10<sup>3</sup> cm<sup>−3</sup> in March. Minimum values below 10<sup>2</sup> cm<sup>–3</sup> were observed during June/July. Dedicated time series analyses in the time and frequency domain revealed no significant correlations between…

Atmospheric Sciencefood.ingredient010504 meteorology & atmospheric sciencesAtmospheric circulationaerosolnon-volatile particles010501 environmental sciencesAtmospheric sciences01 natural scienceslcsh:ChemistryfoodUltrafine particlecondensation particlesmedicine14. Life underwater0105 earth and related environmental sciencesVulcanian eruptionSea saltCondensationAtmosphärische SpurenstoffeNeumayerSeasonalitymedicine.diseaselcsh:QC1-999Aerosollcsh:QD1-99913. Climate actionClimatologyEnvironmental scienceParticlelcsh:PhysicsAtmospheric Chemistry and Physics
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Compact instrumentation for radiation tolerance test of flash memories in space environment

2010

Aim of this work is the description of a test equipment, designed to be integrated on board of a microsatellite, able to investigate the radiation tolerance of non-volatile memory arrays in a real flight experiment. An FPGA-based design was adopted to preserve a high flexibility degree. Besides standard Program/Read/Erase functions, additional features such as failure data screening and latch-up protection have been implemented. The instrument development phase generated, as a by-product, a non-rad-hard version of the instrument that allowed performing in-situ experiments using 60Co and 10 MeV Boron irradiation facilities on Ground. Preliminary measurement results are reported to show the i…

EngineeringTolerance analysisbusiness.industrySystem testingSettore ING-INF/01 - ElettronicaFlash memorySpace equipmentNon-volatile memoryNon-volatile memoryFPGA-based instrumentationRadiation hardneInstrumentation (computer programming)businessField-programmable gate arrayRadiation hardeningInstrumentationComputer hardwareSpace environment
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Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories?

2009

Atmospheric neutrons can interact with the matter inside a microelectronic chip and generate ionizing particles, which in turn can change the state of one or more memory bits [soft error (SE)]. In this letter, we show that SEs are possible in Flash memories, although with extremely low probabilities. While this problem will increase for future technologies, we do not expect SEs to be the reliability limiting factor for further floating gate scaling.

Engineeringbusiness.industryNAND FlashElectrical engineeringNAND gateIntegrated circuitCircuit reliabilityChipsingle event effectsFlash memoryElectronic Optical and Magnetic Materialslaw.inventionNon-volatile memorySoft errorlawLogic gateFloating gate memoriesElectronic engineeringradiation effectsElectrical and Electronic Engineeringbusinessradiation effects; Floating gate memories; single event effects; NAND Flash
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Sensory-active compounds influencing wine experts' and consumers' perception of red wine intrinsic quality

2015

© 2014 Elsevier Ltd. There is a lack of studies focusing on the chemical compounds involved in quality perception. The present work combines both sensory and chemical approaches with the final goal of evaluating the sensory-active compounds influencing wine experts' and consumers' perception of red wine quality. Perceived quality was categorised by 108 consumers and 119 experts according to four levels going from very low to very high quality. In parallel, samples were described by a descriptive trained panel and volatile and non-volatile chemicals with known sensory activity were quantified. Wines with higher concentrations of eugenol, E- and Z-whiskylactones and 4-ethylphenol (discussed i…

Fusel alcoholWine[ SDV.AEN ] Life Sciences [q-bio]/Food and Nutritionmedia_common.quotation_subjectVolatile phenols[ SDV.IDA ] Life Sciences [q-bio]/Food engineeringVolatilefood and beveragesWineSensory systemNon-volatileNorisoprenoidsQualitySensory activityPerception[SDV.IDA]Life Sciences [q-bio]/Food engineeringQuality (business)Food scienceBusiness[SDV.AEN]Life Sciences [q-bio]/Food and NutritionFood Sciencemedia_commonWine industryLWT - Food Science and Technology
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Comparison of TID response and SEE characterization of single- and multi-level high density NAND flash memories

2009

Heavy ion single-event measurements and total ionizing dose (TID) response for 8Gb commercial NAND flash memories are reported. Radiation results of multilevel flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories. The charge pump in this study survived up to 600 krads.

Hardware_MEMORYSTRUCTURESMaterials sciencebusiness.industryNAND gateFlash memoryNon-volatile memoryFlash (photography)Single event upsetAbsorbed doseComputer data storageCharge pumpElectronic engineeringOptoelectronicsbusiness2009 European Conference on Radiation and Its Effects on Components and Systems
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Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

2016

International audience; The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitry.

ImaginationNuclear and High Energy PhysicsHeavy ion radiationMaterials science130 nmmedia_common.quotation_subject[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]01 natural sciencesFluence[SPI]Engineering Sciences [physics]0103 physical sciencesStatic testingSensitivity (control systems)Electrical and Electronic Engineeringradiation testingSimulationmedia_common010302 applied physicssingle event upset (SEU)ta114ta213010308 nuclear & particles physicsbusiness.industrymultiple cell upset (MCU)FerroelectricityNon-volatile memoryRadiation testingFRAM130nm technologyNuclear Energy and EngineeringOptoelectronicsbusinessstatic and dynamic mode testingIEEE Transactions on Nuclear Science
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Improving Collective I/O Performance Using Non-volatile Memory Devices

2016

Collective I/O is a parallel I/O technique designed to deliver high performance data access to scientific applications running on high-end computing clusters. In collective I/O, write performance is highly dependent upon the storage system response time and limited by the slowest writer. The storage system response time in conjunction with the need for global synchronisation, required during every round of data exchange and write, severely impacts collective I/O performance. Future Exascale systems will have an increasing number of processor cores, while the number of storage servers will remain relatively small. Therefore, the storage system concurrency level will further increase, worseni…

Input/outputFile system020203 distributed computingMulti-core processorbusiness.industryComputer scienceConcurrency020206 networking & telecommunications02 engineering and technologycomputer.software_genreSupercomputerNon-volatile memoryMemory managementData accessServerComputer data storage0202 electrical engineering electronic engineering information engineeringbusinesscomputerComputer network2016 IEEE International Conference on Cluster Computing (CLUSTER)
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Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions

2015

The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of different test modes (static and dynamic) on this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry. Dynamic tests results show a high sensitivity of this memory to heavy-ions.

Ionizing radiation[PHYS]Physics [physics]010302 applied physicsRandom access memoryMaterials scienceHeavy ion radiationta114ta213010308 nuclear & particles physics01 natural sciencestest conditions[SPI.TRON]Engineering Sciences [physics]/ElectronicsNon-volatile memoryMultiple Cell Upset (MCU)FRAM0103 physical sciencesStatic testingElectronic engineeringSensitivity (control systems)radiation testing130nmSingle Event Upset (SEU)static and dynamic mode testingSimulation
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