Search results for "Optics"

showing 10 items of 10033 documents

X-Ray studies on optical and structural properties of ZnO nanostructured thin films

2006

Abstract X-ray absorption near-edge fine structure (XANES) studies have been carried out on nanostructured ZnO thin films prepared by atmospheric pressure chemical vapour deposition (APCVD). Films have been characterized by X-ray diffraction (XRD) and optical luminescence spectroscopy exciting with laser light (PL) or X-ray (XEOL). According to XRD measurements, all the APCVD samples reveal a highly (002) oriented crystalline structure. The samples have different thickness (less than 1 μm) and show significant shifts of the PL and XEOL bands in the visible region. Zn K-edge XANES spectra were recorded using synchrotron radiation at BM08 of ESRF (France), by detecting photoluminescence yield…

010302 applied physicsMaterials sciencePhotoluminescencebusiness.industryX-rayAnalytical chemistrySynchrotron radiation02 engineering and technologyChemical vapor deposition021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesXANESOptics0103 physical sciencesGeneral Materials ScienceElectrical and Electronic EngineeringThin film0210 nano-technologybusinessLuminescenceSpectroscopy
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Low-temperature luminescence of CdI2 under synchrotron radiation

2020

Synchrotron radiation is applied to study visible and UV luminescence spectra and their excitation spectra of undoped as well as In and Sb doped cadmium iodide crystals at 10 K. The origin of principal luminescence bands and the role of impurities in the formation of emission centers are discussed. The luminescence properties have been explained based on the electronic structure of CdI2 crystals.

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)Condensed Matter::OtherExcitation spectraDopingAnalytical chemistryPhysics::OpticsGeneral Physics and AstronomySynchrotron radiationLuminescence spectraElectronic structure01 natural sciences3. Good healthCondensed Matter::Materials Sciencechemistry.chemical_compoundCadmium iodidechemistryImpurityCondensed Matter::Superconductivity0103 physical sciencesCondensed Matter::Strongly Correlated Electrons010306 general physicsLuminescenceLow Temperature Physics
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Assembly of microparticles by optical trapping with a photonic crystal nanocavity

2012

International audience; In this work, we report the auto-assembly experiments of micrometer sized particles by optical trapping in the evanescent field of a photonic crystal nanocavity. The nanocavity is inserted inside an optofluidic cell designed to enable the real time control of the nanoresonator transmittance as well as the real time visualization of the particles motion in the vicinity of the nanocavity. It is demonstrated that the optical trap above the cavity enables the assembly of multiple particles in respect of different stable conformations.

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)Condensed Matter::Otherbusiness.industryNanophotonicsPhysics::Optics02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesMicrometreResonatorRESONATORSOpticsRadiation pressureOptical tweezers0103 physical sciencesTransmittanceOptoelectronicsSelf-assembly0210 nano-technologybusinessPhotonic crystal
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2019

We systematically study the pump-wavelength dependence of terahertz pulse generation in thin-film spintronic THz emitters composed of a ferromagnetic CoFeB layer between adjacent nonmagnetic W and Pt layers. We find that the efficiency of THz generation is essentially flat for excitation by 150 fs pulses with center wavelengths ranging from 900 to 1500 nm, demonstrating that the spin current does not depend strongly on the pump photon energy. We show that the inclusion of dielectric overlayers of TiO2 and SiO2, designed for a particular excitation wavelength, can enhance the terahertz emission by a factor of up to two in field.

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)SpintronicsField (physics)business.industryTerahertz radiationPhysics::Optics02 engineering and technologyDielectricPhoton energy021001 nanoscience & nanotechnology01 natural sciencesCondensed Matter::Materials ScienceWavelengthFerromagnetism0103 physical sciencesOptoelectronics0210 nano-technologybusinessExcitationApplied Physics Letters
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Fabrication and characterization of low cost Cu 2 O/ZnO:Al solar cells for sustainable photovoltaics with earth abundant materials

2016

Abstract The low cost electrodeposition method was used to grow Cu2O thin films and experimentally determine the optimal absorber layer thickness. Raman scattering studies indicate the presence of solely crystalline Cu2O and SEM images show that the thin films consist of grains with a pyramidal shape. The influence of the thickness of the light absorbing Cu2O layer on the basic characteristic of the heterojunction and their properties have been investigated using reflectivity, current–voltage (J–V), capacitance–voltage (C–V) and the external quantum efficiency (EQE) measurements. The depletion layer, the charge collection length of the minority carrier, and reflectivity are the main factors…

010302 applied physicsMaterials scienceRenewable Energy Sustainability and the Environmentbusiness.industryOpen-circuit voltageHeterojunction02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionOpticsDepletion regionlawPhotovoltaics0103 physical sciencesSolar cellOptoelectronicsQuantum efficiencyThin film0210 nano-technologybusinessShort circuitSolar Energy Materials and Solar Cells
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Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

2018

Abstract Silicon single crystal growth by the Czochralski (CZ) technique is studied numerically using non-stationary mathematical models which allow to predict the evolution of the CZ system in time, including Dash neck, cone and cylindrical growth stages. The focus is on the point defect dynamics, also considering the effect of the thermal stresses. During the cylindrical stage, the crystal pull rate is temporarily reduced as in experiments by Abe et al. The crystal radius and heater power change is explicitly considered in the calculations for crystal diameters of 50, 100 and 200 mm and the agreement with experiments is discussed.

010302 applied physicsMaterials scienceSiliconField (physics)Mathematical modelchemistry.chemical_element02 engineering and technologyRadiusMechanics021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesInorganic ChemistryCrystalchemistry0103 physical sciencesThermalMaterials ChemistryPoint (geometry)0210 nano-technologyFocus (optics)Journal of Crystal Growth
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3D modeling of growth ridge and edge facet formation in 〈100〉 floating zone silicon crystal growth process

2019

Abstract A 3D quasi-stationary model for crystal ridge formation in FZ crystal growth systems for silicon is presented. Heat transfer equations for the melt and crystal are solved, and an anisotropic crystal growth model together with a free surface shape solver is used to model the facet growth and ridge formation. The simulation results for 4″ and 5″ crystals are presented and compared to experimental ridge shape data.

010302 applied physicsMaterials scienceSiliconPhysics::Opticschemistry.chemical_elementCrystal growthGeometry02 engineering and technologyEdge (geometry)021001 nanoscience & nanotechnologyCondensed Matter PhysicsRidge (differential geometry)01 natural sciencesInorganic ChemistryMonocrystalline siliconCrystalchemistryCondensed Matter::SuperconductivityFree surface0103 physical sciencesMaterials ChemistryFacet0210 nano-technologyJournal of Crystal Growth
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Effect of process parameters and crystal orientation on 3D anisotropic stress during CZ and FZ growth of silicon

2017

Abstract Simulations of 3D anisotropic stress are carried out in and oriented Si crystals grown by FZ and CZ processes for different diameters, growth rates and process stages. Temperature dependent elastic constants and thermal expansion coefficients are used in the FE simulations. The von Mises stress at the triple point line is ~5–11% higher in crystals compared to crystals. The process parameters have a larger effect on the von Mises stress than the crystal orientation. Generally, the crystal has a higher azimuthal variation of stress along the triple point line (~8%) than the crystal (~2%). The presence of a crystal ridge increases the stress beside the ridge and decreases it on the ri…

010302 applied physicsMaterials scienceSiliconTriple pointPhysics::Opticschemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter PhysicsRidge (differential geometry)01 natural sciencesThermal expansionInorganic ChemistryStress (mechanics)CrystalCrystallographychemistryCondensed Matter::Superconductivity0103 physical sciencesMaterials Chemistryvon Mises yield criterionComposite material0210 nano-technologyLine (formation)Journal of Crystal Growth
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Mathematical modelling of the feed rod shape in floating zone silicon crystal growth

2017

Abstract A three-dimensional (3D) transient multi-physical model of the feed rod melting in the floating zone (FZ) silicon single-crystal growth process is presented. Coupled temperature, electromagnetic (EM), and melt film simulations are performed for a 4 inch FZ system, and the time evolution of the open melting front is studied. The 3D model uses phase boundaries and parameters from a converged solution of a quasi-stationary axisymmetric (2D) model of the FZ system as initial conditions for the time dependent simulations. A parameter study with different feed rod rotation, crystal pull rates and widths of the inductor main slit is carried out to analyse their influence on the evolution …

010302 applied physicsMaterials scienceSiliconbusiness.industryRotational symmetryTime evolutionPhase (waves)chemistry.chemical_element010103 numerical & computational mathematicsMechanicsCondensed Matter PhysicsRotation01 natural sciencesCondensed Matter::Soft Condensed MatterInorganic ChemistryMonocrystalline siliconCrystalOpticschemistry0103 physical sciencesMaterials ChemistryTransient (oscillation)0101 mathematicsbusinessJournal of Crystal Growth
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Choice of the detectors for light impurities plasma studies at W7-X using ‘CO Monitor’ system

2019

Abstarct The ‘CO Monitor’ is a new spectrometer system dedicated for the continuous measurements of line intensities of carbon, oxygen, boron and nitrogen at the fusion plasma experiment Wendelstein 7-X (W7-X). Its main purpose is to deliver constant information about indicated elements with high time resolution (better than 1 ms), but low spatial resolution since the line shapes are not going to be investigated. The system consists of four independent channels, each equipped with dispersive element dedicated for measurement of selected line of interest. In order to perform the highest efficiency of the ‘CO Monitor’ system, it is essential to choose the proper detector type for this task. T…

010302 applied physicsMaterials scienceSpectrometerbusiness.industryMechanical EngineeringDetectorPhase (waves)PlasmaElectronXUVDetectorsWendelstein 7-XStellarator01 natural sciencesLine (electrical engineering)010305 fluids & plasmasOpticsNuclear Energy and Engineering0103 physical sciencesGeneral Materials SciencebusinessSensitivity (electronics)Image resolutionCivil and Structural EngineeringFusion Engineering and Design
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