Search results for "Optoelectronics"

showing 10 items of 2306 documents

Sputtered SiOxNy thin films: improving optical efficiency of liquid crystal diffuser elements in multi-focal near-to-eye display architecture

2021

In this work we present reactive sputtered SiOxNy films with a variable refractive index as a convienent solution for contrast improvement of liquid crystal diffuser multi stacks in near-to-eye AR/VR displays. The focus concerns minimization of light reflections between internal structures, in particular ITO, by optimizing internal layers through tailored properties of thin film coatings, as well as subsequent laser patterning of thin film stack. Inorganic thin films have been deposited on glass by physical vapor deposition. Corresponding refractive index, thickness, uniformity and dielectric characteristics and other electro-optical properties have been measured and their impact on the res…

Silicon oxynitrideMaterials sciencebusiness.industryDielectricchemistry.chemical_compoundchemistryStack (abstract data type)Liquid crystalPhysical vapor depositionOptoelectronicsThin filmbusinessDiffuser (optics)Refractive indexAdvances in Optical Thin Films VII
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Polarization Insensitive Wavelength Conversion in a Low-Birefringence SiGe Waveguide

2016

We report the first demonstration of a single-pass dual-orthogonal-pump four-wave mixing-based wavelength conversion scheme in a silicon-based waveguide. The silicon germanium waveguide used was designed to exhibit strong TE/TM mode similarity across a broad wavelength range as well as a large nonlinear coefficient. A polarization-dependent loss of just 0.42 dB was measured, and the conversion of 40-Gb/s differential phase-shift keying signals was demonstrated with 1.5-dB power penalty at a bit error ratio of $10^{-9}$ .

Silicon photonicsMaterials scienceBirefringenceSiliconbusiness.industryPhysics::Opticschemistry.chemical_elementOptical polarization02 engineering and technologyPolarization (waves)Waveguide (optics)Atomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsSilicon-germaniumchemistry.chemical_compound020210 optoelectronics & photonicsZero-dispersion wavelengthOpticschemistry0202 electrical engineering electronic engineering information engineeringOptoelectronicsElectrical and Electronic EngineeringbusinessIEEE Photonics Technology Letters
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New Molecular-Based Materials for Enabling Electro-Optical Bistability in the Silicon Photonics Platform

2019

Electro-optical bistability is a functionality which can be crucial for a wide range of applications as it can enable non-volatile and ultra-low power switching performance. We investigate the integration of a molecular-based material presenting a Spin Crossover (SCO) effect in the silicon platform for enabling optical bistability. The SCO phenomenon involves a switching process between two molecular spin states. This spin transition comes along with a change in the optical refractive index that can be switched by different external stimuli such as a variation of temperature or light irradiation and which has a hysteretic behaviour. The SCO material can be synthetized as nanoparticles so th…

Silicon photonicsMaterials scienceBistabilitySiliconbusiness.industrySpin transitionchemistry.chemical_element02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnology01 natural sciencesOptical switch0104 chemical sciencesOptical bistabilitychemistrySpin crossoverOptoelectronicsPhotonics0210 nano-technologybusinessComputer Science::Databases2019 21st International Conference on Transparent Optical Networks (ICTON)
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Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime

2013

We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.

Silicon photonicsMaterials scienceSiliconPhysics::Instrumentation and Detectorsbusiness.industryHybrid silicon laserchemistry.chemical_elementSettore ING-INF/02 - Campi ElettromagneticiOptical powerSubstrate (electronics)Settore ING-INF/01 - ElettronicaElectronic Optical and Magnetic MaterialsResponsivityOpticsSilicon photomultiplierchemistryOptoelectronicsContinuous waveAvalanche photodiode (APD) photodetector responsivity silicon photomultiplier (SiPM) single-photon avalanche diode (SPAD)Electrical and Electronic EngineeringbusinessIEEE Transactions on Electron Devices
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Broadband photocurrent enhancement in a-Si:H solar cells with plasmonic back reflectors

2014

The authors acknowledge Francesco Ruffino for the AFM measurements. This work was funded by the EU FP7 Marie Curie Action FP7-PEOPLE-2010-ITN through the PROPHET project (Grant No. 264687), the bilateral CNR/AVCR project "Photoresponse of nanostructures for advanced photovoltaic applications", the MIUR project Energetic (Grant no. PON02_00355_3391233) and by the Portuguese Science Foundation (FCT-MEC) through the Strategic Project PEst-C/CTM/LA0025/2013-14 and the research project PTDC/CTM-ENE/2514/2012. Plasmonic light trapping in thin film silicon solar cells is a promising route to achieve high efficiency with reduced volumes of semiconductor material. In this paper, we study the enhance…

SiliconMaterials scienceConformal growthSiliconchemistry.chemical_elementPlasmon02 engineering and technologyFILMS01 natural sciences7. Clean energySilver A-Si:H solar cellSettore ING-INF/01 - ElettronicaLight scatteringOptics0103 physical sciencesPhotocurrentFabrication parameterPlasmonic solar cellThin filmSILICONPhotocurrent enhancementPlasmon010302 applied physicsPhotocurrentbusiness.industryLight scattering021001 nanoscience & nanotechnologySolar energyScattering effectAtomic and Molecular Physics and OpticschemistryDiffuse reflectionOptoelectronicsDiffuse reflectionThin-film silicon solar cells Silicon solar cells0210 nano-technologybusinessSilver nanoparticle (NPs)Optics Express
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Optical tweezing using tunable optical lattices along a few-mode silicon waveguide

2018

International audience; Fourteen years ago, optical lattices and holographic tweezers were considered as a revolution, allowing for trapping andmanipulating multiple particles at the same time using laser light. Since then, near-field optical forces have arousedtremendous interest as they enable efficient trapping of a wide range of objects, from living cells to atoms, in integrateddevices. Yet, handling at will multiple objects using a guided light beam remains a challenging task for current on-chipoptical trapping techniques. We demonstrate here on-chip optical trapping of dielectric microbeads and bacteria usingone-dimensional optical lattices created by near-field mode beating along a f…

SiliconMaterials scienceOptical TweezersSiliconBiomedical EngineeringNanophotonicsHolographychemistry.chemical_elementPhysics::OpticsBioengineering02 engineering and technologyTrappingModels Biological01 natural sciencesBiochemistryWaveguide (optics)law.invention010309 opticslawLab-On-A-Chip Devices0103 physical sciencesTweezersLight beamParticle Sizebusiness.industryGeneral Chemistry021001 nanoscience & nanotechnologyMicrospheres[SPI.ELEC]Engineering Sciences [physics]/ElectromagnetismchemistryOptical tweezers[SPI.OPTI]Engineering Sciences [physics]/Optics / PhotonicNanoparticlesOptoelectronics0210 nano-technologybusiness
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Low-cost high-haze films based on ZnO nanorods for light scattering in thin c-Si solar cells

2015

Light scattering from ZnO nanorods (NR) is investigated, modeled, and applied to a solar cell. ZnO NR (120-1300 nm long, 280-60 nm large), grown by low-cost chemical bath deposition at 90 degrees C, exhibit diffused-to-total transmitted light as high as 70% and 30% in the 400 and 1000 nm wavelength range, respectively. Data and scattering simulation show that ZnO NR length plays a crucial role in light diffusion effect. A transparent ZnO NR film grown on glass and placed on top of a 1 mu m thick c-Si solar cell is shown to enhance the light-current conversion efficiency for wavelengths longer than 600 nm. (C) 2015 AIP Publishing LLC.

SiliconMaterials sciencePhysics and Astronomy (miscellaneous)SiliconZnO nanorod Silicon solar cellschemistry.chemical_elementNanorodSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della MateriaLight scatteringlaw.inventionlawSolar cellZinc oxide C-Si solar cellChemical-bath depositionbusiness.industryScatteringSolar cellEnergy conversion efficiencyWide-bandgap semiconductorLight scatteringCurrent conversion efficiencychemistryLight diffusionScattering simulationOptoelectronicsNanorodTransmitted lightbusinessWavelength rangeChemical bath depositionApplied Physics Letters
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Solar blind detectors based on AlGaN grown on sapphire

2005

Solar blind detectors have been fabricated based on AlGaN heterostructures grown on sapphire by molecular beam epitaxy or chemical vapour deposition. MSM and Schottky detectors were investigated. High performance devices have been obtained thanks to an optimization of the material crystalline quality (including the suppression of cracks) and of the process. We show that the spectral limitations of MSM detectors are dictated by intrinsic phenomena that are analysed in details while the responsivity and detectivity also depends on the technological process with a special emphasis on the geometry of finger and contact pads. One and two dimensional arrays have been fabricated and preliminary re…

SiliconMaterials sciencebusiness.industryFlame DetectionPhotodetectorsSchottky diodePhotodetectorHeterojunctionultraviolet photodetectorsChemical vapor depositionGallium nitrideSettore ING-INF/01 - ElettronicaPhotodiodelaw.inventionResponsivitylawSapphireDetectivityOptoelectronicsSolar-blind detector UV detector AlGaNbusinessPhotodiodesMolecular beam epitaxyFilms
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Electrical Resistivity Anisotropy of Silicon-Doped n-Indium Selenide

1993

Siliconbusiness.industryChemistrySemiconductor materialsDopingInorganic chemistrychemistry.chemical_elementCondensed Matter PhysicsElectronic Optical and Magnetic Materialschemistry.chemical_compoundElectrical resistivity and conductivitySelenideOptoelectronicsbusinessAnisotropyIndiumPhysica Status Solidi (a)
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Active Plasmonics in True Data Traffic Applications: Thermo-Optic On/Off Gating Using a Silicon-Plasmonic Asymmetric MachZehnder Interferometer

2012

We present the first system-level demonstration of an active plasmonic device in 10-Gb/s data traffic conditions. An asymmetric silicon-plasmonic Mach-Zehnder interferometer with dielectric-loaded plasmonic waveguides serving as the electrically controlled arms, operates as thermo-optic ON/OFF gating element with 2.8-mu s response time and 10.8-mW power consumption. We present the first system-level demonstration of an active plasmonic device in 10-Gb/s data traffic conditions. An asymmetric silicon-plasmonic Mach-Zehnder interferometer with dielectric-loaded plasmonic waveguides serving as the electrically controlled arms, operates as thermo-optic ON/OFF gating element with 2.8-mu s respon…

Siliconchemistry.chemical_elementPhysics::Optics02 engineering and technologyGatingMach–Zehnder interferometerON-INSULATOR01 natural sciencesOptical switch010309 optics020210 optoelectronics & photonicsOptics0103 physical sciences0202 electrical engineering electronic engineering information engineeringSWITCHElectrical and Electronic EngineeringPlasmonPhysicsbusiness.industryResponse timeAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsInterferometrychemistryOptoelectronicsPhotonicsbusiness
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