Search results for "Optoelectronics"
showing 10 items of 2306 documents
Magnetic Properties of Quinoidal Oligothiophenes: More Than Good Candidates for Ambipolar Organic Semiconductors?
2006
A series of quinoidal oligothiophenes have been investigated by means of solid-state Fourier-transform (FT)-Raman and electron spin resonance (ESR) spectroscopies complemented with density functional theory calculations. FT-Raman spectra recorded as a function of temperature show that, upon laser irradiation, the molecules undergo a reversible structural evolution from a quinoid-type pattern at low temperature to an aromatic-type pattern at high temperature. Moreover, ESR spectra show that a portion of these compounds exists in a biradical state at room temperature. These seemingly disconnected findings and others, such as conformational isomerism, are consistently explained by the consider…
Parameters of microdischarges occuring at surfaces of repolarized ferroelectrical materials
1993
Parameters of the microdischarges occuring at the surfaces of the repolarized ferroelectric materials have been investigated. It has been found that in the case of BaTiO3ceramic the number of microdischarges increases linearly with increasing repolarizing voltage Upp, the photoelectric parameters of individual discharges being unchanged. The photoelectric and current parameters for system with TGS are very similar but the dependence of the amplitude of the current pulses on the repolarizing voltage differs distinctly from that for BaTiO3.
Energy resolution and throughput of a new real time digital pulse processing system for x-ray and gamma ray semiconductor detectors
2013
New generation spectroscopy systems have advanced towards digital pulse processing (DPP) approaches. DPP systems, based on direct digitizing and processing of detector signals, have recently been favoured over analog pulse processing electronics, ensuring higher flexibility, stability, lower dead time, higher throughput and better spectroscopic performance. In this work, we present the performance of a new real time DPP system for X-ray and gamma ray semiconductor detectors. The system is based on a commercial digitizer equipped with a custom DPP firmware, developed by our group, for on-line pulse shape and height analysis. X-ray and gamma ray spectra measurements with cadmium telluride (Cd…
Non-destructive technique to detect local buried defects in metal sample by scanning microwave microscopy
2012
International audience; Based on the skin effect, our recent developments using scanning microwave microscopy lead to propose a non-destructive method to detect located buried defect in metal samples like stainless steel. A 3D tomography is possible by taking advantage of microwave measurement, using a vector network analyzer in bandwidth frequencies, and the nanometer resolution positioning capabilities with atomic force microscopy. At each used frequency, an incident electromagnetic wave is sent to the sample and the reflected wave gives information on a specific depth layer in the material. With diagnostic tools of nanotechnologies (SEM. AFM, etc.), different stainless steel samples (fro…
Measurements of thickness dispersion in biolayers by scanning force microscopy and comparison with spectroscopic ellipsometry analysis.
2007
Measuring the thickness of biological films remains a difficult task when using differential measurements by atomic force microscopy (AFM). The use of microstructured substrates combined with a selective adsorption constitutes an alternative to tribological measurements. The statistical thickness analysis of biological layers, especially via the dispersion measurements, can provide a way to quantify the molecular orientation. AFM thicknesses were then compared with those obtained optically by spectroscopic ellipsometry (SE) and surface plasmon resonance enhanced ellipsometry (SPREE). The biolayers could then be modeled using a vertical gradient of optical index, which reflects height disper…
Benzene monitoring by micro-machined sensors with SnO2 layer obtained by using micro-droplet deposition technique
2011
International audience; SnO2 thin layers were deposited by the way of the micro-droplet technique. The sensor substrate consisted of a thin membrane developed on oxidised silicon wafer. The sensing layers were deposited by means of the micro-droplet technique into thin layers of about 100 nm. Such devices were tested for benzene detection. The obtained results showed a very high sensitivity for this chemical compound since 500 ppb were detected. The results presented in this paper were not focused on the reactional mechanism of benzene detection but rather on the development of a cheap and sensitive sensor using sol-gel and micro-droplet processes. Since these layers were elaborated using s…
Current rectification in a single molecule diode: the role of electrode coupling.
2015
We demonstrate large rectification ratios (> 100) in single-molecule junctions based on a metal-oxide cluster (polyoxometalate), using a scanning tunneling microscope (STM) both at ambient conditions and at low temperature. These rectification ratios are the largest ever observed in a single-molecule junction, and in addition these junctions sustain current densities larger than 10^5 A/cm^2. By following the variation of the I-V characteristics with tip-molecule separation we demonstrate unambiguously that rectification is due to asymmetric coupling to the electrodes of a molecule with an asymmetric level structure. This mechanism can be implemented in other type of molecular junctions u…
Thin film growth and band lineup of In2O3 on the layered semiconductor InSe
1999
Thin films of the transparent conducting oxide In2O3 have been prepared in ultrahigh vacuum by reactive evaporation of indium. X-ray diffraction, optical, and electrical measurements were used to characterize properties of films deposited on transparent insulating mica substrates under variation of the oxygen pressure. Photoelectron spectroscopy was used to investigate in situ the interface formation between In2O3 and the layered semiconductor InSe. For thick In2O3 films a work function of φ = 4.3 eV and a surface Fermi level position of EF−EV = 3.0 eV is determined, giving an ionization potential IP = 7.3 eV and an electron affinity χ = 3.7 eV. The interface exhibits a type I band alignmen…
Zinc oxide nanocrystals as electron injecting building blocks for plastic light sources
2012
Hybrid inorganic–organic light emitting devices (HyLEDs) employing ZnO nanocrystals as one of their metal oxide contacts lead to very bright devices on plastic substrates with performances superior to those obtained from the rigid counterparts employing planar films of bulk ZnO. The superior performance is related to the increase in the bandgap of the ZnO nanocrystals caused by quantum confinement effects. We demonstrate that this effect diminishes with increasing annealing temperature of the ZnO nanocrystal layer due to a gradual decrease of the bandgap towards the bulk ZnO value. Therefore, best performances were obtained with room temperature processing of the ZnO nanocrystals.
Au nanowire junction breakup through surface atom diffusion.
2018
Metallic nanowires are known to break into shorter fragments due to the Rayleigh instability mechanism. This process is strongly accelerated at elevated temperatures and can completely hinder the functioning of nanowire-based devices like e.g. transparent conductive and flexible coatings. At the same time, arranged gold nanodots have important applications in electrochemical sensors. In this paper we perform a series of annealing experiments of gold and silver nanowires and nanowire junctions at fixed temperatures 473, 673, 873 and 973 K (200 degrees C, 400 degrees C, 600 degrees C and 700 degrees C) during a time period of 10 min. We show that nanowires are especially prone to fragmentatio…