Search results for "Optoelectronics"
showing 10 items of 2306 documents
Photoconductive properties of Bi2S3nanowires
2015
The photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1–4 μW·cm−2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane…
Self-assembled hierarchical nanostructured perovskites enable highly efficient LEDs via an energy cascade
2018
Metal halide perovskites have established themselves as extraordinary optoelectronic materials, exhibiting promise for applications in large area illumination and displays. However, low luminescence, low efficiencies of the light-emitting diodes (LEDs), and complex preparation methods currently limit further progress towards applications. Here, we report on a new and unique mesoscopic film architecture featuring the self-assembly of 3D formamidinium lead bromide (FAPbBr3) nanocrystals of graded size, coupled with microplatelets of octylammonium lead bromide perovskites that enables an energy cascade, yielding very high-performance light-emitting diodes with emission in the green spectral re…
Si nanocrystals embedded in $SiO_2$: Optical studies in the vacuum ultraviolet range
2011
Photoluminescence excitation and transmission spectra of Si nanocrystals of different diameters embeddedin a SiO2 matrix have been investigated in the broad visible-vacuum ultraviolet spectral range usingsynchrotron radiation. The dependence of the photoluminescence excitation spectra on the nanocrystals sizewas experimentally established. It is shown that the photoluminescence excitation and absorption spectra aresignificantly blueshifted with decreasing Si nanocrystal size. A detailed comparison of photoluminescenceexcitation and absorption spectra with data from theoretical modeling has been done. It is demonstrated thatthe experimentally determined blueshift of the photoluminescence exc…
Mechanisms of Strong Photoluminescence from Si Nanocrystals
2011
Photoluminescence mechanisms (models) are reviewed and experimental data are analyzed based on our model, related to direct radiative transitions from the second conduction sub-band to the first one.
Optical properties of ZnMgO films grown by spray pyrolysis and their application to UV photodetection
2015
This work presents a comprehensive optical characterization of Zn1−xMgxO thin films grown by spray pyrolysis (SP). Absorption measurements show the high potential of this technique to tune the bandgap from 3.30 to 4.11 eV by changing the Mg acetate content in the precursor solution, leading to a change of the Mg-content ranging from 0 up to 35%, as measured by transmission electron microscopy-energy dispersive x-ray spectroscopy. The optical emission of the films obtained by cathodoluminescence and photoluminescence spectroscopy shows a blue shift of the peak position from 3.26 to 3.89 eV with increasing Mg incorporation, with a clear excitonic contribution even at high Mg contents. The lin…
Enhanced optical response of InSe nanosheet devices decorated with CsPbX3 (X = I, Br) perovskite nanocrystals
2021
Abstract The combination of several two-dimensional materials opens the door for the creation of cooperative nanodevices with functionalities that complement to each other and even compensate the weaknesses of the individual components. Two-dimensional indium selenide (InSe) shows one of the largest tunability bandgap found in two-dimensional materials with application in optoelectronics. However, the intrinsic out-of-plane luminescent dipolar nature limits its implementation in devices operating in vertical configuration. All-inorganic CsPbX3 (X = Br, I) cubic nanoparticles offer high absorption and emission quantum yields and great integrability with two-dimensional materials. Combining t…
Single step deposition of an interacting layer of a perovskite matrix with embedded quantum dots
2016
Hybrid lead halide perovskite (PS) derivatives have emerged as very promising materials for the development of optoelectronic devices in the last few years. At the same time, inorganic nanocrystals with quantum confinement (QDs) possess unique properties that make them suitable materials for the development of photovoltaics, imaging and lighting applications, among others. In this work, we report on a new methodology for the deposition of high quality, large grain size and pinhole free PS films (CH3NH3PbI3) with embedded PbS and PbS/CdS core/shell Quantum Dots (QDs). The strong interaction between both semiconductors is revealed by the formation of an exciplex state, which is monitored by p…
Tuning Optical Properties of Al 2 O 3 /ZnO Nanolaminates Synthesized by Atomic Layer Deposition
2014
Nanolaminates are of great interest for their unique properties such as high dielectric constants and advanced mechanical, electrical, and optical properties. Here we report on the tuning of optical and structural properties of Al2O3/ZnO nanolaminates designed by atomic layer deposition (ALD). Structural properties of nanolaminates were studied by SEM, GIXRD, and AFM. Optical characterization was performed by transmittance and photoluminescence (PL) spectroscopy. Complex study of monolayer properties was performed by ellipsometry. Optical constants for Al2O3 and ZnO monolayer were calculated. The band gap of ZnO single layers and the excitonic PL peak position were shifted to the UV region …
Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wires
2003
3 páginas, 2 figuras.-- PACS: 73.21.Hb; 78.55.Cr; 78.67.Lt.-- Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002.
Defect spectroscopy of single ZnO microwires
2014
The point defects of single ZnO microwires grown by carbothermal reduction were studied by microphotoluminescence, photoresistance excitation spectra, and resistance as a function of the temperature. We found the deep level defect density profile along the microwire showing that the concentration of defects decreases from the base to the tip of the microwires and this effect correlates with a band gap narrowing. The results show a characteristic deep defect levels inside the gap at 0.88 eV from the top of the VB. The resistance as a function of the temperature shows defect levels next to the bottom of the CB at 110 meV and a mean defect concentration of 4 1018 cm3 . This combination of tech…