Search results for "PHONON"
showing 10 items of 466 documents
Tin-related double acceptors in gallium selenide single crystals
1998
Gallium selenide single crystals doped with different amounts of tin are studied through resistivity and Hall effect measurements in the temperature range from 30 to 700 K. At low doping concentration tin is shown to behave as a double acceptor impurity in gallium selenide with ionization energies of 155 and 310 meV. At higher doping concentration tin also introduces deep donor levels, but the material remains p-type in the whole studied range of tin doping concentrations. The deep character of donors in gallium selenide is discussed by comparison of its conduction band structure to that of indium selenide under pressure. The double acceptor center is proposed to be a tin atom in interlayer…
Electron scattering mechanisms inn-type indium selenide
1984
Electron scattering mechanisms in $n$-type indium selenide are investigated by means of the temperature dependence (4-500 K) of Hall mobility and the magnetic field dependence of Hall and magnetoresistance coefficients. The Schmid model for homopolar optical-phonon scattering can explain the temperature dependence of electron mobility above 40 K. The electron-phonon coupling constant is determined, ${g}^{2}=0.054$. The optical phonon involved in the process is identified as the ${A}_{1}^{\ensuremath{'}}$ phonon with energy 14.3 meV. The magnetic field dependence of Hall and magnetoresistance coefficients is discussed in terms of the Jones-Zener expansion.
Transport properties of nitrogen doped p‐gallium selenide single crystals
1996
Nitrogen doped gallium selenide single crystals are studied through Hall effect and photoluminescence measurements in the temperature ranges from 150 to 700 K and from 30 to 45 K, respectively. The doping effect of nitrogen is established and room temperature resistivities as low as 20 Ω cm are measured. The temperature dependence of the hole concentration can be explained through a single acceptor‐single donor model, the acceptor ionization energy being 210 meV, with a very low compensation rate. The high quality of nitrogen doped GaSe single crystals is confirmed by photoluminescence spectra exhibiting only exciton related peaks. Two phonon scattering mechanisms must be considered in orde…
The VN2 negatively charged defect in diamond. A quantum mechanical investigation of the EPR response
2020
Abstract The VN 2 − defect in diamond consists of a vacancy surrounded by two substitutional nitrogen atoms, which lower the local symmetry from Td to C2v. Calculations of the doublet ground state geometry, electronic structure, EPR parameters, and IR spectra of this defect are reported along with a preliminary investigation of the observed optical transition. For the most part our results were obtained using a uniform charge compensated supercell approach together with the B3LYP functional and all-electron Gaussian basis sets designed for the properties studied. In particular, the computed hyperfine and quadrupolar EPR parameters for the carbon and nitrogen atoms adjacent to the vacancy ag…
Multiphonon couplings in the sub-barrier fusion of 36S+140Ce
2006
Fusion cross sections have been measured for the system 36S + 140Ce in the energy range encompassing the Coulomb barrier. A representation of the fusion barrier distribution has been obtained from the second energy derivative of the excitation function. The data are well described by coupled‐channels calculations including two‐phonon states of quadrupole and octupole character in the target (140Ce) and one octupole phonon in the projectile. The importance of 140Ce low‐lying inelastic excitations has been pointed out.
Splitting of surface-related phonons in Raman spectra of self-assembled GaN nanowires
2012
cited By 2; International audience; Micro Raman spectroscopy studies have been performed on GaN nanowires grown by Plasma-Assisted Molecular Beam Epitaxy on Silicon (111) substrate. From the analysis of experimental data, the emergence of a two peaks band located near 700 cm-1 has been attributed to the Raman scattering by surface-related phonons. We have analyzed the surface character of these two modes by changing the dielectric constant of the exterior medium and some experimental parameters. Furthermore, a theoretical model describing the nanowires ensemble by means of an effective dielectric function has been used to interpret the Raman scattering results. Those numerical simulations a…
Emission of real phonons due to electron's self-dressing in a covalent crystal
2011
A slow monoelectronic excitation in a covalent crystal at the temperature T=0 is analyzed. The interaction with zero-point longitudinal acoustic phonons leads to the formation of a dressed electronic state at an energy level lower than that of the initial bare state. This aspect of the dressing process is described here by hypothesizing that the excess of energy is released with the emission of real phonons. Specifically, this paper considers the transition probability from the bare monoelectronic state to a dressed state of the electron accompanied by real phonons and a deformation field. The spectrum of the real phonons emitted during the electronic self-dressing is calculated by applying…
Phonon-driven spin-Floquet magneto-valleytronics in MoS2
2018
AbstractTwo-dimensional materials equipped with strong spin–orbit coupling can display novel electronic, spintronic, and topological properties originating from the breaking of time or inversion symmetry. A lot of interest has focused on the valley degrees of freedom that can be used to encode binary information. By performing ab initio time-dependent density functional simulation on MoS2, here we show that the spin is not only locked to the valley momenta but strongly coupled to the optical E″ phonon that lifts the lattice mirror symmetry. Once the phonon is pumped so as to break time-reversal symmetry, the resulting Floquet spectra of the phonon-dressed spins carry a net out-of-plane magn…
Phonon Driven Floquet Matter.
2018
The effect of electron–phonon coupling in materials can be interpreted as a dressing of the electronic structure by the lattice vibration, leading to vibrational replicas and hybridization of electronic states. In solids, a resonantly excited coherent phonon leads to a periodic oscillation of the atomic lattice in a crystal structure bringing the material into a nonequilibrium electronic configuration. Periodically oscillating quantum systems can be understood in terms of Floquet theory, which has a long tradition in the study of semiclassical light-matter interaction. Here, we show that the concepts of Floquet analysis can be applied to coherent lattice vibrations. This coupling leads to p…
Ab initiocomputational study on the lattice thermal conductivity of Zintl clathrates[Si19P4]Cl4andNa4[Al4Si19]
2016
The lattice thermal conductivity of silicon clathrate framework ${\mathrm{Si}}_{23}$ and two Zintl clathrates, $[{\mathrm{Si}}_{19}{\mathrm{P}}_{4}]{\mathrm{Cl}}_{4}$ and ${\mathrm{Na}}_{4}[{\mathrm{Al}}_{4}{\mathrm{Si}}_{19}]$, is investigated by using an iterative solution of the linearized Boltzmann transport equation in conjunction with ab initio lattice dynamical techniques. At 300 K, the lattice thermal conductivities for ${\mathrm{Si}}_{23}, [{\mathrm{Si}}_{19}{\mathrm{P}}_{4}]{\mathrm{Cl}}_{4}$, and ${\mathrm{Na}}_{4}[{\mathrm{Al}}_{4}{\mathrm{Si}}_{19}]$ were found to be 43 W/(m K), 25 W/(m K), and 2 W/(m K), respectively. In the case of ${\mathrm{Na}}_{4}[{\mathrm{Al}}_{4}{\mathrm…