Search results for "PUO"
showing 10 items of 1105 documents
Michael Monroe – miesrepresentaation armahtaja
2013
Tutkimukseni käsittelee suomalaista taiteilijaa, artistia, elävää rock-legenda Michael Monroeta ja hänen visuaalisuuttaan uudenlaisena miesrepresentaationa. Michael Monroe on otollinen tutkimuskohde, sillä hänen ainutlaatuinen ja rohkea heteronormatiivisia rajoja rikkova tyylinsä on tuonut esille miehuuden feminiinisen puolen.
PISA 2000 results of reading literacy in Finland
2005
Liquid neutrality : Paradoxes of democracy in Finnish and Swedish NATO discussions?
2021
Suomalaisen turvallisuuspolitiikan tila : suomalaisen 2000-luvun alun turvallisuuspoliittisen debatin käsiteanalyyttinen tarkastelu
2011
Plasmon-Induced Direct Hot-Carrier Transfer at Metal-Acceptor Interfaces.
2019
Plasmon-induced hot-carrier transfer from a metal nanostructure to an acceptor is known to occur via two key mechanisms: (i) indirect transfer, where the hot carriers are produced in the metal nanostructure and subsequently transferred to the acceptor, and (ii) direct transfer, where the plasmons decay by directly exciting carriers from the metal to the acceptor. Unfortunately, an atomic-level understanding of the direct-transfer process, especially with regard to its quantification, remains elusive even though it is estimated to be more efficient compared to the indirect-transfer process. This is due to experimental challenges in separating direct from indirect transfer as both processes o…
Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs
2020
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, reflecting the striped structure of the power MOSFET investigated. Two different mechanisms were observed for degradation. At low drain bias (gate and source grounded), only the gate-oxide (at the JFET or neck region) is contributing in the ion-induced leakage current. For exposures at drain–source bias voltages higher than a specific threshold, additional higher drain leakage current is observed in t…
Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
2021
Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between drain and gate, similar to what was previously observed with heavy-ions, while the second exhibiting a complete gate rupture. The observed fail…
First observation of high-K isomeric states in $$^{249}$$Md and $$^{251}$$Md
2021
Decay spectroscopy of the odd-proton nuclei $^{249}$Md and $^{251}$Md has been performed. High-K isomeric states were identified for the first time in these two nuclei through the measurement of their electromagnetic decay. An isomeric state with a half-life of 2.8(5) ms and an excitation energy $\ge 910$ keV was found in $^{249}$Md. In $^{251}$Md, an isomeric state with a half-life of 1.4(3) s and an excitation energy $\ge 844$ keV was found. Similarly to the neighbouring $^{255}$Lr, these two isomeric states are interpreted as 3 quasi-particle high-K states and compared to new theoretical calculations. Excited nuclear configurations were calculated within two scenarios: via blocking nucle…
Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
2022
The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. The results were comparable, although the data may indicate a marginally lower thresholds for the isotopic enriched devices at lower linear energy transfer (LET). Slightly higher reverse bias threshold values for leakage current degradation were also observed compared to previously published work.