Search results for "Probe"
showing 10 items of 534 documents
Silicon Surface Passivation by ALD-Ga2O3: Thermal vs. Plasma-Enhanced Atomic Layer Deposition
2020
Silicon surface passivation by gallium oxide (Ga2O3) thin films deposited by thermal- and plasma-enhanced atomic layer deposition (ALD) over a broad temperature range from 75 °C to 350 °C is investigated. In addition, the role of oxidant (O3 or O-plasma) pulse lengths insufficient for saturated ALD-growth is studied. The material properties are analyzed including the quantification of the incorporated hydrogen. We find that oxidant dose pulses insufficient for saturation provide for both ALD methods generally better surface passivation. Furthermore, different Si surface pretreatments are compared (HF-last, chemically grown oxide, and thermal tunnel oxide). In contrast to previous reports, t…
Determination of Contact Potential Difference by the Kelvin Probe (Part II) 2. Measurement System by Involving the Composite Bucking Voltage
2016
Abstract The present research is devoted to creation of a new low-cost miniaturised measurement system for determination of potential difference in real time and with high measurement resolution. Furthermore, using the electrode of the reference probe, Kelvin method leads to both an indirect measurement of electronic work function or contact potential of the sample and measurement of a surface potential for insulator type samples. The bucking voltage in this system is composite and comprises a periodically variable component. The necessary steps for development of signal processing and tracking are described in detail.
Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy
2019
International audience; It is demonstrated that the N-polarity of GaN nanowires (NWs) spontaneously nucleated on Si (111) by molecular beam epitaxy can be reversed by intercalation of an Al-or Ga-oxynitride thin layer. The polarity change has been assessed by a combination of chemical etching, Kelvin probe force microscopy, cathodo-and photoluminescence spectroscopy and transmission electron microscopy experiments. Cathodoluminescence of the Ga-polar NW section exhibits a higher intensity in the band edge region, consistent with a reduced incorporation of chemical impurities. The polarity reversal method we propose opens the path to the integration of optimized metal-polar NW devices on any…
Object size effect on the contact potential difference measured by scanning Kelvin probe method
2010
International audience; Contact potential difference (CPD) was measured by macroscopic Kelvin probe instrument and scanning Kelvin probe microscope on Al, Ni and Pt on ITO substrates at ambient conditions. CPD values measured by scanning Kelvin probe microscope and macroscopic Kelvin probe are close within the error of about 10-30% for large studied objects, whereas scanning Kelvin probe microscope signal decreases, when the object size becomes smaller than 1.4 m. CPD and electric field signals measured using many-pass technique allowed us to estimate the influence of electrostatic field disturbance, especially, in the case of small objects.
Determination of Contact Potential Difference by the Kelvin Probe (Part I) I. Basic Principles of Measurements
2016
Abstract Determination of electric potential difference using the Kelvin probe, i.e. vibrating capacitor technique, is one of the most sensitive measuring procedures in surface physics. Periodic modulation of distance between electrodes leads to changes in capacitance, thereby causing current to flow through the external circuit. The procedure of contactless, non-destructive determination of contact potential difference between an electrically conductive vibrating reference electrode and an electrically conductive sample is based on precise control measurement of Kelvin current flowing through a capacitor. The present research is devoted to creation of a new low-cost miniaturised measuremen…
Influence of surface topography on depth profiles obtained by Rutherford backscattering spectrometry
2000
A method for determining correct depth profiles from samples with rough surfaces is presented. The method combines Rutherford backscattering spectrometry with atomic force microscopy. The topographical information obtained by atomic force microscopy is used to calculate the effect of the surface roughness on the backscattering spectrum. As an example, annealed Au/ZnSe heterostructures are studied. Gold grains were observed on the surfaces of the annealed samples. The annealing also caused diffusion of gold into the ZnSe. Backscattering spectra of the samples were measured with a 2 MeV 4He+ ion beam. A scanning nuclear microprobe was used to verify the results by measuring backscattering fro…
Single crystal-like thin films of blue bronze
2021
Abstract Pulsed laser deposition technique was employed to grow thin films of K 0.3 M o O 3 on A l 2 O 3 (1-102) and S r T i O 3 (510) substrates. Structural and imaging characterization revealed good quality films with well oriented grains of few microns in length. Both non-selective (transport) and order-selective (femtosecond pump-probe spectroscopy) probes revealed charge density wave properties that are very close to those of the single crystals. The films exhibit metal-semiconductor phase transition in resistivity, pump-probe data show phase transition at the same temperature as the single crystal and the threshold for the photo-induced phase transition is approximately the same as in…
Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe
2011
Using synchrotron radiation nanoprobe, this work reports on the elemental distribution in single Inx Ga1–xN nanowires (NWs) grown by molecular beam epitaxy directly on Si(111) substrates. Single NWs dispersed on Al covered sapphire were characterized by nano-X-ray fluorescence, Raman scattering and photoluminescence spectroscopy. Both Ga and In maps reveal an inhomogeneous axial distribution inside sin- gle NWs. The analysis of NWs from the same sample but with different dimensions suggests a decrease of In segregation with the reduction of NW diameter, while Ga distribution seems to remain unaltered. Photoluminescence and Raman scattering measurements carried out on ensembles of NWs exhibi…
A New LA ‐ ICP ‐ MS Method for Ti in Quartz: Implications and Application to High Pressure Rutile‐Quartz Veins from the Czech Erzgebirge
2016
Experimental determination of the pressure and temperature controls on Ti solubility in quartz provides a calibration of the Ti-in-quartz (TitaniQ) geothermometer applicable to geological conditions up to ~ 20 kbar. We present a new method for determining 48Ti mass fractions in quartz by LA-ICP-MS at the 1 μg g−1 level, relevant to quartz in HP-LT terranes. We suggest that natural quartz such as the low-CL rims of the Bishop Tuff quartz (determined by EPMA; 41 ± 2 μg g−1 Ti, 2s) is more suitable than NIST reference glasses as a reference material for low Ti mass fractions because matrix effects are limited, Ca isobaric interferences are avoided, and polyatomic interferences at mass 48 are i…
2,4,5-Triaryl imidazole probes for the selective chromo-fluorogenic detection of Cu(II). Prospective use of the Cu(II) complexes for the optical reco…
2019
The sensing behaviour toward metal cations and biothiols of two 2,4,5-triarylimidazole probes (3a and 3b) is tested in acetonitrile and in acetonitrile-water. In acetonitrile the two probes present charge-transfer absorption bands in the 320-350 nm interval. Among all cations tested only Cu(11) is able to induce bathochromic shifts of the absorption band in the two probes, which is reflected in marked colour changes. Colour modulations are ascribed to the formation of 1:1 Cu(II)-probe complexes in which the cation interacts with the imidazole acceptor heterocycle. Besides, the two probes present intense emission bands (at 404 and 437 nm for 3a and 3b respectively) in acetonitrile that are q…