Search results for "Resistive switching"
showing 8 items of 18 documents
Experimental investigations of local stochastic resistive switching in yttria stabilized zirconia film on a conductive substrate
2020
We report on the results of the experimental investigations of the local resistive switching (RS) in the contact of a conductive atomic force microscope (CAFM) probe to a nanometer-thick yttria stabilized zirconia (YSZ) film on a conductive substrate under a Gaussian noise voltage applied between the probe and the substrate. The virtual memristor was found to switch randomly between the low resistance state and the high resistance state as a random telegraph signal (RTS). The potential profile of the virtual memristor calculated from its response to the Gaussian white noise shows two local minima, which is peculiar of a bistable nonlinear system.
Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack
2019
Resistive switching (RS) is studied in a memristor based on a ZrO2(Y)/Ta2O5 stack under a white Gaussian noise voltage signal. We have found that the memristor switches between the low resistance state and the high resistance state in a random telegraphic signal (RTS) mode. The effective potential profile of the memristor shows from two to three local minima and depends on the input noise parameters and the memristor operation. These observations indicate the multiplicative character of the noise on the dynamical behavior of the memristor, that is the noise perceived by the memristor depends on the state of the system and its electrical properties are influenced by the noise signal. The det…
Stochastic model of memristor based on the length of conductive region
2021
Abstract We propose a stochastic model of a voltage controlled bipolar memristive system, which includes the properties of widely used dynamic SPICE models and takes into account the fluctuations inherent in memristors. The proposed model is described by rather simple equations of Brownian diffusion, does not require significant computational resources for numerical modeling, and allows obtaining the exact analytical solutions in some cases. The noise-induced transient bimodality phenomenon, arising under resistive switching, was revealed and investigated theoretically and experimentally in a memristive system, by finding a quite good qualitatively agreement between theory and experiment. B…
Forming-Free and Self-Rectifying Resistive Switching Effect in Anodic Titanium Dioxide-Based Memristors
2018
The paper presents the resistive switching of electroforming-free Ti/anodic- TiO 2 /Cu memristors. Anodic TiO 2 thin films were prepared by anodizing Ti layers. Microscale devices were fabricated by direct laser-assisted photolithography. Experimental results showed a bipolar and self-rectifying behavior of the devices, which could be useful for crossbar array configurations. Moreover, a gradual resistive switching of the devices in both directions was observed, indicating the presence of multi-level resistance states.
Nanosession: Spin Tunneling Systems
2013
Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor
2022
The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.
Resistive switching in memristors based on yttria-stabilized zirconia
2021
Effect of pulse amplitude on depression and potentiation of ZrO2(Y)-based memristive synaptic device
2022
The effect of the amplitude of depressing and potentiating pulses on the synaptic plasticity (potentiation and depression) of a memristive device based on the Ta/ZrO2(Y)/Pt stack has been experimentally studied. It is shown that the amplitude of depressing and potentiating pulses affects the synaptic plasticity, namely, the value of current passing through the memristive device. The presented results demonstrate the prospects of using the ZrO2(Y)-based memristive devices as stable and low-power elements of neuromorphic systems.