Search results for "Resistivity"

Enhancement of spin Hall conductivity in W-Ta alloy

2020

Generating pure spin currents via the spin Hall effect in heavy metals has been an active topic of research in the last decade. In order to reduce the energy required to efficiently switch neighbouring ferromagnetic layers for applications, one should not only increase the charge- to-spin conversion efficiency but also decrease the longitudinal resistivity of the heavy metal. In this work, we investigate the spin Hall conductivity in W_{1-x}Ta_{x} / CoFeB / MgO (x = 0 - 0.2) using spin torque ferromagnetic resonance measurements. Alloying W with Ta leads to a factor of two change in both the damping-like effective spin Hall angle (from - 0.15 to - 0.3) and longitudinal resistivity (60 - 120…

Pre-determining the location of electromigrated gaps by nonlinear optical imaging

2014

In this paper we describe a nonlinear imaging method employed to spatially map the occurrence of constrictions occurring on an electrically-stressed gold nanowire. The approach consists at measuring the influence of a tightly focused ultrafast pulsed laser on the electronic transport in the nanowire. We found that structural defects distributed along the nanowire are efficient nonlinear optical sources of radiation and that the differential conductance is significantly decreased when the laser is incident on such electrically-induced morphological changes. This imaging technique is applied to pre-determined the location of the electrical failure before it occurs.

Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices

2018

The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (∼0.1 V), that are those at which t…

Electrical conductivity properties of expanded graphite-polycarbonatediol polyurethane composites

2014

Conductive polymer composites of segmented polycarbonatediol polyurethane and expanded graphite (EG) have been synthesized with different amounts of EG conductive filler (from 0 to 50 wt%). SEM, X-ray diffraction measurements, Fourier transform infrared and Raman spectroscopies demonstrated a homogeneous dispersion of the EG filler in the matrix. The dielectric permittivity of the composites showed an insulator to conductor percolation transition with increase in EG content. Significant changes in the dielectric permittivity take place when the weight fraction of EG is in the range 20–30 wt%. Special attention has been paid to the dependence of the conductivity on frequency, temperature and…

High power impulse magnetron sputtering of Zn/Al target in an Ar and Ar/O2 atmosphere: The study of sputtering process and AZO films

2019

Financial support provided by Scientific Research Project for Students and Young Researchers Nr. SJZ/2017/4 realised at the Institute of Solid State Physics, University of Latvia is greatly acknowledged.

Multi-temperature synchrotron PXRD and physical properties study of half-Heusler TiCoSb.

2010

Phase pure samples of the half-Heusler material TiCoSb were synthesised and investigated. Multi-temperature synchrotron powder X-ray diffraction (PXRD) data measured between 90 and 1000 K in atmospheric air confirm the phase purity, but they also reveal a decomposition reaction starting at around 750 K. This affects the high temperature properties since TiCoSb is semiconducting, whereas CoSb is metallic. Between 90 K and 300 K the linear thermal expansion coefficient is estimated to be 10.5 × 10(-6) K(-1), while it is 8.49 10(-6) K(-1) between 550 K and 1000 K. A fit of a Debye model to the Atomic Displacement Parameters obtained from Rietveld refinement of the PXRD data gives a Debye tempe…

Structural and Electric Properties of Sodium Lithium Niobate Ceramic Solid Solution Li0.08Na0.92NbO3

2011

A lead-free solid solution Li0.08Na0.92NbO3 was prepared by a two-stage hot-pressing technology. The structure and morphology of Li0.08Na0.92NbO3 were characterised by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The studies of electric conductivity were performed depending on temperature and frequency of electric measuring field on heating and cooling processes. These measurements revealed that the a.c. conductivity changed with the frequency according to the formula: σ(ω)=σ dc +Aω n where n < 1. These results were discussed considering the conduction mechanism as a type of polaron hopping.

Magnetic molecular metals based on the organic donor molecule BET (BET = Bis(ethylenethio)tetrathiafulvalene): The series BET2[MCI4] (M3⊕= Ga, Fe)

1997

Experimental Investigation of the Optimal Ingot Resistivity for both the Cell Performances and the Temperature Coefficients for Different Cell Archit…

2018

Compensation engineering enables the achievement of lower ingot resistivities with relatively constant performances along the ingot height. In this paper the impact of the bulk resistivity on the cell performances and the temperature coefficients is investigated for compensated and non-compensated multicrystalline silicon. Based on experimental data we show that reducing the bulk resistivity below a certain value improves the temperature coefficients but deteriorates the cell performances for two distinct cell architectures (AI-BSF and PERCT). Moreover this performance loss is not balanced out by the improved temperature coefficient for operating conditions below 70°C.

Effect of the Content and Ordering of the sp2 Free Carbon Phase on the Charge Carrier Transport in Polymer-Derived Silicon Oxycarbides

2020

The present work elaborates on the correlation between the amount and ordering of the free carbon phase in silicon oxycarbides and their charge carrier transport behavior. Thus, silicon oxycarbides possessing free carbon contents from 0 to ca. 58 vol.% (SiOC/C) were synthesized and exposed to temperatures from 1100 to 1800 &deg