Search results for "Rutherford backscattering"
showing 8 items of 28 documents
Synthesis and characterization of cobalt silicide films on silicon
2006
Cobalt silicide has emerged as a leading contact material in silicon technology due to its low resistivity, high stability and small lattice mismatch. In this study, 0.2-0.4 mu m thick Co films were deposited on Si(100) wafers by RF magnetron sputtering at room temperature, and annealed at temperatures from 600 to 900 degrees C in vacuum. As-deposited and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). Although the Si substrates were sputter cleaned before the deposition, all the samples showed a thin oxide layer at the Si/Co interfaces. Annealing up to 700 d…
Characterization of 233U alpha recoil sources for 229()Th beam production
2019
Radioactive $^{233}$U alpha recoil sources are being considered for the production of a thorium ion source to study the low-energy isomer in $^{229}$Th with high-resolution collinear laser spectroscopy at the IGISOL facility of the University of Jyv\"askyl\"a. In this work two different $^{233}$U sources have been characterized via alpha and gamma spectroscopy of the decay radiation obtained directly from the sources and from alpha-recoils embedded in implantation foils. These measurements revealed rather low $^{229}$Th recoil efficiencies of only a few percent. Although the low efficiency of one of the two sources can be attributed to its inherent thickness, the low recoil efficiency of th…
Time-of-flight telescope for heavy-ion RBS
2007
Abstract This paper describes a time-of-flight (TOF) spectrometer for Heavy-Ion Rutherford Backscattering Spectrometry (HI-RBS) recently installed at IMEC for thin film analysis. The TOF telescope allows the use of ion beams heavier than He, with advantages in terms of depth and mass resolution and sensitivity compared to conventional RBS based on planar Si detectors. The start timing-signal is produced by the secondary electrons emitted from a thin C foil when traversed by a backscattered ion; the electrons are deflected in an electrostatic mirror towards a Micro-channel plate (MCP) assembly which provides a fast timing response. The stop signal is obtained directly from a second MCP assem…
Structural characterization of a-plane Zn1−xCdxO (0 < x <0.085) thin films grown by metal-organic vapor phase epitaxy.
2006
Zn1−xCdxO(11math0) films have been grown on (01math2) sapphire (r–plane) substrates by metal-organic vapor phase epitaxy. A 800-nm-thick ZnO buffer, deposited prior to the alloy growth, helps to prevent the formation of pure CdO. A maximum uniform Cd incorporation of 8.5 at. % has been determined by Rutherford backscattering spectrometry. Higher Cd contents lead to the coexistence of Zn1−xCdxO alloys of different compositions within the same film. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.93 eV for the highest Cd concentration (8.5 at. %). The lattice deformation, due to Cd incorporation, has been described using a n…
Characterization of alpha sources by Rutherford backscattering spectrometry
1996
Radioactive sources for alpha spectrometry are usually prepared by electrodeposition onto stainless steel backings (and sometimes heated). In earlier work, using the conventional method with passivated implanted planar silicon detectors for the measurements, several sources had been characterized in terms of various parameters by fitting the data of each spectrum to a certain mathematical function. In the present work, the Rutherford Backscattering Spectrometry (RBS) technique with a 1.6 MeV He+ beam was used to study the influence of those factors on the surface distribution and depth profiles of the thin radionuclide layers. Simulations of the measurements using the RUMP computer code wer…
Semipermeable membrane to retain platinum atoms in the electrodeposition process of alpha spectrometry sources
1998
Abstract In earlier work alpha sources electrodeposited on stainless steel backings were analyzed by X-ray fluorescence (XRF) and Rutherford backscattering spectrometry (RBS) finding that during the electrodeposition process large quantities of platinum from the anode were deposited on the cathode surface jointly with the actinides. In the present work, a method to retain platinum atoms using an electrodeposition cell with a semipermeable membrane located between anode and cathode is proposed and tested. The XRF and RBS of alpha sources electrodeposited using this method show that there is less platinum on the stainless steel backing, thereby improving the quality of sources to be measured …
Light absorption in silicon quantum dots embedded in silica
2009
The photon absorption in Si quantum dots (QDs) embedded in SiO2 has been systematically investigated by varying several parameters of the QD synthesis. Plasma-enhanced chemical vapor deposition (PECVD) or magnetron cosputtering (MS) have been used to deposit, upon quartz substrates, single layer, or multilayer structures of Si-rich- SiO2 (SRO) with different Si content (43-46 at. %). SRO samples have been annealed for 1 h in the 450-1250 °C range and characterized by optical absorption measurements, photoluminescence analysis, Rutherford backscattering spectrometry and x-ray Photoelectron Spectroscopy. After annealing up to 900 °C SRO films grown by MS show a higher absorption coefficient a…
Structure and composition of sputter-deposited nickel-tungsten oxide films
2011
Films of mixed nickel-tungsten oxide, denoted NixW1-x oxide, were prepared by reactive DC magnetron co-sputtering from metallic targets and were characterized by Rutherford backscattering spectrometry. X-ray photoelectron spectroscopy, X-ray diffractometry and Raman spectroscopy. A consistent picture of the structure and composition emerged, and at x<0.50 the films comprised a mixture of amorphous WO3 and nanosized NiWO4, at x = 0.50 the nanosized NiWO4 phase was dominating, and at x>0.50 the films contained nanosized NiO and NiWO4.