Search results for "SILICON"
showing 10 items of 1391 documents
Properties of atomic layer deposited nanolaminates of zirconium and cobalt oxides
2018
Producción Científica
<title>Quantum chemical simulation of silicon nanostructures</title>
1999
The point defects in silicon, their migration, geometry and electronic structure, as well as some models for nanowires, were studied. The ab initio Self Consistent Field Molecular Orbital method and the molecular cluster model were used. Hydrogen pseudoatoms were used to saturate dangling bonds of the cluster. The influence of the compression onto defect structure and properties was simulated by changing the bond length value. The silicon interstitial migration activation energy, calculated as the difference between the total energies of the cluster with interstitial in tetrahedral and hexagonal positions, is 4.21 eV, and it does not depend on local pressure. The influence of high pressure …
Perovskite thin films grown by direct liquid injection MOCVD
2007
Abstract The continuous scaling down of devices dimensions, in silicon technology, imposes to replace silicon dioxide. Among the potential candidates for new capacitors, some perovskite structure materials (such as titanate or zirconate) show interesting characteristics. The first way to develop perovskite films is to use a mixture of two β-diketonates by varying the solution's cationic ratio. However, our previous results on SrZrO3 showed that a wide parametric study had to be carried on. Another way is to design novel heterometallic precursors that contain both cations on the same molecule. The ligands could be chosen so that peculiar evaporation and decomposition temperatures could be ob…
Chemical characterization of gallium droplets grown by LP-MOCVD.
2006
International audience; This study is concerned with the chemical characterization of metallic gallium droplets, obtained on silicon (1 0 0) substrates with a single growth step, by the LP-MOCVD technique with TMGa like precursor. These structures are characterized by SIMS, XPS and TEM. The analyses results lead to a structure proposition for the droplets. The core is composed of metastable metallic gallium with a non-negligible carbon quantity probably coming from incomplete precursor decomposition. The outer part, composed of gallium oxide maintains the structure stability. Covering of the substrate by a thin gallium layer of gallium compounds is observed.
Colorimetric gas detection by the varying thickness of a thin film of ultrasmall PTSA-coated TiO2 nanoparticles on a Si substrate
2017
Financial support from the Estonian Research Council (IUT2-25, PUT170, PUT1096, PUT748, PUTJD680), the Estonian Centre of Excellence in Research Projects “Advanced materials and high-technology devices for sustainable energetics, sensorics and nanoelectronics” TK141 (2014-2020.4.01.15-0011), “Emerging orders in quantum and nanomaterials” TK134 and the Development Fund of the University of Tartu, are all gratefully acknowledged.
Effect of the Content and Ordering of the sp2 Free Carbon Phase on the Charge Carrier Transport in Polymer-Derived Silicon Oxycarbides
2020
The present work elaborates on the correlation between the amount and ordering of the free carbon phase in silicon oxycarbides and their charge carrier transport behavior. Thus, silicon oxycarbides possessing free carbon contents from 0 to ca. 58 vol.% (SiOC/C) were synthesized and exposed to temperatures from 1100 to 1800 °
Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration
2017
Room-temperature plasma-enhanced atomic layer deposition (PEALD) of ZnO was studied by depositing the films using diethylzinc and O2 plasma from inductively-coupled plasma (ICP) and capacitively-coupled plasma (CCP) plasma source configurations. The CCP-PEALD was operated using both remote and direct plasma. It was observed that the films deposited by means of remote ICP and CCP were all highly oxygen rich, independently on plasma operation parameters, but impurity (H, C) contents could be reduced by increasing plasma pulse time and applied power. With the direct CCP-PEALD the film composition was closer to stoichiometric, and film crystallinity was enhanced. The ZnO film growth was observe…
Effects of irradiation damage on the back-scattering of electrons: silicon-implanted silicon
2007
Radiation damage in an (initially crystalline) silicon wafer was generated by microbeam implantation with 600 keV Si+ ions (fluence 5 x 1014 ions/cm²). To produce micro-areas with different degrees of damage, 14 implantations at different temperatures (between 23 and 225 °C) were done. The structural state of irradiated areas was characterized using Raman spectroscopy and electron back-scatter diffraction. All irradiated areas showed strong structural damage in surficial regions (estimated depth <1 μm), and at implant substrate temperatures of below 130 °C, the treatment has caused complete amorphization. Back-scattered electron (BSE) images exhibited that observed BSE intensities correlate…
Interface of Silicon Nitride Nanolayers with Oxygen Deficiency
2018
Multilayer Si 3 N 4 consisting of Si 3 N 4 nanolayers with the total thickness 60 nm was deposited layer-by-layer in a low-pressure chemical vapor deposition process. Compared with the single-layer Si 3 N 4 , the multilayer Si 3 N 4 had one-third less oxygen concentration at the interfaces. This decreased density of electrically active centers of oxygen traps and improved quality of nanocapacitors with multilayer Si 3 N 4 dielectric.
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
2019
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950 degrees C form Ohmic contacts on moderately n-type doped 3C-SiC (N-D similar to 1 x 10(17) cm(-3)), with a specific contact resistance of 3.7 x 10(-3) Omega cm(2). The main phase formed upon annealing in this contact was nickel silicide (Ni2Si), with randomly dispersed carbon in the reacted layer. In the case of a p-type 3C-SiC with a high doping level (N-A similar …