Search results for "SUPERCONDUCTIVITY"
showing 10 items of 983 documents
Analysis of magnetization relaxation in MgB2 bulk samples obtained by electric-field assisted sintering
2008
Abstract The relaxation of the irreversible magnetization of MgB2 bulk samples obtained by electric-field assisted sintering was investigated using the SQUID magnetometry for a magnetic field H up to 50 kOe applied in zero-field-cooling conditions. We observed a crossover plastic creep at high temperatures T-elastic creep at low T, described by H ∝ T−2 in the low T range, which appears to be caused by the macroscopic currents induced in the sample during magnetization measurements. By decreasing T below this line the determined creep exponent rapidly overcomes the widely accepted theoretical values for elastic (collective) pinning. This behaviour can easily be explained through the occurren…
Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction
2014
We theoretically investigate the Tunneling Anisotropic Magneto-Seebeck effect in a realistically-modeled CoPt|MgO|Pt tunnel junction using coherent transport calculations. For comparison we study the tunneling magneto-Seebeck effect in CoPt|MgO|CoPt as well. We find that the magneto-Seebeck ratio of CoPt|MgO|Pt exceeds that of CoPt|MgO|CoPt for small barrier thicknesses, reaching 175% at room temperature. This result provides a sharp contrast to the magnetoresistance, which behaves oppositely for all barrier thicknesses and differs by one order of magnitude between devices. Here the magnetoresistance results from differences in transmission brought upon by changing the tunnel junction's mag…
Inhibition of the detrimental double vortex-kink formation in thick YBa2Cu3O7films with BaZrO3nanorods
2013
We investigated the temperature (T) variation of the normalized magnetization relaxation rate S and of the corresponding normalized vortex-creep activation energy U* = T/S for YBa2Cu3O7 films containing BaZrO3 nanorods, with the external magnetic field H oriented perpendicular to the film surface. It was found that by increasing the film thickness and using nanodot decorated substrates the high-T S(T) maximum appearing at low H is substituted by a minimum in S(T). As revealed by the analysis of the current density dependence of U*, this behaviour is due to the inhibition of vortex excitations involving double vortex-kinks and superkinks formation in the investigated thick films, owing to th…
Ferroelectricity and structure of BaTiO grown on YBa Cu O thin films
2000
We have investigated the crystal structure and the ferroelectric properties of BaTiO3 thin films with YBa2Cu3O \(_{7 - \delta }\) as the bottom and Au as the top electrode. Epitaxial heterostructures of YBa2Cu3O \(_{7 - \delta }\) and BaTiO3 were prepared by dc and rf sputtering, respectively. The crystal structure of the films was characterised by X-ray diffraction. The ferroelectric behaviour of the BaTiO3 films was confirmed by hysteresis loop measurements using a Sawyer Tower circuit. We obtain a coercive field of 30 kV/cm and a remanent polarisation of 1.25 μC/cm2. At sub-switching fields the capacitance of the films obeys a relation analogous to the Rayleigh law. This behaviour indica…
Evidence of Band Bending Induced by Hole Trapping at MAPbI3 Perovskite / Metal Interface
2016
International audience; Electron injection by tunneling from a gold electrode and hole transport properties in polycrystalline MAPbI3 has been investigated using variable temperature experiments and numerical simulations. The presence of a large and unexpected band bending at the Au/MAPbI3 interface is revealed and attributed to the trapping of holes, which enhances the injection of electrons via tunneling. These results elucidate the role of volume and interface defects in state-of-the-art hybrid perovskite semiconductors.
Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film
2004
The influence of carrier concentration in silicon-on-insulator film on the thermal characteristics of semiconductor and performance of the superconductor-semiconductor-superconductor micro-coolers have been investigated at sub kelvin temperatures. The overheating of the lattice in heavily doped silicon film must be taken into account in the analysis of electron-phonon coupling experiment and operation of the cooler device. The heat flow between electrons and phonons in heavily doped silicon films is found to be proportional to T6, which is in accordance with theoretical prediction for dirty limit. Increasing the doping level in the semiconductor considerably increases both the efficiency of…
Surface resonance of thin films of the Heusler half-metal Co2MnSi probed by soft x-ray angular resolved photoemission spectroscopy
2019
Heusler compounds are promising materials for spintronics with adjustable electronic properties including 100% spin polarization at the Fermi energy. We investigate the electronic states of ${\mathrm{AlO}}_{x}$ capped epitaxial thin films of the ferromagnetic half-metal ${\mathrm{Co}}_{2}\mathrm{MnSi}$ ex situ by soft x-ray angular resolved photoemission spectroscopy (SX-ARPES). Good agreement between the experimental SX-ARPES results and photoemission calculations including surface effects was obtained. In particular, we observed in line with our calculations a large photoemission intensity at the center of the Brillouin zone, which does not originate from bulk states, but from a surface r…
Phonon dispersion in GaN/AlN non‐polar quantum wells: confinement and anisotropy
2007
We have calculated the phonon dispersion relations in a non-polar GaN/AlN quantum well within the dielectric continuum model and making use of Loudon's model of uniaxial crystals. Due to the strong in-plane anisotropy of this orientation, we have found that in general ordinary and extraordinary phonons are not decoupled. In this work we analyze the conditions for the occurrence of interface modes. In these novel heterostructures there is an added dependence of the phonon dispersion on the orientation of the in-plane phonon wavevector, which allows the existence of interface phonons at energies forbidden in the better known polar structures. Under particular circumstances the vibrations exci…
Influence of thickness and interface on the low-temperature enhancement of the spin Seebeck effect in YIG films
2016
The temperature-dependent longitudinal spin Seebeck effect (LSSE) in heavy metal (HM)/Y_{3}Fe_{5}O_{12} (YIG) hybrid structures is investigated as a function of YIG film thickness, magnetic field strength, and different HM detection materials. The LSSE signal shows a large enhancement with reductions in temperature, leading to a pronounced peak at low temperatures. We find that the LSSE peak temperature strongly depends on the film thickness as well as on the magnetic field. Our result can be well explained in the framework of magnon-driven LSSE by taking into account the temperature-dependent effective propagation length of thermally excited magnons in the bulk of the material. We further …
Photorefractive detection of antiparallel ferroelectric domains in BaTiO 3 and BaTiO 3 :Co crystals
1998
An all-optical method involving one coherent beam of light and based on photorefractive wave mixing is used to reveal antiparallel ferroelectric domains in one pure, and two cobalt-doped, barium titanate crystals (BaTiO 3 ). Rod-shaped domains with square cross sections are revealed.