Search results for "Schottky barrier"
showing 10 items of 41 documents
Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes
2016
Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization
2017
One of the main challenges to exploit molybdenum disulfide (MoS2) potentialities for the next-generation complementary metal oxide semiconductor (CMOS) technology is the realization of p-type or ambipolar field-effect transistors (FETs). Hole transport in MoS2 FETs is typically hampered by the high Schottky barrier height (SBH) for holes at source/drain contacts, due to the Fermi level pinning close to the conduction band. In this work, we show that the SBH of multilayer MoS2 surface can be tailored at nanoscale using soft O-2 plasma treatments. The morphological, chemical, and electrical modifications of MoS2 surface under different plasma conditions were investigated by several microscopi…
Amorphous semiconductor—electrolyte junction. Impedance study on the a-Nb2 O5—electrolyte junction
1990
Abstract A systematic study of the impedance behaviour of the anodic niobium oxide film/aqueous electrolyte interface was carried out using the lock-in technique at different signal frequencies. The dependence of both components of the impedance on the electrode potential and on frequency is analysed by taking into account the amorphous nature of the films. The lack of long-range order in these oxide layers modifies the physical picture in respect to the case of single crystal semiconductors. A new equivalent circuit has been assumed, based on recent theory of an amorphous semiconductor Schottky barrier. Such a new approach allows the characterization of the interface and the determination …
Integrated SINIS refrigerators for efficient cooling of cryogenic detectors
2002
In this paper we report recent results obtained with large area superconductor-insulator-normal metal-insulator-superconductor tunnel junction coolers. With the devices we have successfully demonstrated electronic cooling from 260 mK to 80 mK with a cooling power of 20 pW at 80 mK. At present, we are focusing on obtaining similar performance in cooling cryogenic detectors. Additionally, we present recent results of successful operation of a metalsemiconductor structure with a Schottky barrier acting as the tunnel barrier and the possibility to use this kind of structures for on-chip cooling.
Revisiting the electronic properties of Molecular Semiconductor – Doped Insulator (MSDI) heterojunctions through impedance and chemosensing studies
2015
Abstract The core activity of this work was to give a new interpretation of the electronic behavior of Molecular Semiconductor – Doped Insulator heterojunctions (MSDI), a new organic device combining two molecular materials with very different electronic properties. We focused on understanding the phenomenon occurring at the interface of fluorinated and non-fluorinated phthalocyanines that appears to be a determining factor for the electronic charge transport in the two-component thin film and ultimately deciding the nature of gas sensing, as illustrated with ozone and ammonia chosen as examples of accepting and donating gases. The impedance measurements showed that the Schottky contact bet…
Schottky barrier height tuning by Hybrid organic-inorganic multilayers
2014
ABSTRACTSemiconducting and insulating polymers and copolymers/Au nanograins based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate by an iterative method that involves, respectively, Langmuir-Blodgett and spin-coating techniques (for the deposition of organic film) and sputtering technique (for the deposition of metal nanograins) to prepare Au/HyMLs/p-Si Schottky device. The electrical properties of the Au/HyMLs/p-Si Schottky device were investigated by current-voltage (I–V) measurements in the thickness range of 1-5 bilayers (BL).At different number of layers, current-voltage (I–V) measurements were performed. Results showed a rectifying behavior. Junction parame…
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures
2017
Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) an…
Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence
2017
Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence. peerReviewed
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
2017
International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
The photoelectrochemistry of thin passive layers. Investigation of anodic oxide films on titanium metal
1993
Abstract A photoelectrochemical investigation has been performed on thin TiO2 films grown anodically in 0.5 M H2SO4 solution at high growth rates. The shape of the photocurrent vs. potential curves under monochromatic irradiation (photocharacteristics) depends on the photon energy of the incident light at energies above the optical band gap of the films (3.25 ± 0.05 eV). This finding has been explained by considering the presence of geminate recombination of the photogenerated electron-hole pairs. In order to fit the experimental photocharacteristics, an expression for the photocurrent is proposed which takes into account the low drift range of photocarriers and possible recombination in th…