Search results for "Semiconductor device"
showing 10 items of 60 documents
SIC based solid state protections switches for space applications
2017
Development and technology maturation of Silicon Carbide (SiC) power transistors over the last 15 years has motivated its study in aerospace systems. When compared with Si devices, superior voltage blocking capacity and the capability of operation at higher temperatures, give important advantages in space power electronics applications, similar to what happens in terrestrial electronics. This paper discusses the use of SiC power transistors for Solid State Power Switches especially addressed to the space segment. Two applications will be covered, the first is the Solid State Shunt Switch, widely used in high power Direct Energy Transfer (DET) photovoltaic power regulators and the second is …
A summary of expressions for central performance parameters of high efficiency solar cell concepts
2019
This work reviews expressions for central performance parameters of various types of PV-concepts when operating at the radiative limit. Some new expressions not published elsewhere are also included. The performance parameters include the short circuit current density, the open circuit voltage, the maximum power density and the optimal voltage. The cell concepts include single junction cells, cells optically coupled to up- and down-converters, intermediate band solar cells and a couple of implementations of multijunction devices. The Lambert W function is used to express the maximum power density.
Modelling chemical composition in electric systems - implications to the dynamics of dye-sensitised solar cells
2010
International audience; Classical electromagnetism provides limited means to model electric generators. To extend the classical theory in this respect, additional information on microscopic processes is required. In semiconductor devices and electrochemical generators such information may be obtained by modelling chemical composition. Here we use this approach for the modelling of dye-sensitised solar cells. We simulate the steady-state current-voltage characteristics of such a cell, as well as its transient response. Dynamic simulations show optoelectronic hysteresis in these cells under transient light pulse illumination.
Numerical Simulation of Thermal Effects in Coupled Optoelectronic Device-circuit Systems
2008
The control of thermal effects becomes more and more important in modern semiconductor circuits like in the simplified CMOS transceiver representation described by U. Feldmann in the above article Numerical simulation of multiscale models for radio frequency circuits in the time domain. The standard approach for modeling integrated circuits is to replace the semiconductor devices by equivalent circuits consisting of basic elements and resulting in so-called compact models. Parasitic thermal effects, however, require a very large number of basic elements and a careful adjustment of the resulting large number of parameters in order to achieve the needed accuracy.
Drift Modeling of Electrically Controlled Nanoscale Metal–Oxide Gas Sensors
2008
Gas sensors with small dimensions offer the advantage of electrical sensitivity modulation. However, their actual use is hindered by drift effects that exceed those of usual metal-oxide sensors. We analyzed possible causes and found the best agreement of experimental data with the model of internal dopant fluctuations. The dopants are oxygen vacancies exhibiting high drift-diffusion coefficients under the impact of electrical fields. Thus, the width parameters of space charge regions, which again control the sensor current, are undergoing slow changes. Moreover, the dopant distributions cause internal electrical fields that yield drift even after voltage switch-off. This behavior has been p…
Numerical Simulation of Thermal Effects in Electric Circuits via Energy Transport equations
2006
In this work we present the coupling of stationary energy-transport (ET) equations with Modified Nodal Analysis (MNA)-equations to model electric circuits containing semiconductor devices. The one-dimensional ET-equations are discretised in space by an exponential fitting mixed hybrid finite element approach to ensure current continuity and positivity of charge carriers. The discretised ET-equations are coupled to MNA-equations and the resulting system is solved with backwarddifference formulas. Numerical examples are shown for a test circuit containing a pn-diode, and the results are compared to those achieved using the drift-diffusion model to describe the semiconductor devices in the cir…
Optimal pareto solutions of a dynamic C chart: An application of statistical process control on a semiconductor devices manufacturing process
2015
The present paper proposes a novel economic-statistical design procedure of a dynamic c control chart for the Statistical Process Control (SPC) of the manufacturing process of semiconductor devices. Particularly, a non-linear constrained mathematical programming model is formulated and solved by means of the ε-constraint method. A numerical application is developed in order to describe the Pareto frontier, that is the set of optimal c charts and the related practical considerations are given. The obtained results highlight how the performance of the developed dynamic c chart overcome that of the related static one, thus demonstrating the effectiveness of the proposed procedure.
Monte Carlo simulation of high‐order harmonics generation in bulk semiconductors and submicron structures
2004
To qualify the feasibility of standard semiconductor materials and Schottky‐barrier diodes (SBDs) for THz high‐order harmonic generation and extraction, the harmonic intensity, intrinsic noise and signal‐to‐noise ratio are calculated by the Monte Carlo method when a periodic high‐frequency large‐amplitude external signal is applied to a semiconductor device. Due to very high signal‐to‐noise ratio heavily doped GaAs SBDs are found to exhibit conditions for frequency mixing and harmonic extraction that are definitively superior to those of bulk materials. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION
1992
An efficient numerical method for the solution of hot‐carrier transport equations describing transient processes in submicrometer semiconductor devices is proposed. The calculations of transient processes in submicrometer MOS transistor were carried out and compared with the results obtained by conventional drift‐diffusion model.
Electric conduction in solids: a pedagogical approach supported by laboratory measurements and computer modelling environments
2008
In this paper we present a pedagogic approach aimed at modeling electric conduction in semiconductors, built by using NetLogo, a programmable modeling environment for building and exploring multi‐agent systems. ‘Virtual experiments’ are implemented to confront predictions of different microscopic models with real measurements of electric properties of matter, such as resistivity. The relations between these electric properties and other physical variables, like temperature, are, then, analyzed.